Development of deep ultraviolet LED and LD on nitride semiconductor

我展示了通过低压金属有机化学气相沉积（LP-MOCVD）生长的高效270nm波段AlGaN深紫外（DUV） led。为了获得高质量的AlN，采用a轴取向的c面蓝宝石衬底，在AlGaN量子阱发射区引入Si的光掺杂，采用多量子势垒层，优化带阵等方法实现了高效duv - led。结果，我发现生长容易良好的AlN表面。duv - led的最大光输出功率为33mW，最大外量子效率为4%左右。

I demonstrated high-efficiency 270nm band AlGaN based deep-ultraviolet(DUV) LEDs grown by low-pressure metal-organic chemical-vapor deposition(LP-MOCVD). The high efficiency DUV-LEDs were achieved by using a-axis oriented c-plane sapphire substrates in order to obtain a high quality AlN, introducing the light-doping of Si to AlGaN quantum well emitting region, using the multi quantum barriers layer, optimizing the band lineup and so on. As a result, I made found growing the easily good AlN surface. Additionally, the maximum light output power and maximum external quantum efficiency of DUV-LEDs were 33mW and about 4%, respectively.