InGaN CRYSTAL GROWTH ON Si SUBSTRATE BY ALTERNATING SOURCE SUPPLY MBE

通过交替源供应 MBE 在 Si 衬底上生长 InGaN 晶体

• 批准号: 07650363
• 负责人: HASHIMOTO Akihiro
• 金额: $ 1.34万
• 依托单位: FUKUI UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07650363/
• 关键词: ALTERNATING SOURCE SUPPLY MBE; III-V NITRIDES; InGaN; Si; HIGHLY LATTICE MISMATCHED HETEROEPITAXY; 窒化物半導体; 格子不整合ヘテロエピタクシー

III-V nitrides crystal growth on Si substrates is very important issue not only from the fundamental views of the crystal growth processes but also from the device application views. Aim of the project is the investigation of the nitridation processes at the initial growth stage in III-V nitrides on Si substrates and their control by the alternating source supply method in the molecular beam epitaxy (MBE).It has been found that the alternating source supply method using the trimethyl Ga (TMG) and the dimethyl-hydrazine (DMHy) is very effective to prevent from the nitridation of the Si substrates at the initial growth stages of GaN crystal growth. It has also made clear the elementary conversion processes from the III-As compound semiconductor to their derived III-Nitrides by the counter diffusion of As and N atoms. The InGaN/GaN quantum well structures and the GaN nono-column structures have been succesfully fabricated by the well-controlled nitridation procerss.

无论从晶体生长过程的基本观点还是从器件应用的角度来看，在硅衬底上生长III-V氮化物晶体都是一个非常重要的问题。本项目旨在研究分子束外延(MBE)中III-V氮化物生长初期的氮化过程及其控制方法。结果表明，采用三甲基镓(TMG)和二甲基肼(DMHy)交替供应的方法可以有效地防止GaN晶体生长初期硅衬底的氮化。通过As和N原子的反向扩散，阐明了从III-As化合物半导体到其衍生的III-氮化物的基本转化过程。利用可控氮化工艺成功地制备了InGaN/GaN量子阱结构和GaN非柱结构。

项目成果

A.Hashimoto: "Nitridation of GaAs(III) by DMHy with As_4 Moleculon Blem" Journal of Crystal Growth. (1998)

A.Hashimoto：“DMHy 与 As_4 分子 Blem 氮化 GaAs(III)”《晶体生长杂志》。

A.Hashimoto: "Initial Growth stage of GaN on Si Substrate by Alternating Source Supply using Dimethyl-hydrazine" Abstracts of 9th International Conference on MBE. 3-18 (1996)

A.Hashimoto：“通过使用二甲基肼的交替源供应来实现硅衬底上 GaN 的初始生长阶段”第九届国际 MBE 会议摘要。

A.Hashimoto: "Formation of GaN Nano-iolumn Stiucture by Nitridation suing DMHy" Material Science Foram. 264-268. 1129-1132 (1998)

A.Hashimoto：“利用 DMHy 进行氮化形成 GaN 纳米柱结构”材料科学论坛。

A.Yamamoto: "A Comparative Study of OMVPE Growth InN Heteroepitaxial layers on GaAs(111) and α-Al_2O_3(0001) Substrates" Abstracts of ACCG-10/ICVGE-9. 95- (1996)

A. Yamamoto：“GaAs(111) 和 α-Al_2O_3(0001) 基板上 OMVPE 生长 InN 异质外延层的比较研究”ACCG-10/ICVGE-95 摘要。

A.Yamamoto, Y.Yamauchi, M.Ohkubo, A Hashimoto and T.Saitoh: "Heteroepitaxial growth of InN on Si (111) using a GaAs intermediate layr" Solid-State Electronics. 41. 149-154 (1997)

A.Yamamoto、Y.Yamauchi、M.Ohkubo、A Hashimoto 和 T.Saitoh：“使用 GaAs 中间层在 Si (111) 上异质外延生长 InN”固态电子学。