Study on Fusion-neutron Damage Dynamics of Semiconductor Materials

半导体材料聚变-中子损伤动力学研究

• 批准号: 05558068
• 负责人: IIDA Toshiyuki
• 金额: $ 6.66万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05558068/
• 关键词: CMOS SRAMIC; Neutron-induced Soft-error; TRIM code; Si-SSD; DT-DD Neutron Damage Correlation; Si (n, alpha) Mg Reaction; Neutron Displacement Damage; Bit Soft-error Cross Section; Zheng Liモデル; 電子捕獲中心; 照射効果ダイナミクス; 原子弾き出し; DT・DD中性子損傷相関係数; 荷電粒子輸

In order to examine the fusion neutron induced soft-error on memory ICs, several kinds of 1 Mbit CMOS SRAM ICs were irradiated with 14 MeV neutrons. Considering the cell population in the chip, we obtained the neutron susceptibility constant, i.e.bit soft-error cross section of 6-9*10^<-14> cm^2 for 1 Mbit CMOS SRAMs. This means that a soft-error is caused by neutron reactions in a limited region in a memory cell. The bit soft-error cross section value agreed roughly with that calculated by computer simulation with a Monte Carlo program based on the ion transport code TRIM-90 and the ENDF-B-VI neutron cross section data. Also we developed a special ion-beam apparatus for the examination of the soft-error mechanism.A silicon surface barrier detector (Si-SSD) was irradiated with neutrons from a deuteron accelerator. The leakage current increased proportionally with neutron fluence, which determined the neutron damage constant for the Si-SSD.The correlation factor of the DT and DD neutron damage in the Si-SSD was determined from the ratio of the DT and DD neutron damage constant and was found to be 2.3. We also calculated the rate of DT and DD neutron displacement damage for Si by using the TRIM-90 code and data on neutron reactions in the Si-SSD.The correlation factor of DT and DD neutron damage from the calculation agreed with that from the Si-SSD irradiation experiment.

为了研究聚变中子对存储器集成电路软错误的影响，用14 MeV中子辐照了几种1 Mbit CMOS SRAM集成电路。考虑到芯片中的单元数量，我们得到了中子敏感性常数，即1 Mbit CMOS SRAM的位软错误截面为6-9*10^<-14>cm ^2。这意味着软错误是由存储器单元中的有限区域中的中子反应引起的。位软误差截面值与根据离子输运程序TRIM-90和ENDF-B-VI中子截面数据用Monte Carlo程序进行计算机模拟计算的结果基本一致。我们还研制了一种用于软误差机理研究的专用离子束装置，用氘加速器产生的中子辐照硅表面势垒探测器（Si-SSD）。漏电流随中子注量成正比增加，这决定了Si SSD的中子损伤常数，由DT和DD中子损伤常数的比值确定了Si SSD中DT和DD中子损伤的相关因子为2.3。利用TRIM-90程序和Si SSD中的中子反应数据，计算了Si的DT和DD中子位移损伤率，计算得到的DT和DD中子损伤相关因子与Si SSD辐照实验结果一致。

项目成果

T.Iida,et al.: "Fusion Neutron Damage in Si Surface Barrier Detector" Proc.8th Workshop on Radiation Detectors. (1994)

T.Iida 等人：“硅表面势垒探测器中的聚变中子损伤”Proc.8th 辐射探测器研讨会。

Sunarno,T.Iida,et al.: "Soft-Error on CMOS SRAM ICs by Fusion Neutrons" IEEE Trans.on Nuclear Science. (1994)

Sunarno、T.Iida 等人：“聚变中子对 CMOS SRAM IC 造成的软错误”IEEE Trans.on Nuclear Science。

Sunarro,T.Iida,et al.: "Soft-error on Memory ICs Induced by D-T Neutrons" J.Nucl.Sci.Technol. 30. 107-115 (1993)

Sunarro,T.Iida,et al.：“D-T 中子引起的存储器 IC 上的软错误”J.Nucl.Sci.Technol。

Sunarno, T.Iida, J.Datemichi, H.Miyazaki and A.Takahashi: ""Soft-error on Memory ICs Induced by D-T Neutrons"" J.Nucl.Sci.Technol.30 [2]. 107-115 (1993)

Sunarno、T.Iida、J.Datemichi、H.Miyazaki 和 A.Takahashi：““D-T 中子引起的存储器 IC 上的软错误””J.Nucl.Sci.Technol.30 [2]。

Sunarno, T.Iida, Y.Tanimura, F.Satoh and A.Takahashi: ""Soft-Error on Static Random Access Memories Induced by D-T Neutrons"" Ionizing Radiation. 21 [4]. 75-89 (1995)

Sunarno、T.Iida、Y.Tanimura、F.Satoh 和 A.Takahashi：““D-T 中子引起的静态随机存取存储器的软错误””电离辐射。