SHF: Small: Architectural Support for Reliable ReRAM Crossbar Memory

SHF：小型：对可靠 ReRAM 交叉开关内存的架构支持

• 批准号: 1617071
• 负责人: Jun Yang
• 金额: $ 45万
• 依托单位: University of Pittsburgh
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2016
• 资助国家: 美国
• 起止时间: 2016-07-01 至 2020-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1617071&HistoricalAwards=false
• 关键词: SHF; Small; Architectural; Support; Reliable

Driven by prevailing applications that process extreme volume of data, the quest for large memory capacity has become increasingly strong. Conventional DRAM-based memory is facing severe technology scaling limitations such as process variations, which hinders the growth in memory density at reasonable cost. Such challenges inspire the search for alternative memory technologies such as the emerging non-volatile Resistive RAMs (ReRAM). ReRAM exploits resistance of Metal-Oxide-Metal structure to represent stored information. It has shorter read and write latency, and better write endurance when compared with other non-volatile memories. ReRAM exhibits superior scalability and can be architected to build high-density memories using a crossbar structure, or 3D stacking. Such features make ReRAM a competitive technology as a DRAM replacement to achieve significant large memory capacity for modern data intensive applications. Education objectives will be achieved through broad dissemination of results via publications, research seminars, tutorials, software demonstrations, conference participation, and technology transfer initiatives. Continuous student training will be carried through involving graduate, undergraduate students, especially underrepresented students in this research. There are major difficulties in building a large memory using the crossbar ReRAM architecture. The reliability of the memory is challenged by its large sneak leakage, operation disturbance and endurance. This research aims to tackle those challenges by investigating novel cell-array organizations and management techniques to reduce sneak leakage, minimize disturbance, prolong the lifetime and improve the overall reliability of the new memory structure. This research will ensure that future resistive memories can be developed to become reliable at high density, which helps to fuel the continuation of Moore?s Law in memory advancement.

在处理极大量数据的流行应用程序的驱动下，对大存储器容量的需求变得越来越强烈。传统的基于DRAM的存储器正面临着严重的技术缩放限制，例如工艺变化，这阻碍了以合理成本实现存储器密度的增长。这些挑战激发了对替代存储器技术的研究，例如新兴的非易失性电阻式RAM（ReRAM）。ReRAM利用金属氧化物金属结构的电阻来表示存储的信息。与其他非易失性存储器相比，它具有更短的读写延迟和更好的写入耐久性。ReRAM表现出上级可扩展性，并且可以使用交叉结构或3D堆叠来构建高密度存储器。这些特性使ReRAM成为一种有竞争力的技术，可以替代DRAM，为现代数据密集型应用提供巨大的存储容量。教育目标将通过出版物、研究研讨会、辅导、软件演示、参加会议和技术转让倡议广泛传播成果来实现。持续的学生培训将通过涉及研究生，本科生，特别是代表性不足的学生在这项研究中进行。使用交叉ReRAM架构构建大型存储器存在主要困难。存储器的大泄漏、操作干扰和耐久性对存储器的可靠性提出了挑战。本研究旨在通过研究新的单元阵列组织和管理技术来解决这些挑战，以减少潜漏，最大限度地减少干扰，延长寿命，提高新存储器结构的整体可靠性。这项研究将确保未来的电阻存储器可以发展成为可靠的高密度，这有助于燃料的延续摩尔？记忆力提升的法则。

项目成果

PEP: Proactive Checkpointing for Efficient Preemption on GPUs

PEP：主动检查点以实现 GPU 上的高效抢占

• DOI: 10.1109/dac.2018.8465929
• 发表时间: 2018
• 期刊: 2018 55th ACM/ESDA/IEEE Design Automation Conference (DAC
• 作者: Li, Chen;Yang, Jun;Zigerelli, Andrew;Guo, Yang
• 通讯作者: Guo, Yang

DrAcc: a DRAM based Accelerator for Accurate CNN Inference

DrAcc：基于 DRAM 的准确 CNN 推理加速器

• DOI: 10.1109/dac.2018.8465866
• 发表时间: 2018
• 期刊: 2018 55th ACM/ESDA/IEEE Design Automation Conference (DAC
• 作者: Deng, Quan;Jiang, Lei;Zhang, Youtao;Zhang, Minxuan;Yang, Jun
• 通讯作者: Yang, Jun

Enabling Intra-Plane Parallel Block Erase in NAND Flash to Alleviate the Impact of Garbage Collection

• DOI: 10.1145/3218603.3218627
• 发表时间: 2018-07
• 期刊: Proceedings of the International Symposium on Low Power Electronics and Design
• 作者: Tyler Garrett;Jun Yang;Youtao Zhang

A Process-Variation-Tolerant Method for Nanophotonic On-Chip Network

纳米光子片上网络的工艺变化容忍方法

• DOI: 10.1145/3208073
• 发表时间: 2018
• 期刊: ACM Journal on Emerging Technologies in Computing Systems
• 影响因子: 2.2
• 作者: Xu, Yi;Yang, Jun;Melhem, Rami
• 通讯作者: Melhem, Rami

Wear Leveling for Crossbar Resistive Memory

• DOI: 10.1145/3195970.3196138
• 发表时间: 2018-06
• 期刊: 2018 55th ACM/ESDA/IEEE Design Automation Conference (DAC)
• 作者: Wen Wen-Wen;Youtao Zhang;Jun Yang