Fabrication and electrical characterization of GOI structures by rapid melt growth

绝缘体结构上的锗有望成为未来电子设备的起始材料。因此，需要新的GOI结构制备工艺来获得高质量的单晶Ge层。在这项研究中，我们提出了新的方法，并检验了该工艺的优势。用该工艺制作的基于GOI结构的晶体管表现出了优异的电学性能，表明了该方法的优点和在未来电子器件中的可用性。

Germanium on insulator structures have been expected as starting materials for future electric devices. Therefore, new fabrication process of GOI structure is required to obtain high-quality single-crystalline Ge layers. In this study we have proposed novel method and examined the advantages of the process. The transistors based on the GOI structures fabricated by this process showed excellent electrical properties, indicting the benefit of this method and the availability for future electric devices.