Atomic-scale flattening of Ge surfaces free from metallic contamination by a flat catalyst to enhance oxygen reduction reactions in water
Atomic-scale flattening of Ge surfaces free from metallic contamination by a flat catalyst to enhance oxygen reduction reactions in water
批准号:
24686020
负责人:
ARIMA KENTA
金额:
$16.81万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (A)
财政年份:
2012
资助国家:
日本
项目状态:
已结题
起止时间:
2012-04-01 至 2016-03-31
中文摘要
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英文摘要
期刊论文(0)
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Formation of Graphene with Reduced Pits on SiC(0001) Assisted by Plasma Oxidation and Wet Etching
等离子体氧化和湿法刻蚀辅助 SiC(0001) 上凹坑减少的石墨烯形成
DOI:
--
发表时间:
2014
期刊:
影响因子:
--
作者:
[Daichi Mori, Naoki Saito, Akito Imafuku, Kentaro Kawai, Yasuhisa Sano, Mizuho Morita and Kenta Arima]
通讯作者:
Mizuho Morita and Kenta Arima
Origin of Anomalous Positive Charging of Water-adsorbed Thin GeO2 Films Studied by Ambient-pressure XPS
常压 XPS 研究吸水 GeO2 薄膜异常正电荷的起源
DOI:
--
发表时间:
2015
期刊:
影响因子:
--
作者:
[K. Arima, D. Mori, Y. Saito, H. Oka, K. Kawai, T. Hosoi, M. Morita, H. Watanabe and Z. Liu]
通讯作者:
H. Watanabe and Z. Liu
Catalytic Behavior of Metallic Particles in Anisotropic Etching of Ge(100) Surfaces in Water Mediated by Dissolved Oxygen
金属颗粒在溶解氧介导的水中 Ge(100) 表面各向异性刻蚀中的催化行为
DOI:
10.1063/1.4730768
发表时间:
2012
期刊:
Journal of Applied Physics
影响因子:
3.2
作者:
[Junichi Uchikoshi, Yoshinori Hayashi, Noritaka Ajari, Kentaro Kawai, Kenta Arima and Mizuho Morita, Yasuhisa Sano et al., Atsushi Mura et al., Tatsuya Kawase et al.]
通讯作者:
Tatsuya Kawase et al.
Comparison of Wetting Properties between GeO2/Ge and SiO2/Si Revealed by in-situ XPS
原位 XPS 显示 GeO2/Ge 和 SiO2/Si 润湿性能比较
DOI:
--
发表时间:
2014
期刊:
影响因子:
--
作者:
[Naoki Saito, Kenta Arima et al., Kenta Arima]
通讯作者:
Kenta Arima
Analysis of Enhanced Oxygen Reduction Reaction on Ge(100) Surface in Water Toward Metal-free Machining Process
水中 Ge(100) 表面强化氧还原反应无金属加工分析
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[Naoki Saito, Kenta Arima et al., Kenta Arima, Kenta Arima, K. Arima, Kenta Arima, K. Arima, Kenta Arima, Naoki Saito, K. Arima, Atsushi Mura]
通讯作者:
Atsushi Mura
共 42 条
Creation of semiconductor surface for the next generation by catalytic tool free from metallic element
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批准号:26630026
-
项目类别:Grant-in-Aid for Challenging Exploratory Research
-
资助金额:$2.5万
-
财政年份:2014
-
负责人:ARIMA KENTA
-
依托单位:
Graphene growth on ultraflat SiC surfaces assisted by preferential etching of surface Si atoms
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批准号:24656101
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.58万
-
财政年份:2012
-
负责人:ARIMA KENTA
-
依托单位:
海外基金