High-Voltage, High-Efficiency, High-Speed Power MOSFET Using Wide Bandgap Semiconductor SiC

使用宽禁带半导体 SiC 的高压、高效、高速功率 MOSFET

• 批准号: 13555094
• 负责人: KIMOTO Tsunenobu
• 金额: $ 6.59万
• 依托单位: KYOTO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13555094/
• 关键词: Silicon Carbide; Power Device; MOSFET; Oxide; Semiconductor Interface; Channel Mobility

Control of MOS interface, device processing, and fabrication of high-voltage MOSFETs have been investigated by using a wide bandgap semiconductor silicon carbide (SiC), which shows high breakdown field and other excellent physical properties. In control of MOS interface, thermal oxidation at high temperature resulted in the improvement of the MOS quality, and high channel mobilities of 78 cm^2/Vs and 22 cm^2/Vs were obtained for 6H-SiC(OOOl) and 4H-SiC(OOOl) MOSFETs, respectively. 4H-SiC(ll20) and (0338) MOSFETs exhibited a high channel mobility of 30-40 cm^2/Vs. In device processing, thick SiO_2 films deposited by plasma CVD could successfully used as an implantation mask. Short-channel MOSFETs with a channel length of 1 μm could be processed. The electrical activation of implanted dopants was significantly improved by increasing annealing temperature after implantation. The structure of lateral SiC MOSFETs with RESURF (Reduced Surface Field) structure was designed by using a 2D device simulation. The RESURF dose, depth, and the drift layer structure were optimized. SiC lateral RESURF MOSFETs were fabricated on 4H-SiC and 6H-SiC which were grown in our group. The MOSFET showed a very high breakdown voltage of 1 kV and a low on-resistance of 0.1 Ωcm^2. This characteristics outperforms the "Si limit" which is theoretically determined from the material properties, demonstrating the much potential of SiC power devices.

利用宽带隙半导体碳化硅（SiC）研究了 MOS 界面控制、器件加工和高压 MOSFET 的制造，该材料具有高击穿电场和其他优异的物理特性。在MOS界面控制方面，高温热氧化提高了MOS质量，6H-SiC(OOOl)和4H-SiC(OOOl) MOSFET分别获得了78 cm^2/Vs和22 cm^2/Vs的高沟道迁移率。 4H-SiC(ll20) 和 (0338) MOSFET 表现出 30-40 cm^2/Vs 的高沟道迁移率。在器件加工中，等离子体CVD沉积的厚SiO_2薄膜可以成功地用作注入掩模。可加工沟道长度为1μm的短沟道MOSFET。通过提高注入后的退火温度，显着改善了注入掺杂剂的电激活。采用二维器件模拟设计了具有 RESURF（减小表面场）结构的横向 SiC MOSFET 的结构。对 RESURF 剂量、深度和漂移层结构进行了优化。 SiC 横向 RESURF MOSFET 是在我们团队生长的 4H-SiC 和 6H-SiC 上制造的。该 MOSFET 具有 1 kV 的极高击穿电压和 0.1 Ωcm^2 的低导通电阻。这一特性超越了从材料特性理论上确定的“Si极限”，展示了SiC功率器件的巨大潜力。

项目成果

T. Kimoto: "Avalanche phenomena in 4H-SiC pn diodes fabricated by Al and B implantation"IEEE Transaction Electron Devices. Vol.49. 1505-1510 (2002)

T. Kimoto：“通过 Al 和 B 注入制造的 4H-SiC pn 二极管中的雪崩现象”IEEE Transaction Electron Devices。

T.Kimoto: "Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode"IEEE Transactions on Electron Devices. 49. 150-154 (2002)

T.Kimoto：“低损耗、高电压 6H-SiC 外延 p-i-n 二极管”IEEE Transactions on Electron Devices。

T. Kimoto: "High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes"Journal of Applied Physics. Vol.91. 4242-4248 (2002)

T. Kimoto：“高能 (MeV) Al 和 B 离子注入 4H-SiC 和 pin 二极管的制造”应用物理学杂志。

T.Kimoto: "Chemical vapor deposition and deep level analyses of 4H-SiC(112^^-0)"Journal of Applied Physics. 89. 6105-6109 (2001)

T.Kimoto：“4H-SiC(112^^-0)的化学气相沉积和深层次分析”应用物理学杂志。

T.Kimoto: "High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes"Journal of Applied Physics. 91. 4242-4248 (2002)

T.Kimoto：“高能 (MeV) Al 和 B 离子注入 4H-SiC 和 pin 二极管的制造”应用物理学杂志。