Development of high sensitivity non-radiation defect characterization systems for diamond semiconductor

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The purpose of this work is to develop a non-radiative defect characterization system for wide-gap semiconductor materials, especially diamond crystal. I have developed a temperature-variable(80～400K) photothermal spectroscopy using a high-sensitive signal detector with a piezoelectric device, and carried out the defect characterization of a high-pressure/ high-temperature synthesized diamond crystal and a self-standing homoepitaxial diamond film grown by a micro-wave plasma chemical vapor deposition method.