Study on Neutron Damage Dynamics of Semiconductor Materials

为了从微观角度研究中子损伤效应，高密度集成电路（IC）如CCD图像传感器被成功地用作中子辐照实验的样品。用CCD图像传感器清晰地测量了中子在硅晶体中反应产生的高能粒子的径迹。对（n，p）、（n，α）等中子反应径迹的测量图像数据与TRIM程序计算结果吻合较好，表明使用CCD传感器等精密器件从微观角度研究中子损伤是有效的。根据中子损伤常数的实验结果，得到了DT-DD中子损伤CCD图像传感器的相关因子为1.4-1.6。用能谱系统测量了硅表面势垒探测器（Si-SBD）对中子和离子的响应。将测量的Si-SBD脉冲高度谱与基于分子动力学的模拟代码、著名的TRIM和MDRANGE计算的结果进行了比较。分子动力学模拟程序对低能区的Si-SBD的响应给出了较好的结果。

In order to examine the neutron damage effects from a microscopic point, highdensity integrated circuits (ICs) such as CCD image sensors were successfully used as samples for neutron irradiation experiments. A CCD image sensor clearly measured tracks of high-energy paticles preduced by neutron reactions in silicon crystal. Measured image data on the tracks by the (n, p), (n, alpha) and other neutron reactions were in good agreement in results calculated with the TRIM code, which suggests that the use of such exquisite devices as CCD sensors are effective in the examination of the neutron damage from a microscopic point. The correlation factor of the DT-DD neutron damage on the CCD image sensors was obtained from experimental results on their neutron damage constants and was found to be 1.4-1.6. This factor approximately agreed with that obtained from the displacement damage calculation.The response of a silicon surface barrier detector (Si-SBD) to neutrons and ions was measured with the energy spectroscopy system. Measured pulse height spectra of a Si-SBD were compared with results calculated with the simulation codes, the well-known TRIM and the MDRANGE based on the molecular dynamics. The molecular dynamics simulation code gave better results on the response of the Si-SBD in lower-energy region.