Study on Device Lifetime Uncertainty asscociated with Substrate Current Fluctuation in Ultrasmall Semiconductor Devices

超小型半导体器件中与衬底电流波动相关的器件寿命不确定性研究

• 批准号: 10555115
• 负责人: SANO Nobuyuki
• 金额: $ 3.58万
• 依托单位: University of Tsukuba
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B).
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-10555115/
• 关键词: impact ionization; MOSFET; Monte Carlo method; simulation; semiconductor device; device lifetime; hot carrier; current noise; 弾道輸送

We have investigated the device lifetime uncertainty of deep submicron and sub-0.1 micron MOSFET devices from the viewpoint of current fluctuations. More specifically, the substrate current fluctuations associated with anisotropy of impact ionization processes, current noise, and statistical current fluctuations have been investigated along with the device degradation and its reliability. The results we have obtained will be summarized as follows.1. The full-band Monte Carlo simulations have been carried out in Si-MOSFETs to study the anisotropic impact ionization processes and it has been found that the substrate current fluctuates very strongly as the applied drain voltage is reduced. This implies that the reliability of device lifetime based on the substrate current could fluctuate with great uncertainty.2. Current noise under various device structures has been studied via Monte Carlo method. It has been found that the relative strength of current noise could exceed several tens % because of the decrease of the number of conduction electrons.3. Statistical current fluctuation associated with discrete random dopants in Si-MOSFETs has been investigated by the 3-D Drift-Diffusion simulations. It has been pointed out that the 'atomistic' dopant model widely used at present is inconsistent with the concept presumed in the simulation scheme.4. We have developed a new dopant model which overcomes the above-mentioned problems. Its validity has been demonstrated by simulating various device structures.

从电流涨落的角度研究了深亚微米和亚0.1微米MOSFET器件寿命的不确定性。更具体地说，衬底电流波动与各向异性的碰撞电离过程，电流噪声，和统计电流波动已被调查沿着与器件的退化和其可靠性。我们所得到的结果将总结如下.用MonteCarlo方法研究了Si-MOSFET的各向异性碰撞电离过程，发现衬底电流随漏极电压的降低而发生剧烈的波动。这意味着基于衬底电流的器件寿命的可靠性可能会有很大的不确定性.用蒙特卡罗方法研究了不同器件结构下的电流噪声。研究发现，由于导电电子数量的减少，电流噪声的相对强度可能超过百分之几十。3.用三维漂移扩散模拟方法研究了Si-MOSFET中离散随机掺杂引起的电流统计涨落。指出目前广泛使用的“原子"掺杂模型与模拟方案中假定的概念不一致.我们已经开发了一种新的掺杂剂模型，克服了上述问题。通过对各种器件结构的仿真，验证了该方法的有效性。

项目成果

Nobuyuki Sano et al.: "Role of Long-Range and Short-Range Coulomb Potentials in Threshold Characteristics under Discrete Dopants in Sub-0.1 um Si-MOSFETs"International Electron Devices Meeting Technical Digest. 275-278 (2000)

Nobuyuki Sano 等人：“0.1 微米以下 Si-MOSFET 中离散掺杂剂下的长程和短程库仑电势对阈值特性的作用”国际电子器件会议技术文摘。

Nobuyuki Sano: "(招待講演)Device Physics and TCAD : Simulation Issues for Sub-100 nm Devices"Proc.SEMICON Korea Tech.Symposium. 473-485 (2001)

Nobuyuki Sano：“（特邀演讲）器件物理和 TCAD：亚 100 nm 器件的仿真问题”Proc.SEMICON 韩国技术研讨会 473-485 (2001)。

Nobuyuki Sano et al.: "Influence of Electronic Thermal Noise on Drain Current in Very Small Si-MOSFETs"Jpn.J.Appl.Phys.. Vol.4. 1974-1978 (2000)

Nobuyuki Sano 等人：“电子热噪声对超小型 Si-MOSFET 漏极电流的影响”Jpn.J.Appl.Phys.Vol.4。

Nobuyuki Sano et al.: "Influence of Intrinsic Current Fluctuation in Very Small Si-MOSFETs"Proc.International Conference on Solid State Devices and Materials (SSDM-99). 22-23 (1999)

Nobuyuki Sano 等人：“Influence of Intrinsic Current Fluctuation in Very Small Si-MOSFETs”Proc.International Conference on Solid State Devices and Materials (SSDM-99)。

Nobuyuki Sano et al.: "Influence of Thermal Noise on Drain Current in Very Small Si-MOSFET's"Japanese Journal of Applied Physics. April. (2000)

Nobuyuki Sano 等人：“热噪声对超小型 Si-MOSFET 漏极电流的影响”日本应用物理学杂志。