Study on Radiation Damage Dynamics of Electrical Insulation Materials
Study on Radiation Damage Dynamics of Electrical Insulation Materials
批准号:
10680489
负责人:
IIDA Toshiyuki
金额:
$1.66万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1998
资助国家:
日本
项目状态:
已结题
起止时间:
1998 至 1999
中文摘要
按顺序测试电子绝缘剂的辐射诱导性(RIC),一些蓝宝石样品(Kyocera)在室内温度与DT中子和Co-60伽马射线的辐照。辐射诱导的样本电流对中子和伽马射线通量有很大的影响。And the RIC coefficient of the sapphire was about 1×10イD1-10エD1/\/ m / Gy / s.在中子和伽马射线辐照度之间,RIC协同效应并不存在很大的差异。Moreover,不寻常的瞬态电流很快就会出现辐射后的非常小的漂移电流和辐射期间的偏移特征。为了解释这些现象,并准确地评估辐射陶瓷绝缘体中的电特征学变化,我们需要对电特征学进行进一步的讨论,该讨论基于中毒方程的数字计算的载体传输模型。
英文摘要
In order to examine the radiation induced conductivity (RIC) of electrical insulators, some sapphire samples (Kyocera) were irradiated at room temperature with DT neutrons and Co-60 gamma-rays. The radiation induced current of the sample was proportional to the neutron and gamma-ray flux. And the RIC coefficient of the sapphire was about 1×10ィイD1-10ィエD1/ Ω / m / Gy / s. There was not a large difference in the RIC coefficient between neutron and gamma-ray irradiatiuons. Moreover, unusual transient currents soon after irradiation, very small drift current and the offset characteristics of the sample were measured during irradiation. To explain these phenomena and to accurately evaluate the change in the electrical characteristics of irradiated ceramic insulators, we need further discussions on the electrical characteristics expected from numerical calculations of the Poissons equation based on a model of carrier transport in ceramics.
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T. Tanaka & T. Iida: Proc. 13th Workshop on Radiation Detectors. 99・8. 27-36 (1999)
T. Tanaka 和 T. Iida:第 13 次辐射探测器研讨会。 99・8(1999)。
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T.Tanaka & T.Iida: "Response of CCD Image Sensor to Low Energy Ion Beam"Proc. 13th Workshop on Radiation Detectors and Their Uses. 99・8. 27-36 (1999)
T.Tanaka 和 T.Iida:“CCD 图像传感器对低能离子束的响应”Proc. 13th Workshop on Radiation Detector and Their Uses 99・8 (1999)。
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Y. Tamimura, T. Iida et al.: Nucl. Instrum. & Meth. In Phys. Res. A.. 443・2-3. 325-330 (2000)
Y. Tamimura,T. Iida 等:《核与方法》,A. 443·2-3。
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T.Nishitani,T.Iida,et al.: "Japanese contribution to ITER task of irradiation tests on diagnostic components" Fusion Engineering and Design. 42. 443-448 (1998)
T.Nishitani、T.Iida 等人:“日本对 ITER 诊断组件辐照测试任务的贡献”融合工程与设计。
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Y.Tanimura,T.Iida et al.: "High-temperature Operation of a radiation detector made of a type II a diamonds single crystal synthesized by a HP/HT method"Nucl. Instrum. & Meth. in Phys. Res. A,. 443・2-3. 325-330 (2000)
Y.Tanimura、T.Iida 等人:“由 HP/HT 方法合成的 II 型金刚石单晶制成的辐射探测器”,《核与方法》。 ,443·2-3。
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共 7 条
Devel opment of Neuron Gircuit Fabrication Method with X-Ray Microbeam
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批准号:21360041
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$11.73万
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财政年份:2009
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负责人:IIDA Toshiyuki
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依托单位:
Development of cell chip for examination of radiobiological damage
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批准号:21651021
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$1.59万
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财政年份:2009
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依托单位:
Development of Neural Network Formation Technique using X-ray Micro Beams
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批准号:19360040
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$11.48万
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财政年份:2007
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负责人:IIDA Toshiyuki
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依托单位:
Study on Radiation-induced Conductivity of Insulation Materials under High Electric Field
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批准号:12680510
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.6万
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财政年份:2000
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负责人:IIDA Toshiyuki
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依托单位:
Study on Neutron Damage Dynamics of Semiconductor Materials
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批准号:08680525
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.28万
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财政年份:1996
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负责人:IIDA Toshiyuki
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依托单位:
Study on Neutron Damage Dynamics of Semiconductor Crystal
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批准号:06680469
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.22万
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财政年份:1994
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负责人:IIDA Toshiyuki
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依托单位:
Study on Fusion-neutron Damage Dynamics of Semiconductor Materials
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批准号:05558068
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项目类别:Grant-in-Aid for Developmental Scientific Research (B)
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资助金额:$6.66万
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财政年份:1993
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负责人:IIDA Toshiyuki
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依托单位:
Study on Neutron Damage Dynamics of Highly Integrated Semiconductor Devices
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批准号:04680229
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.22万
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财政年份:1992
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负责人:IIDA Toshiyuki
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依托单位:
Studies on Radiation Response of Optical Fibers
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批准号:01580228
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.02万
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财政年份:1989
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负责人:IIDA Toshiyuki
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依托单位:
海外基金