Influence of Atmosphere on Ultrasonic Bonding of Silicon to Metal
Influence of Atmosphere on Ultrasonic Bonding of Silicon to Metal
批准号:
09650780
负责人:
KATO Hiroshi
金额:
$2.11万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1997
资助国家:
日本
项目状态:
已结题
起止时间:
1997 至 1998
中文摘要
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英文摘要
Ultrasonic bonding was carried out with some kinds of foil (Au, Ag, Al, Cu, Ni, Fe). In the case of similar metal bonding, good bonding was carried out. However, in the case of dissimilar metal bonding, only a few combination of metal foil enabled good bonding. The bonding of metal foil with Ag foil was very poor. Next, the bonding ability of metal foil to Si wafer was examined and good bonding was obtained with Au foil and Al foil. In the case of bonding of Si to Al foil, there was large scatter in bonding strength (shear strength). Since large scatter in strength of Si/Al foil bonding might be caused by oxide layer on the bonding face, Si and Al foil were immersed in acid and alkali to remove oxide layer. Namely, Si was immersed in HF water solution for 24 h, and Al foil was immersed in NaOH solution of different content (0 - 10 kmol/m_3) for different times (0 - 10 min). Immersion of Si in HF solution gave no influence on bonding character of Si to Al foil, but after immersion of Al … More foil in NaOH solution, minimum bonding strength increased at each bonding condition and scatter of bonding strength decreased. There was no clear influence of NaOH content in solution and immersion time on bonding character. Since many small holes were observed on the oxide layer of Al foil during immersion in NaOH solution through SEM, it was thought that the increase in bonding strength was caused by easy detachment of oxide layer from the surface of metal foil during ultrasonic vibration. Then, the ultrasonic bonding of Si to Al foil was done under a pressure of 2 Pa, but no increase in the strength and no decrease in scatter of the strength was obtained. Au film was formed on Si surface by spattering, and then the bonding of Au film to Al foil was done under air atmosphere. The bonding strength increased with increasing thickness of Au film. The fracture occurred at an interface between Au film and Si substrate, and the bonding strength was dependent on the strength of Au foil and the strength of Si/Al interface. From these results, it was expected that the bonding strength of Si/metal foil bonding increases through surface treatment of Si and metal surface. Less
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会议论文
加藤寛, 蔭山健介: "Ultrasonic Bonding of Silicon to Metal Foil and its Characterization" Proceedings of International Conference on Advanced Technology in Experimental Mechanics. 印刷中. (1999)
Hiroshi Kato、Kensuke Kageyama:“硅与金属箔的超声波粘合及其表征”实验力学先进技术国际会议论文集(1999 年)。
DOI:
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发表时间:
期刊:
影响因子:
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作者:
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通讯作者:
加藤 寛,蔭山健介: "Ultrasonic Bonding of Silicon to Metal Foil and its Characterization" Proceedings of International Conference on Advanced Technology in Experimental Mechanics. (発表予定). (1999)
Hiroshi Kato、Kensuke Kageyama:“硅与金属箔的超声波键合及其表征”实验力学先进技术国际会议论文集(待发表)。
DOI:
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发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
Hiroshi Kato and Kensuke Kageyama: "Ultrasonic Bonding of Silicon to Metal Foil and its Characterization" Proc.of Int.Conf.on Advanced Technology in Experimental Mechanics. (in press). (1999)
Hiroshi Kato 和 Kensuke Kageyama:“硅与金属箔的超声波键合及其表征”Proc.of Int.Conf.on Advanced Technology in Experimental Mechanics。
DOI:
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发表时间:
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影响因子:
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作者:
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通讯作者:
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