Distribution, Segregation and Dose-loss of Dopants in Deca-nanometer SOI Structures

对于未来超大规模集成十纳米器件（特征尺寸约为10 nm）的开发，考虑了绝缘体上硅结构，其中硅层的厚度约为50 nm。这些层可能最终包含硅锗异质结。除了电荷载流子迁移率之外，这种材料的主要问题是掺杂剂与周围材料的界面的隔离。埃尔朗根-纽伦堡大学的“电子器件主席（LEB）”将通过创新的实验和理论方法相结合来研究这种隔离效应，只有通过国际研究团队的合作才能实现。在工作计划中，LEB将执行所需样品的大部分处理。它们的掺杂剂分布将在北卡罗来纳州州立大学进行表征，其结果将在LEB用于开发表面偏析的动力学模式。这些研究将进一步利用俄亥俄州州立大学的从头算模拟。在合作范围内，LEB还将支持瑞典Kista皇家技术大学的技术工作，在英国莱斯特DeMontfort大学将制造用于流动性测量的十纳米设备。

For the development of future ultra-large-scale-integrated deca-nanometer devices (with feature sizes of some 10 nm) silicon-on-insulator structures are taken into consideration with thicknesses of the silicon layer of about 50 nm. These layers may eventually contain silicon-germanium heterojunctions. A main problem for such materials besides the charge-carrier mobility is the segregation of dopants to interfaces to the surrounding materials. The "chair of electron devices (LEB)" of the University Erlangen-Nürnberg will investigate such segregation effects by a combination of innovative experimental and theoretical approaches which become possible only by the cooperation of an international research team. Within the work program, the LEB will perform a substantial part of the processing of the samples required. Their dopant distribution will then be characterized at the North Carolina State University and, the results will be used at the LEB to develop a kinetic mode for surface segregation. These investigations will further exploit the ab-initio simulations of the Ohio State University. Within the cooperation, the LEB will also support technological work at the Royal Technical University Kista / Sweden where deca-nanometer devices will be made for mobility measurements at the DeMontfort University Leicester / UK.