Study on Radiation-induced Conductivity of Insulation Materials under High Electric Field
高电场下绝缘材料辐射诱发电导率的研究
基本信息
- 批准号:12680510
- 负责人:
- 金额:$ 1.6万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:2000
- 资助国家:日本
- 起止时间:2000 至 2001
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
In order to examine the radiation-induced conductivity (RIG) of insulators, some sapphire samples were irradiated at room temperature with DT neutrons and gamma-rays. The radiation-induced current of the sample was proportional to the radiation flux under a given bias voltage. And the RIG coefficient of the sapphire was about 1 x 10^<-10>/Ω/m/Gy/s. Also, a large transient current was observed at the start of the irradiation. Behavior of radiation-induced charge in the insulator was discussed together with results of pulsed X-ray irradiation experiments on a mineral-insulated (MI) cable. The reduction of the electric resistance of the cable was well measured by use of the pulse-charge measuring system.The charge induced in the central wire of the cable was approximately proportional to the bias voltage and the X-ray dose per pulse, which means that the drift and production rate of charge carriers (i.e., electrons) dominates the degradation of the cable. The average drift length of electrons in the cable insulator (MgO) was estimated to be about 15 nm (bias voltage! 100V and insulator thickness! 1.5 mm). For the detailed analysis of the degradation of the insulator and the MI cable, we need further discussions with numerical calculations based on the Poisson's equation with a precise transport model of electrons in the insulator.
为了测试绝缘体的辐射感生电导率(RIG),在室温下用DT中子和伽马射线对蓝宝石样品进行了辐照。在给定的偏置电压下,样品的辐射感应电流与辐射通量成正比。蓝宝石的Rig系数约为1×10~(-10)/Ω/m/Gy/S,并且在辐照开始时观察到很大的暂态电流。讨论了辐射感生电荷在绝缘子中的行为,并结合矿物绝缘(MI)电缆的脉冲X射线辐照实验结果进行了讨论。利用脉冲电荷测量系统很好地测量了电缆的电阻降低,电缆中心导线中感应的电荷与偏置电压和每脉冲X射线剂量近似成正比,这意味着电荷载流子(即电子)的漂移和产生率控制了电缆的退化。电缆绝缘体中电子的平均漂移长度估计约为15 nm(偏置电压100V,绝缘体厚度1.5 mm)。为了对绝缘体和MI电缆的退化进行详细的分析,我们需要基于泊松方程和精确的电子在绝缘体中的输运模型进行进一步的数值计算。
项目成果
期刊论文数量(12)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
T.Iida,F.Sato and H.Sato: "Electrical Properties of Ceramic Insulators under Irradiation"Proc.1st International Symp.on Supercritical Water-cooled Reactors. Design and Technology. Vol.1. 251-256 (2000)
T.Iida、F.Sato 和 H.Sato:“辐照下陶瓷绝缘体的电性能”Proc.1st International Symp.on 超临界水冷反应堆。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
米澤久恵, 田中照也, 佐藤文信, 飯田敏行: "MIケーブルの放射線誘起電気伝導"応用物理学会第1回先進放射線応用シンポジウム論文集. 159-16* (2001)
Hisae Yonezawa、Teruya Tanaka、Fuminobu Sato、Toshiyuki Iida:“MI 电缆中的辐射感应电传导”日本应用物理学会第一届高级辐射应用研讨会论文集 159-16* (2001)。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
T.Tanaka, H.Yonezawa, F.Sato, T.Iida: "Electrical Properties of Mineral Insulated Cables under Irradiation"Proc. 1st International Symp. on Radiation Safety and Detection Technology. Vol.1. 270-272 (2001)
T.Tanaka、H.Yonezawa、F.Sato、T.Iida:“辐照下矿物绝缘电缆的电气特性”Proc。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
T. Iida, F. Sato and H. Sato: ""Electrical Properties of Ceramic Insulators under Irradiation""Proc. First International Symp. on Supercritical Water-Cooled Reactors, Design and Technology. 251-256 (2000)
T. Iida、F. Sato 和 H. Sato:“辐照下陶瓷绝缘体的电性能”Proc。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
H. Yonezawa, T. Tanaka, F. Sato and T. Iida: ""Pulsed X-ray Induced Conductivity of MI Cables""Ionizing Radiation. Vol. 28, No. 2. (2002)
H. Yonezawa、T. Tanaka、F. Sato 和 T. Iida:“MI 电缆的脉冲 X 射线感应电导率”“电离辐射。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
数据更新时间:{{ journalArticles.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ monograph.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ sciAawards.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ conferencePapers.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ patent.updateTime }}
IIDA Toshiyuki其他文献
Improvement of Low-Energy PIXE System for Precise Surface Analysis
用于精确表面分析的低能量 PIXE 系统的改进
- DOI:
- 发表时间:
2008 - 期刊:
- 影响因子:0
- 作者:
KADA Wataru;ISHIKAWA Ippei;KISHI Atsuya;IHARA Yohei;SATO Fuminobu;KATO Yushi;IIDA Toshiyuki - 通讯作者:
IIDA Toshiyuki
IIDA Toshiyuki的其他文献
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
{{ truncateString('IIDA Toshiyuki', 18)}}的其他基金
Devel opment of Neuron Gircuit Fabrication Method with X-Ray Microbeam
X射线微束神经元回路制作方法的开发
- 批准号:
21360041 - 财政年份:2009
- 资助金额:
$ 1.6万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development of cell chip for examination of radiobiological damage
开发用于放射生物学损伤检查的细胞芯片
- 批准号:
21651021 - 财政年份:2009
- 资助金额:
$ 1.6万 - 项目类别:
Grant-in-Aid for Challenging Exploratory Research
Development of Neural Network Formation Technique using X-ray Micro Beams
利用X射线微束的神经网络形成技术的发展
- 批准号:
19360040 - 财政年份:2007
- 资助金额:
$ 1.6万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Study on Radiation Damage Dynamics of Electrical Insulation Materials
电绝缘材料辐射损伤动力学研究
- 批准号:
10680489 - 财政年份:1998
- 资助金额:
$ 1.6万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Study on Neutron Damage Dynamics of Semiconductor Materials
半导体材料中子损伤动力学研究
- 批准号:
08680525 - 财政年份:1996
- 资助金额:
$ 1.6万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Study on Neutron Damage Dynamics of Semiconductor Crystal
半导体晶体中子损伤动力学研究
- 批准号:
06680469 - 财政年份:1994
- 资助金额:
$ 1.6万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
Study on Fusion-neutron Damage Dynamics of Semiconductor Materials
半导体材料聚变-中子损伤动力学研究
- 批准号:
05558068 - 财政年份:1993
- 资助金额:
$ 1.6万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
Study on Neutron Damage Dynamics of Highly Integrated Semiconductor Devices
高集成半导体器件中子损伤动力学研究
- 批准号:
04680229 - 财政年份:1992
- 资助金额:
$ 1.6万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
Studies on Radiation Response of Optical Fibers
光纤辐射响应的研究
- 批准号:
01580228 - 财政年份:1989
- 资助金额:
$ 1.6万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
相似海外基金
EXPERIMENTAL STUDY ON NUMBER DENSITY AND MOBILITY OF ELECTRIC CARRIER IN A CERAMIC INSULATOR,ALUMINA
陶瓷绝缘体氧化铝中载流子数密度和迁移率的实验研究
- 批准号:
06650737 - 财政年份:1994
- 资助金额:
$ 1.6万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)