Development of a multi-functional molecular memory based on current silicon process

基于当前硅工艺的多功能分子存储器的开发

• 批准号: 23686051
• 负责人: HAYAKAWA Ryoma
• 金额: $ 17.64万
• 依托单位: National Institute for Materials Science
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (A)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23686051/
• 关键词: 単一電子メモリ; 分子; 光; 多値; 光制御; 多値制御; 分子ドット; 多値動作; 単一電子トンネリング; 磁場

We have proposed a multi-functional single-electron memory, where attractive organic molecules are embedded as quantum dos in a gate insulating layer. If single-electron tunneling can be controlled by energy levels of molecules, new functions, which are not realized in current inorganic quantum dots, would be integrated into current Si-based memory devices. In this study, we established a technique to embed molecules in an insulating layer without destroying them. As a result, we successfully demonstrated single-electron tunneling through molecules embedded in the proposed devise structure. The finding brought us two attractive functions, which are multilevel operation of tunneling current by heterogeneous molecules and optical manipulation with diarylethene photochromic molecules. Our achievements suggest that organic molecules possess high potential for a breakthrough in Si-based technology.

我们提出了一种多功能单电子存储器，其中有吸引力的有机分子作为量子dos嵌入在栅极绝缘层中。如果单电子隧穿可以通过分子的能级来控制，那么在现有的无机量子点中没有实现的新功能将被集成到现有的Si基存储器件中。在这项研究中，我们建立了一种技术，将分子嵌入绝缘层而不破坏它们。因此，我们成功地证明了单电子隧穿通过嵌入在拟议的设计结构的分子。这一发现给我们带来了两个很有吸引力的功能，即异质分子对隧穿电流的多级操纵和二芳基乙烯光致变色分子的光学操纵。我们的成就表明，有机分子具有很高的潜力，在硅基技术的突破。

项目成果

Room temperature observation of single-electron tunneling via fullerene quantum dots in a Si-based device structure

硅基器件结构中富勒烯量子点单电子隧道效应的室温观察

• 发表时间: 2012
• 作者: N.Tate;W.Nomura;M.Naruse;T.Kawazoe;T.Yatsui;M.Hoga;Y.Ohyagi;Y.Sekine;H.Fujita;M.Ohtsu;早川竜馬;早川竜馬
• 通讯作者: 早川竜馬

Integration of molecular functionalities into Si-based devices

将分子功能集成到硅基器件中

• 发表时间: 2013
• 作者: Ryoma Hayakawa;Kenji Higashiguchi;Kenji Matsuda;Toyohiro Chikyow;Yutaka Wakayama;早川 竜馬;Ryoma Hayakawa;Ryoma Hayakawa;Ryoma Hayakawa;Ryoma Hayakawa;Ryoma Hayakawa
• 通讯作者: Ryoma Hayakawa

Single-Electron Tunneling via Molecular Quantum Dots Embedded in a Metal-Insulator-Semiconductor Structure

通过嵌入金属-绝缘体-半导体结构中的分子量子点实现单电子隧道效应

• 发表时间: 2011
• 作者: Yatsui;Gyu-Chul Yi;Motoich;早川竜馬;Ryoma Hayakawa;Ryoma Hayakawa;Ryoma Hayakawa;Ryoma Hayakawa
• 通讯作者: Ryoma Hayakawa

Photoisomerization -induced manipulation of single-electron tunneling for novel Si-based optical memory

新型硅基光存储器的光异构化诱导单电子隧道操纵

• DOI: 10.1021/am403616m
• 发表时间: 2013
• 期刊: ACS Appl. Matter. Interfaces
• 作者: Ryoma Hayakawa;Kenji Higashiguchi;Kenji Mtsuda;Toyohiro Chikyow;Yutaka Wakayama
• 通讯作者: Yutaka Wakayama

Single-electron tunneling via molecular quantum dots in a silicon-based device configuration

在硅基器件配置中通过分子量子点实现单电子隧道效应

• 发表时间: 2012
• 作者: Y.Liu;T.Yatsui;T.Kawazoe;M.Ohtsu;Ryoma Hayakawa
• 通讯作者: Ryoma Hayakawa