Development of high sensitivity non-radiation defect characterization systems for diamond semiconductor

金刚石半导体高灵敏度非辐射缺陷表征系统的开发

• 批准号: 22760300
• 负责人: MAIDA Osamu
• 金额: $ 2.58万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2010
• 资助国家: 日本
• 起止时间: 2010 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22760300/
• 关键词: ダイヤモンド; ワイドギャップ; 非輻射欠陥

The purpose of this work is to develop a non-radiative defect characterization system for wide-gap semiconductor materials, especially diamond crystal. I have developed a temperature-variable(80～400K) photothermal spectroscopy using a high-sensitive signal detector with a piezoelectric device, and carried out the defect characterization of a high-pressure/ high-temperature synthesized diamond crystal and a self-standing homoepitaxial diamond film grown by a micro-wave plasma chemical vapor deposition method.

本工作的目的是发展一套宽禁带半导体材料，特别是金刚石晶体的非辐射缺陷表征系统。我已经开发了一个变温（80~ 400 K）光热光谱使用高灵敏度的信号检测器与压电装置，并进行了缺陷表征的高压/高温合成金刚石晶体和自立同质外延金刚石薄膜的微波等离子体化学气相沉积方法。

项目成果

Growth of phsphorus-doped homoepitaxial CVD diamond on vicinal (001) substrates

在邻位 (001) 基底上生长掺磷同质外延 CVD 金刚石

• 发表时间: 2011
• 作者: Y.Ashizawa;S.Shinohara;T.Nawata;K.Nakagawa;H.Nishio
• 通讯作者: H.Nishio

Improvement on p-type performance of CVD diamond by isolating thin heavily-boron-doped layer as innumerable islands

通过将薄重硼掺杂层隔离为无数岛来改善 CVD 金刚石的 p 型性能

• 发表时间: 2011
• 作者: O. Maida;M. Aono;T. Ito
• 通讯作者: T. Ito

Fabrication of self-standing device-quality single-crystalline diamond films on vicinal (001) surfaces and its application to the high-energy photon detectors

邻位（001）表面自支撑器件质量单晶金刚石薄膜的制备及其在高能光子探测器中的应用

• 发表时间: 2010
• 作者: O. Maida;S. Iguchi;T. Igarashi;H. Sato;T. Ito
• 通讯作者: T. Ito

Hall data analysis of heavily-boron-doped CVD diamond films based on a two-type carrier model and their application to improvement on p-type performance of CVD diamond

基于两型载流子模型的重硼掺杂CVD金刚石薄膜霍尔数据分析及其在改善CVD金刚石p型性能中的应用

• 发表时间: 2010
• 作者: Ikuta;Y.;M.Aono
• 通讯作者: M.Aono

Survey meter combining CVD diamond and silicon detectors for wide range of dose rates and high accumulated doses

• DOI: 10.1016/j.radmeas.2012.02.011
• 发表时间: 2012-04
• 期刊: Radiation Measurements
• 影响因子: 2
• 作者: Hidenori Sato;Akihito Yamaguchi;O. Maida;T. Ito