Study on Radiation Damage Dynamics of Electrical Insulation Materials
电绝缘材料辐射损伤动力学研究
基本信息
- 批准号:10680489
- 负责人:
- 金额:$ 1.66万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:1998
- 资助国家:日本
- 起止时间:1998 至 1999
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
In order to examine the radiation induced conductivity (RIC) of electrical insulators, some sapphire samples (Kyocera) were irradiated at room temperature with DT neutrons and Co-60 gamma-rays. The radiation induced current of the sample was proportional to the neutron and gamma-ray flux. And the RIC coefficient of the sapphire was about 1×10ィイD1-10ィエD1/ Ω / m / Gy / s. There was not a large difference in the RIC coefficient between neutron and gamma-ray irradiatiuons. Moreover, unusual transient currents soon after irradiation, very small drift current and the offset characteristics of the sample were measured during irradiation. To explain these phenomena and to accurately evaluate the change in the electrical characteristics of irradiated ceramic insulators, we need further discussions on the electrical characteristics expected from numerical calculations of the Poissons equation based on a model of carrier transport in ceramics.
为了研究电绝缘体的辐射诱导电导率(RIC),用DT中子和Co-60伽马射线在室温下照射了一些蓝宝石样品(京瓷)。样品的辐射感应电流与中子和伽马射线通量成正比。和蓝宝石的RIC系数是1×10ィイD1-10ィエD1 /Ω/ m / Gy / s。里克没有很大差异系数中子和γ射线irradiatiuons之间。此外,在辐照过程中,测量到辐照后瞬时电流异常、漂移电流非常小以及样品的偏移特性。为了解释这些现象并准确地评估辐照陶瓷绝缘体电特性的变化,我们需要进一步讨论基于陶瓷中载流子输运模型的泊松方程的数值计算所期望的电特性。
项目成果
期刊论文数量(7)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
T. Tanaka & T. Iida: Proc. 13th Workshop on Radiation Detectors. 99・8. 27-36 (1999)
T. Tanaka 和 T. Iida:第 13 次辐射探测器研讨会。 99・8(1999)。
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- 影响因子:0
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T.Tanaka & T.Iida: "Response of CCD Image Sensor to Low Energy Ion Beam"Proc. 13th Workshop on Radiation Detectors and Their Uses. 99・8. 27-36 (1999)
T.Tanaka 和 T.Iida:“CCD 图像传感器对低能离子束的响应”Proc. 13th Workshop on Radiation Detector and Their Uses 99・8 (1999)。
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- 影响因子:0
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Y. Tamimura, T. Iida et al.: Nucl. Instrum. & Meth. In Phys. Res. A.. 443・2-3. 325-330 (2000)
Y. Tamimura,T. Iida 等:《核与方法》,A. 443·2-3。
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- 影响因子:0
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T.Nishitani,T.Iida,et al.: "Japanese contribution to ITER task of irradiation tests on diagnostic components" Fusion Engineering and Design. 42. 443-448 (1998)
T.Nishitani、T.Iida 等人:“日本对 ITER 诊断组件辐照测试任务的贡献”融合工程与设计。
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- 影响因子:0
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- 通讯作者:
Y.Tanimura,T.Iida et al.: "High-temperature Operation of a radiation detector made of a type II a diamonds single crystal synthesized by a HP/HT method"Nucl. Instrum. & Meth. in Phys. Res. A,. 443・2-3. 325-330 (2000)
Y.Tanimura、T.Iida 等人:“由 HP/HT 方法合成的 II 型金刚石单晶制成的辐射探测器”,《核与方法》。 ,443·2-3。
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IIDA Toshiyuki其他文献
Improvement of Low-Energy PIXE System for Precise Surface Analysis
用于精确表面分析的低能量 PIXE 系统的改进
- DOI:
- 发表时间:
2008 - 期刊:
- 影响因子:0
- 作者:
KADA Wataru;ISHIKAWA Ippei;KISHI Atsuya;IHARA Yohei;SATO Fuminobu;KATO Yushi;IIDA Toshiyuki - 通讯作者:
IIDA Toshiyuki
IIDA Toshiyuki的其他文献
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{{ truncateString('IIDA Toshiyuki', 18)}}的其他基金
Devel opment of Neuron Gircuit Fabrication Method with X-Ray Microbeam
X射线微束神经元回路制作方法的开发
- 批准号:
21360041 - 财政年份:2009
- 资助金额:
$ 1.66万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development of cell chip for examination of radiobiological damage
开发用于放射生物学损伤检查的细胞芯片
- 批准号:
21651021 - 财政年份:2009
- 资助金额:
$ 1.66万 - 项目类别:
Grant-in-Aid for Challenging Exploratory Research
Development of Neural Network Formation Technique using X-ray Micro Beams
利用X射线微束的神经网络形成技术的发展
- 批准号:
19360040 - 财政年份:2007
- 资助金额:
$ 1.66万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Study on Radiation-induced Conductivity of Insulation Materials under High Electric Field
高电场下绝缘材料辐射诱发电导率的研究
- 批准号:
12680510 - 财政年份:2000
- 资助金额:
$ 1.66万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Study on Neutron Damage Dynamics of Semiconductor Materials
半导体材料中子损伤动力学研究
- 批准号:
08680525 - 财政年份:1996
- 资助金额:
$ 1.66万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Study on Neutron Damage Dynamics of Semiconductor Crystal
半导体晶体中子损伤动力学研究
- 批准号:
06680469 - 财政年份:1994
- 资助金额:
$ 1.66万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
Study on Fusion-neutron Damage Dynamics of Semiconductor Materials
半导体材料聚变-中子损伤动力学研究
- 批准号:
05558068 - 财政年份:1993
- 资助金额:
$ 1.66万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
Study on Neutron Damage Dynamics of Highly Integrated Semiconductor Devices
高集成半导体器件中子损伤动力学研究
- 批准号:
04680229 - 财政年份:1992
- 资助金额:
$ 1.66万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
Studies on Radiation Response of Optical Fibers
光纤辐射响应的研究
- 批准号:
01580228 - 财政年份:1989
- 资助金额:
$ 1.66万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
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