Simulation Study of Long-Range Coulomb Interaction in Nano-Scale Devices

纳米器件中长程库仑相互作用的模拟研究

• 批准号: 21360160
• 负责人: SANO Nobuyuki
• 金额: $ 11.23万
• 依托单位: University of Tsukuba
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21360160/
• 关键词: 電子デバイス; 集積回路; 半導体デバイス; デバイス・シミュレーション; ボルツマン輸送方程式; モンテカルロ法; クーロン相互作用; 電子輸送; 計算物理; 半導体物性

We investigate the effect of the Coulomb interaction on device characteristics and its physical mechanism under the double-gate MOSFET structures by Monte Carlo simulations which take into account of the Coulomb interaction accurately. Potential fluctuations associated with the long-range part of the Coulomb interaction among electrons are also studied by looking at the local density of states in high-doped regions. We find that there are strong electron flows even inside the high-doped source regions near the channel junctions so that electrons there are in highly off-equilibrium. We also find that device characteristics strongly degrade if the channel length shrinks below 10 nm due to plasmon excitations by channel electrons through the Coulomb interaction.

本文采用Monte Carlo模拟方法研究了双栅MOSFET结构下库仑相互作用对器件特性的影响及其物理机制。与电子之间的库仑相互作用的长程部分相关的潜在波动也研究了通过看在高掺杂区域的局部态密度。我们发现，即使在沟道结附近的高掺杂源极区内部，也有很强的电子流动，使电子处于高度非平衡状态。我们还发现，如果沟道长度收缩到10 nm以下，由于通过库仑相互作用的沟道电子的等离子体激元激发，器件特性强烈退化。

项目成果

Analysis of Photon-Induced Drain Current in Polycrystalline-Silicon Thin-Film Transistors

多晶硅薄膜晶体管中光子感应漏电流的分析

• DOI: 10.1143/jjap.48.101201
• 发表时间: 2009
• 期刊: Jpn. J. Appl. Phys
• 作者: 小松辰実;須田良幸;H. Ikeda and N. Sano
• 通讯作者: H. Ikeda and N. Sano

Pinch-off Voltage Lowering in Polycrystalline-Silicon Thin-Film Transistors

多晶硅薄膜晶体管的夹断电压降低

• DOI: 10.1143/jjap.50.014301
• 发表时间: 2010
• 期刊: Jpn. J. Appl. Phys
• 作者: Yuichiro Yamaguchi;Masatsugu Shouji;and Yoshiyuki Suda;宮本明;Yasuhiko Ishikawa and Kazumi Wada;H. Ikeda and N. Sano
• 通讯作者: H. Ikeda and N. Sano

Model-Comparison Study of Quasi-Ballistic Electron Transport in Nanoscale Semiconductor Devices

纳米半导体器件中准弹道电子输运的模型比较研究

• 发表时间: 2010
• 作者: T-w. Tang;I. Yoon;N. Sano;S. Jin;M. Fischetti;and Y. J. Park
• 通讯作者: and Y. J. Park

The Role of High-Doped Source and Drain on Device Performance in Nano-Scale Si-MOSFETs

高掺杂源极和漏极对纳米级 Si-MOSFET 器件性能的作用

• 发表时间: 2011
• 作者: Ryota Suzuki;Kohei Yoshimoto;Laurent Decosterd;Yasuhiko Ishikawa;Kazumi Wada;(INVITED) N. Sano
• 通讯作者: (INVITED) N. Sano

Self-Consistent Drift-Diffusion Approach for Analysis of Intermediate Band Solar Cells with Multi-Stacked Quantum Dots

用于分析多层堆叠量子点中能带太阳能电池的自洽漂移扩散方法

• 发表时间: 2010
• 作者: K. Yoshida;Y. Okada;and N. Sano
• 通讯作者: and N. Sano