Study of high Tc kinetic inductance detectors with low noise and high temperature operation

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We studied a fundamental research in order to realize kinetic inductance detectors (KIDs) using high-temperature superconductors. For the goal of the production of KID element, the Bi-2212 superconducting thin gilmes were prepared by the PLD and the MOD methods on sapphire substrates with low loss properties at high frequency. We found that CeO buffer layers were effective for Bi-2212 thin film deposition. The thin films showed the critical temperature of 65K, and were evaluatd using both of critical current density and high-frequency surface resistance. In order to produce the KID detectors, evaluations from simulations of the kinetic inductance were implemented. Furthermore, we studied the design of KID components, and the responses of light irradiation were confirmed using the NbN KID detectors as supplementary study.