Integrated quantum-dot devices and single-electron dynamics in graphene

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Graphene nanostructures can be fabricated by carving out of graphene by using electron-beam lithography and reactive plasma etching process. The performance of such nanostructured devices, however, is expected to depend strongly on the sample quality, influence of the substrate, and the chemical nature of sample edges. Therefore, we propose and show one of the possible alternative device structures to probe the graphene nanostructures that the influence of the sample edges can be reduced and Dirac cones can be maintained. Low temperature electron-transport results revealed the evolution of the Coulomb blockade effect and quantum confinement, which are induced by both a uniform perpendicular magnetic field to the graphene sheets and an electrostatic surface-potential by the metal/graphene junction. These experimental results and theoretical analysis indicate that a Dirac-type particle is confined in our mesoscopic grapheme system.