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Crystal growth of 3C-SiC on Si substrates by channel epitaxy method

沟道外延法在硅衬底上生长3C-SiC晶体

基本信息

批准号：
13450012
负责人：
NISHINO Shigehiro
金额：
$ 9.54万
依托单位：
Kyoto Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2002
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13450012/
关键词：
channel epitaxy 3C-SiC heteroepitaxial growth selective growth silicon carbide cubic SiC CVD method vapor phase growth 横方向成長エアーブリッジ構造ファセット成長 ELO SiC on Si 立方晶 SiC EL0

项目摘要

This study reports on heteroepitaxial growth of 3C-SiC on Si substrate with channel epitaxy method in order to reduce the high density of defects and the strain in the 3C-SiC epilayer. It has been necessary to investigate the epitaxial growth close to the 3C-SiC/Si interface. 3C-SiC layer was grown mainly on a (111) and (100) silicon substrates by using Si2(CH3)6 (Hexamathyldisilane : HMDS). The diameter of each 3C-SiC island depended on the temperature of CVD growth at an early stage of epitaxial growth of 3C-SiC on Si substrate.Three-dimensional fine structures were formed by using "micro-channel epitaxy (MCE)". It was important to parepare the line and space structures by Reactive Ion Etching method. Line and space interval is a key to obtain good channel epitaxy. The crystallinity of formed in MCE became like polycrystalline without the control of nucleation and growth. This result may be improved by close control of experimental parameters at initial stage of 3C-SiC grown on Si substrates. T-shape pattern was formed on the Si(100) substrate and this structure was effective to get channel epitaxy. In this case, we call this shape as vertial channel epitaxy. Epitaxial layer was grown on the top of T-shape area not from the channel in the Si substrate. Carbonization was a key to obtain smooth epi-layer on the T-shape plate. Once epilayers extends nicely on the T-shape area, those layers coalescences to neighbor epilayer. Coalescenced region was examine by TEM. Annihilation of defects should be studied in detail.

本文报道了采用沟道外延的方法在硅衬底上异质外延生长3C-SiC，以降低3C-SiC外延层中的高密度缺陷和应变。研究3C-SiC/Si界面附近的外延生长是很有必要的。用Si2(CH3)6(六甲基二硅烷：HMDS)在a(111)和(100)硅衬底上生长了3C-SiC层。在Si衬底上外延生长3C-SiC的初期，CVD生长的温度决定了3C-SiC岛的直径，利用“微通道外延(MCE)”技术形成了三维精细结构。采用反应离子刻蚀的方法对线结构和空间结构进行优化是非常重要的。线间距是获得良好沟道外延的关键。在没有形核和生长控制的情况下，MCE中形成的结晶度变得像多晶一样。在Si衬底上生长3C-碳化硅初期，通过严格控制实验参数，可以改善这一结果。在Si(100)衬底上形成了T型结构，这种结构有效地实现了沟道外延。在这种情况下，我们将这种形状称为垂直通道外延。外延层生长在T形区域的顶部，而不是从硅衬底中的沟道生长。碳化是T形板获得光滑表面层的关键。一旦外延层在T形区域很好地延伸，这些层就会结合到相邻的外延层。用透射电子显微镜观察聚集区。应对缺陷的湮灭进行详细研究。