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Formation of honeycomb structure by ion implantation- clarification of the mechanism and its application to nano-fabrication

离子注入形成蜂窝结构-机理阐明及其在纳米加工中的应用

基本信息

批准号：
14350343
负责人：
TANIWAKI Masafumi
金额：
$ 9.41万
依托单位：
Kochi University of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2004
项目状态：
已结题

项目摘要

The following important conclusion was derived from this study.(1)A part of the Frenkel pairs induced by ion implantation are not recombined, by which the surface defect structure is formed. This was proved quasi-quantitatively.(2)As-formed cellular structure is amorphous and does not show characteristic photoluminescence.(3)The novel nano-fabrication technique using the point defects behavior was proved to be possible by focused ion beam.(4)The characteristic defect formation was searched for element semiconductors and III-V compound semiconductors, and the sponge-like structure was found in Ge besides GaSb and InSb.(5)The dependence of the cellular structure on the surface orientation and the anomalous behavior for implanted ZnO was detected.The most valuable fruit of this study is that it brought several new subjects in material science and its application for us. First this study offered a new tool for the investigation for the lattice defect in semiconductors. There is little knowledge on the point defects in semiconductors, especially compound semiconductors, which is due to the lack of proper technique for these estimation. The cellular structure, which is visible, is used for probe of vacancies and interstitials, then their formation energies and migration energies is obtained by the observation of its formation and growth. Secondly fabrication of nano-devices should be challenged, because it was shown that the proposed nano-fabrication is possible. Magnetic devices and photo devices will be realized.

从这项研究中得出了以下重要结论。(1)A离子注入所产生的部分Frenkel对没有复合，形成表面缺陷结构。这是准定量证明。（2）所形成的胞状结构是无定形的，并且不显示特征性的光致发光。（3）利用聚焦离子束的点缺陷特性，实现了纳米加工的新技术。（4）对元素半导体和III-V族化合物半导体的特征缺陷形成进行了研究，发现除了GaSb和InSb外，Ge中还存在海绵状结构。（5）研究了ZnO的胞状结构对表面取向的依赖性和注入ZnO的反常行为，为材料科学及其应用带来了新的课题。首先，本研究为半导体晶格缺陷的研究提供了一种新的工具。半导体材料中的点缺陷，特别是化合物半导体材料中的点缺陷，由于缺乏合适的测量技术，人们对点缺陷的认识还很少。利用可见的胞状结构探测空位和杂质，通过观察空位和杂质的形成和生长，得到空位和杂质的形成能和迁移能。其次，纳米器件的制造应该受到挑战，因为它表明，拟议的纳米制造是可能的。磁器件和光器件将被实现。