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Development of evaluation method of crystallinity in poly-crystallized silicon thin film for bottom gate type TFT by surface photo-voltage

Development of evaluation method of crystallinity in poly-crystallized silicon thin film for bottom gate type TFT by surface photo-voltage
底栅型TFT用多晶硅薄膜的结晶度表面光电压评价方法的开发
批准号:
23560372
负责人:
IKEDA Masanori
金额:
$3.41万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2011
资助国家:
日本
项目状态:
已结题
起止时间:
2011 至 2013

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中文摘要
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英文摘要
Evaluation method of crystallinity in poly-crystallized silicon thin film was investigated by alternative surface photo-voltage (AC SPV). Sensitive AC SPV measurement was achieved by the change of light source for carrier excitation from light-emitting diode (LED) to laser diode (LD). The ratio of AC SPV to radius of grain in poly-silicon thin film crystallized by excimer laser annealing was estimated about 1 mV/nm. Furthermore, it was shown that there is a problem of the saturation in AC SPV with high power light irradiation.
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DOI: --
发表时间: 2013
期刊:
影响因子: --
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DOI: --
发表时间: 2012
期刊: 表面科学
影响因子: --
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发表时间: 2011
期刊: Applied Physics A
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