Development of evaluation method of crystallinity in poly-crystallized silicon thin film for bottom gate type TFT by surface photo-voltage
Development of evaluation method of crystallinity in poly-crystallized silicon thin film for bottom gate type TFT by surface photo-voltage
批准号:
23560372
负责人:
IKEDA Masanori
金额:
$3.41万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2011
资助国家:
日本
项目状态:
已结题
起止时间:
2011 至 2013
中文摘要
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英文摘要
Evaluation method of crystallinity in poly-crystallized silicon thin film was investigated by alternative surface photo-voltage (AC SPV). Sensitive AC SPV measurement was achieved by the change of light source for carrier excitation from light-emitting diode (LED) to laser diode (LD). The ratio of AC SPV to radius of grain in poly-silicon thin film crystallized by excimer laser annealing was estimated about 1 mV/nm. Furthermore, it was shown that there is a problem of the saturation in AC SPV with high power light irradiation.
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采用表面光电压法评价热处理非晶硅薄膜的结晶度
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
[葛生一馬, 池田正則, 清水博文, 高松弘行, 迫田尚和]
通讯作者:
迫田尚和
表面光電圧法による熱処理したa-Si薄膜の結晶性評価
采用表面光电压法评价热处理非晶硅薄膜的结晶度
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
[葛生一馬, 池田正則, 清水博文, 高松弘行, 迫田尚和]
通讯作者:
迫田尚和
Au水溶液浸漬によるAu/n-Si(100)ショットキー障壁の形成
浸没在 Au 水溶液中形成 Au/n-Si(100) 肖特基势垒
DOI:
--
发表时间:
2012
期刊:
表面科学
影响因子:
--
作者:
[池田正則, 清水博文]
通讯作者:
清水博文
Alternating Current Surface Photovoltage in Thermally Oxidized Cr-Contaminated n-Type Silicon Wafers
热氧化铬污染 n 型硅片中的交流表面光电压
DOI:
--
发表时间:
2011
期刊:
Applied Physics A
影响因子:
--
作者:
[H. Shimizu, S. Nagase, and M. Ikeda]
通讯作者:
and M. Ikeda
ω-SPV法によるSiウェーハの少数キャリア寿命評価
使用 ω-SPV 方法评估硅片少数载流子寿命
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[H. Goto, Y. Tsuji, T. Yasui, and K. Hirayama, 板野純希,清水博文,池田正則]
通讯作者:
板野純希,清水博文,池田正則
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