Establishment of nanocell fabrication on semiconductor surface utilizing self-organizational movement of point defects

在几种半导体中，通过离子辐照在其表面上形成纳米尺度的蜂窝结构。我们的目标是建立新的纳米制造技术利用这一惊人的现象和研究的纳米单元制造的GaSb，InSb和Ge。室温下辐照InSb表面，晶胞间距为100 nm的晶胞有序生长，无二次空洞形成，但低温辐照时，这种有序性不够。而GaSb的结果正好相反，即在室温下产生二次空洞，在较低温度下晶胞发展较好。此外，尝试填充细胞。

In several semiconductors, nano-scale cellular structure is formed on their surfaces by ion irradiation. We aimed to establish the novel nano-fabrication technique utilizing this astonishing phenomenon and investigated nanocell fabrication for GaSb, InSb and Ge. The cell lattice with 100 nm cell interval on InSb surface develops regularly without secondary void formation by irradiation at room temperature, however, the regularity is insufficient at lower temperature. GaSb reveal the inverse results, that is, the secondary voids are created at room temperature and the cell lattice development is better at lower temperature. Furthermore filling in the cells is tried.