Defect Engineering in SiC and Application to Robust Devices with Ultrahigh Blocking Voltage

SiC 缺陷工程及其在具有超高阻断电压的鲁棒器件中的应用

• 批准号: 21226008
• 负责人: KIMOTO Tsunenobu
• 金额: $ 130.21万
• 依托单位: Kyoto University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (S)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009-05-11 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21226008/
• 关键词: 半導体; パワーデバイス; 結晶欠陥; キャリア寿命; 絶縁破壊; 炭化珪素; 深い準位; 拡張欠陥; 点欠陥; PiNダイオード; 接合終端

Defect electronics in SiC and ultrahigh-voltage SiC power devices have been studied toward efficient electric power conversion employed for future smart grids. Fast epitaxy of high-purity SiC was developed, and extended defects in SiC epitaxial layers were systematically characterized. Physical properties of the major deep levels were elucidated. The carrier-lifetime killer defects could be eliminated, leading to remarkably enhanced carrier lifetimes. Control of carrier lifetimes was also achieved. Original junction-termination structures were proposed to achieve ultrahigh blocking voltage with SiC, and breakdown mechanism of SiC devices was discussed. By utilizing thick, lightly-doped SiC epitaxial layers and the original device structures, ultrahigh-voltage (> 20 kV) PiN diodes and npn bipolar transistors were realized. The performance was significantly improved by enhancement of carrier lifetimes, and high-temperature operation of SiC devices was demonstrated.

SiC和超高压SiC功率器件中的缺陷电子技术已被研究用于未来智能电网的高效电力转换。研究了高纯度碳化硅的快速外延技术，系统地表征了碳化硅外延层的扩展缺陷。阐明了主要深层的物理性质。可以消除载波寿命杀手缺陷，从而显著提高载波寿命。还实现了载体寿命的控制。提出了用SiC实现超高阻断电压的原始结端结构，并讨论了SiC器件的击穿机理。利用厚的、轻掺杂的SiC外延层和原始器件结构，实现了超高压（> ~ 20kv） PiN二极管和npn双极晶体管。通过提高载流子寿命，显著提高了性能，并证明了SiC器件的高温工作。

项目成果

Nonradiative recombination at threading dislocations in 4H-SiC epilayers studied by micro-photoluminescence mapping

• DOI: 10.1063/1.3622336
• 发表时间: 2011-08-01
• 期刊: JOURNAL OF APPLIED PHYSICS
• 影响因子: 3.2
• 作者: Feng, Gan;Suda, Jun;Kimoto, Tsunenobu
• 通讯作者: Kimoto, Tsunenobu

半導体素子及び半導体素子の製造

半导体器件及半导体装置的制造

• 发表时间: 2011

High-voltage SiC power devices for energy electronics

能源电子用高压碳化硅功率器件

• 发表时间: 2011
• 作者: T.Kimoto;J.Suda
• 通讯作者: J.Suda

ワイドギャップ半導体 あけぼのから最前線へ

宽禁带半导体：从曙到最前沿

• 发表时间: 2013
• 作者: T.Suski;G.Staszczak;R.Czernecki;G.Targowski;A.Khachapuridze;P.Perlin;M.Funato;Y.Kawakami;木本恒暢
• 通讯作者: 木本恒暢

Detection and depth analyses of deep levels generated by ion implantation in n- and p-type 4H-SiC

• DOI: 10.1063/1.3159901
• 发表时间: 2009-07-01
• 期刊: JOURNAL OF APPLIED PHYSICS
• 影响因子: 3.2
• 作者: Kawahara, Koutarou;Alfieri, Giovanni;Kimoto, Tsunenobu
• 通讯作者: Kimoto, Tsunenobu