High-efficiency thermoelectric devices with Si nanostructures and their measurement techniques

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Our research goals are the enhancement of Si thermoelectric characteristics by nanosturcturing and the construction of a novel technique characterizing the nanostructured materials. We found that Seebeck coefficient(thermoelectromotive force at a temperature deference of 1OC) of ultrathin Si is ruled by an impurity band and that Seebeck coefficient is controllable by external bias. Moreover, We have successfully obtained the Si Seebeck coefficient by surface-potential microscopy.