STUDIES ON STEP BEHAVIOR ON Si(110)SURFACE AND ITS APPLICATION TO SELF-ORGANIZED FORMATION OF GRAPHENE NANO-RIBBON

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We have studied in detail the impacts of surface microstructures of substrates on the quality and the electronic structure of the epitaxial graphene (EG)formed on them. As a result, we established a method to control the surface steps on Si and SiC substrates, and succeeded in the betterment of EG quality and in controlling the Si-and C-termination of 3C-SiC(111)surfaces. Moreover, it was found that EGs on Si-terminated and C-terminated SiC(111)surfaces show semiconducting and metallic properties, respectively. This finding surely provides a novel method to control the graphene electronic properties, which can be applied to fabrication of graphene devices.