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SURFACE CHEMISTRY DURING SiC EPITAXIAL GROWTH USING ORGANO-SILANES

使用有机硅烷进行 SiC 外延生长期间的表面化学

基本信息

批准号：
12650025
负责人：
SUEMITSU Maki
金额：
$ 2.62万
依托单位：
TOHOKU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2001
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12650025/
关键词：
SILICON CARBIDE SiC GAS-SOURCE MBE HETEROEPITAXY MONOMETHYLSILANE ORGANO-SILANES SURFACE CHEMISTRY IN-SITU OBSERVATION

项目摘要

SiC is a promising material for the next-generation power devices. This research, aiming at clarifying the surface chemistry during SiC epitaxy using organo-silanes as well as developing a low-temperature, high-quality SiC epitaxy, has yielded the following results.(1) Suppression of Si out-diffusion by using Organo-Silane method: By using an organo-silane as the source gas, which contains a chemically stable Si-C bond within the molecule, the out-diffusion of the Si atoms from the substrate was found to be greatly suppressed.(2) Development of OS-buffer method: In SiC/Si heteroepitaxy, a buffer interlayer is a must to moderate the 20% lattice mismatch between the SiC film and the Si substrate. Formerly, the buffer layer was formed with the carbonization method. The high temperature (〜900℃) required in the process, however, caused harmful surface roughness and voids in the Si substrates. In this study, a new method, named OS-buffer method, has been developed, in which organo-silane gas … More es are used to form the buffer layer in place of hydrocarbon gases. As a result, qualified bufferlayers can be grown at 600℃.(3) Development of OS-GSMBE method: Instead of using a pair of Si- and C-source gases as in the conventional SiC epitaxy, a single source of organo-silane gas was successfully used to grow qualified SiC epitaxial films. As a result, the growth temperature could be reduced from the former 1100℃ to 900℃. Surface hydrogen was also found to be harmful in obtaining qualified films.(4) Obtaining a single-domain SiC film on Si: The resistive heating method was found to be effective in obtaining a single-domain SiC film on Si substrates(5) Modeling of the Si growth: By obtaining the growth rate and the hydrogen coverage at the growing surface as a function of both the substrate temperature and the disilane pressure, the growth kinetics for the Si GSMBE has been clarified. Based on the result, a new growth model has been developed, which accounts for both the temperature- and the pressure-dependence of the growth rate unifiedly. Less

SiC是下一代功率器件的理想材料。本研究的目的是澄清使用有机硅烷的SiC外延过程中的表面化学，以及开发低温，高质量的SiC外延，取得了以下结果。(1)通过使用有机硅烷方法抑制Si的外扩散：通过使用有机硅烷作为源气体，其在分子内包含化学稳定的Si-C键，发现Si原子从衬底的外扩散被大大抑制。(2)OS缓冲方法的发展：在SiC/Si异质外延中，缓冲中间层是必须的，以缓和SiC薄膜和Si衬底之间20%的晶格失配。以前，用碳化方法形成缓冲层。然而，在该过程中所需的高温（约900℃），造成有害的表面粗糙度和硅衬底中的空隙。本研究提出了一种新的有机硅烷缓冲法， ...更多信息 ES用于代替烃气体形成缓冲层。结果表明，在600℃下可以生长出合格的缓冲层. (3)OS-GSMBE方法的发展：取代传统SiC外延中使用一对Si和C源气体，使用单一的有机硅烷气体源成功地生长出合格的SiC外延膜。结果表明，生长温度可由原来的1100℃降低到900℃。表面氢也被发现是有害的，在获得合格的薄膜。(4)在Si上获得单畴SiC薄膜：发现电阻加热方法在Si衬底上获得单畴SiC薄膜是有效的。（5）Si生长的建模：通过获得生长速率和生长表面的氢覆盖率作为衬底温度和乙硅烷压力的函数，已经澄清了Si GSMBE的生长动力学。在此基础上，建立了一个新的生长模型，该模型统一考虑了生长速率的温度和压力依赖性。少