Distribution, Segregation and Dose-loss of Dopants in Deca-nanometer SOI Structures

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For the development of future ultra-large-scale-integrated deca-nanometer devices (with feature sizes of some 10 nm) silicon-on-insulator structures are taken into consideration with thicknesses of the silicon layer of about 50 nm. These layers may eventually contain silicon-germanium heterojunctions. A main problem for such materials besides the charge-carrier mobility is the segregation of dopants to interfaces to the surrounding materials. The "chair of electron devices (LEB)" of the University Erlangen-Nürnberg will investigate such segregation effects by a combination of innovative experimental and theoretical approaches which become possible only by the cooperation of an international research team. Within the work program, the LEB will perform a substantial part of the processing of the samples required. Their dopant distribution will then be characterized at the North Carolina State University and, the results will be used at the LEB to develop a kinetic mode for surface segregation. These investigations will further exploit the ab-initio simulations of the Ohio State University. Within the cooperation, the LEB will also support technological work at the Royal Technical University Kista / Sweden where deca-nanometer devices will be made for mobility measurements at the DeMontfort University Leicester / UK.