High-density formation of functionalized nano-interfaces based on semiconductor porous structures for high-sensitive chemical-sensing technology

点击翻译按钮获取中文摘要

We proposed a novel ion-sensitive field-effect transistor (ISFET) having a porous-gate structure and established necessary basic technologies. The straight pores were successfully formed vertically on the substrate by the optimized electrochemical conditions. The functionalization of the pore surface was achieved by the deposition of the metal particles and organic molecules after the complete removal of the irregular top layer form the porous structures. Our proposed ISFETs with porous structures demonstrated good performance with a large current signal in the electrolyte, showing promise for high-sensitive chemical sensors.