Effects of the Coulomb Interaction and Realistic Device Analyses in 3D Nanoscale Semiconductor Devices
Effects of the Coulomb Interaction and Realistic Device Analyses in 3D Nanoscale Semiconductor Devices
批准号:
24360130
负责人:
SANO Nobuyuki
金额:
$11.73万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2012
资助国家:
日本
项目状态:
已结题
起止时间:
2012-04-01 至 2015-03-31
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3D structural dependence of carrier transport for intermediate band solar cells
中能带太阳能电池载流子传输的 3D 结构依赖性
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
[K. Yoshida, Y. Okada, and N. Sano]
通讯作者:
and N. Sano
Effect of Impurity Scattering on Mobility in Si Nanowire Junctionless FETs
杂质散射对硅纳米线无结 FET 迁移率的影响
DOI:
--
发表时间:
2014
期刊:
影响因子:
--
作者:
[A. Ueda, M. Luisier, and N. Sano]
通讯作者:
and N. Sano
ナノデバイスのシミュレーョン:なぜ、モンテカルロ法か?
纳米器件模拟:为什么采用蒙特卡罗方法?
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
[Y. Takahashi, H . Takenaka, T. Uchida, M. Arita, A. Fujiwara, and H. Inokaw, 佐野 伸行]
通讯作者:
佐野 伸行
DOI:
10.1109/radecs.2011.6131413
发表时间:
2012
期刊:
IEEE Transactions on Nuclear Science
影响因子:
1.8
作者:
[Shin-ichiro Abe;Y. Watanabe;Nozomi Shibano;N. Sano;Hiroshi Furuta;Masafumi Tsutsui;T. Uemura;T. Arakawa]
通讯作者:
Shin-ichiro Abe;Y. Watanabe;Nozomi Shibano;N. Sano;Hiroshi Furuta;Masafumi Tsutsui;T. Uemura;T. Arakawa
Screening Effect on Si Junctionless Nanowire Transistors
硅无结纳米线晶体管的屏蔽效应
DOI:
--
发表时间:
2014
期刊:
影响因子:
--
作者:
[A. Ueda, M. Luisier, K. Yoshida, S. Honda, and N. Sano]
通讯作者:
and N. Sano
共 18 条
Coulomb Interaction in Atomic-Layer FET Devices and Realistic Prediction of Device Characteristics
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批准号:15H03983
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$10.48万
-
财政年份:2015
-
负责人:SANO Nobuyuki
-
依托单位:
Simulation Study of Long-Range Coulomb Interaction in Nano-Scale Devices
-
批准号:21360160
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$11.23万
-
财政年份:2009
-
负责人:SANO Nobuyuki
-
依托单位:
Microscopic Fluctuations and Transport Mechanism of Few Electron Systems
-
批准号:18063004
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$29.82万
-
财政年份:2006
-
负责人:SANO Nobuyuki
-
依托单位:
Study of High-Density Electron Transport by Three-Dimensional Particle-Based Simulations under Nano-Scale Devices
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批准号:18360160
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$9.99万
-
财政年份:2006
-
负责人:SANO Nobuyuki
-
依托单位:
Device Modeling of Discrete Impurities for the Analyses of Threshold Voltage Fluctuations in Ultrasmall Semiconductor Devices
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批准号:14550315
-
项目类别:Grant-in-Aid for Scientific Research (C)
-
资助金额:$2.05万
-
财政年份:2002
-
负责人:SANO Nobuyuki
-
依托单位:
Study on Device Lifetime Uncertainty asscociated with Substrate Current Fluctuation in Ultrasmall Semiconductor Devices
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批准号:10555115
-
项目类别:Grant-in-Aid for Scientific Research (B).
-
资助金额:$3.58万
-
财政年份:1998
-
负责人:SANO Nobuyuki
-
依托单位:
海外基金