Study of the fabrication and properties of the integration between Si-MEMS structure and nitride electronic and photonic devices

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Nitride semiconductor quantum-well, quantum dots and light-emitting diode structure were deposited on the flat Si, Si microstructure and Si-MEMS structure. High quantum efficiency and high emission were observed. Also, AlGaN/GaN HEMT was fabricated and typical transistor I/V property was obtained. Furthermore, micro pressure transducer was fabricated with the AlGaN/GaN HEMT by Si-micromaching process and the related properties were evaluated. The characteristics of the fabricated transistors were measured.