Integrated quantum-dot devices and single-electron dynamics in graphene

石墨烯纳米结构可以通过使用电子束光刻和反应等离子体蚀刻工艺在石墨烯上雕刻而制成。然而，这种纳米结构的设备的性能，预计将强烈依赖于样品的质量，基板的影响，和样品边缘的化学性质。因此，我们提出并展示了一种可能的替代器件结构，以探测石墨烯纳米结构，可以减少样品边缘的影响，并可以保持狄拉克锥。低温电子输运结果揭示了库仑阻塞效应和量子限制的演变，这是由均匀垂直磁场的石墨烯片和静电表面电位的金属/石墨烯结引起的。这些实验结果和理论分析表明，一个Dirac型粒子被限制在我们的介观石墨烯系统。

Graphene nanostructures can be fabricated by carving out of graphene by using electron-beam lithography and reactive plasma etching process. The performance of such nanostructured devices, however, is expected to depend strongly on the sample quality, influence of the substrate, and the chemical nature of sample edges. Therefore, we propose and show one of the possible alternative device structures to probe the graphene nanostructures that the influence of the sample edges can be reduced and Dirac cones can be maintained. Low temperature electron-transport results revealed the evolution of the Coulomb blockade effect and quantum confinement, which are induced by both a uniform perpendicular magnetic field to the graphene sheets and an electrostatic surface-potential by the metal/graphene junction. These experimental results and theoretical analysis indicate that a Dirac-type particle is confined in our mesoscopic grapheme system.