Simulation Study of Long-Range Coulomb Interaction in Nano-Scale Devices

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We investigate the effect of the Coulomb interaction on device characteristics and its physical mechanism under the double-gate MOSFET structures by Monte Carlo simulations which take into account of the Coulomb interaction accurately. Potential fluctuations associated with the long-range part of the Coulomb interaction among electrons are also studied by looking at the local density of states in high-doped regions. We find that there are strong electron flows even inside the high-doped source regions near the channel junctions so that electrons there are in highly off-equilibrium. We also find that device characteristics strongly degrade if the channel length shrinks below 10 nm due to plasmon excitations by channel electrons through the Coulomb interaction.