Distribution, Segregation and Dose-loss of Dopants in Deca-nanometer SOI Structures

为了发展未来的超大规模集成十纳米器件(特征尺寸约为10 nm)，考虑了硅层厚度约为50 nm的绝缘体上硅结构。这些层可能最终包含硅-锗异质结。除了载流子迁移率外，这类材料的一个主要问题是杂质与周围材料的界面分离。Erlangen-Nürnberg大学的“电子器件(LEB)主席”将通过创新的实验和理论相结合的方法来研究这种分离效应，这种方法只有在一个国际研究团队的合作下才能成为可能。在工作计划内，LEB将执行所需样品的大部分处理。然后，他们的掺杂分布将在北卡罗来纳州立大学进行表征，结果将用于LEB，以开发表面分离的动力学模型。这些调查将进一步利用俄亥俄州立大学的从头计算模拟。在合作中，LEB还将支持瑞典基斯塔皇家技术大学的技术工作，在那里将为英国德蒙福特大学莱斯特的迁移率测量制造十进制纳米设备。

For the development of future ultra-large-scale-integrated deca-nanometer devices (with feature sizes of some 10 nm) silicon-on-insulator structures are taken into consideration with thicknesses of the silicon layer of about 50 nm. These layers may eventually contain silicon-germanium heterojunctions. A main problem for such materials besides the charge-carrier mobility is the segregation of dopants to interfaces to the surrounding materials. The "chair of electron devices (LEB)" of the University Erlangen-Nürnberg will investigate such segregation effects by a combination of innovative experimental and theoretical approaches which become possible only by the cooperation of an international research team. Within the work program, the LEB will perform a substantial part of the processing of the samples required. Their dopant distribution will then be characterized at the North Carolina State University and, the results will be used at the LEB to develop a kinetic mode for surface segregation. These investigations will further exploit the ab-initio simulations of the Ohio State University. Within the cooperation, the LEB will also support technological work at the Royal Technical University Kista / Sweden where deca-nanometer devices will be made for mobility measurements at the DeMontfort University Leicester / UK.