Mechanism elucidation of resistive switching mechanism using atomic force microscope in oxide-based ReRAM

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We made resistive random access memory (ReRAM) structures using Bi2Sr2CaCu2O8+δ (Bi-2212) single crystal as the memory layer. It was clarified that the introduction of oxygen vacancies to the Bi-2212 single crystal was required for the development of the memory effect and could be achieved by depositing electrodes with low Gibbs free energies. The model which explains the resistance switching of perovskite-oxide-based-ReRAM was proposed based on the results. In addition, we, for the first time, demonstrated that the resistive switching can be caused by migration of hydrogen ions.