Planar nanowire field-effect transistors using selective-area epitaxy on(110)

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We formed in-plane InAs nanowires using selective-area molecular beam epitaxy on GaAs(110) masked substrates with a certain condition. Moreover, we fabricated planar nanowire field-effect transistors by conventional lithography. We measured their output and transfer characteristics at room temperature, and magneto-conductivity at low temperatures. Maximum current and trans-conductance are 2. 3A/mm and 4. 9mS/mm, respectively, and spin-orbit coupling is observed.