Establishment of nanocell fabrication on semiconductor surface utilizing self-organizational movement of point defects

在几种半导体中，通过离子辐照在其表面形成纳米级的细胞结构。我们的目标是利用这一惊人的现象建立新的纳米制造技术，并研究了GaSb， InSb和Ge的纳米电池制造。在室温照射下，InSb表面100 nm胞间隔的胞格发育规律，无二次孔洞形成，但在较低温度下，这种规律性不足。GaSb的结果与此相反，即在室温下会产生二次空洞，而在较低温度下晶格发育较好。此外，还尝试了填充细胞。

In several semiconductors, nano-scale cellular structure is formed on their surfaces by ion irradiation. We aimed to establish the novel nano-fabrication technique utilizing this astonishing phenomenon and investigated nanocell fabrication for GaSb, InSb and Ge. The cell lattice with 100 nm cell interval on InSb surface develops regularly without secondary void formation by irradiation at room temperature, however, the regularity is insufficient at lower temperature. GaSb reveal the inverse results, that is, the secondary voids are created at room temperature and the cell lattice development is better at lower temperature. Furthermore filling in the cells is tried.