Photo-Induced Structural Change in Hydrogenated Amorphous Silicon
Photo-Induced Structural Change in Hydrogenated Amorphous Silicon
批准号:
09650357
负责人:
OKAMOTO Hiroaki
金额:
$2.3万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1997
资助国家:
日本
项目状态:
已结题
起止时间:
1997 至 1998
中文摘要
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英文摘要
Polarized electroabsorption (PEA) method has been used to study photo-induced structural changes in hydrogenated amorphous silicon.The field-modulated absorption consists of two components, one of which is the true polarization-dependent electroabsorption serving as an indicator of the structural disorder, and the other is the thermoabsorption originated in the temperature modulation due to Joule heating.The thermoabsorption component has to be removed from the observed field-modulated absorption signal to make an accurate and reliable evaluation of structural disorder in terms of the polarization dependence of the electroabsorption signals, since an increase in the sample resistance owing to the light-induced degradation should give a large impact on the magnitude of the thermoabsorption signal.The phase-separation procedure has been applied to deconvolute the observed field-modulated absorption signal into two components, leading to a result that about 15-25% of the observed signal a … More rises from the thermoabsorption effect for the Tauc gap region.Nevertheless, any essential alternation is not needed for our previous PEA result that the structural disorder is increased upon light-exposure.The internal stress as well as mass density have been measured to provide alternative evidences for the photo-induced structural change by the use of the bending-beam method and floatation method, respectively.It is found from these results that amorphous silicon films expand and the density tends to decrease upon light-exposure.The dynamics of the change in the PEA disorder, internal stress, mass density and metastable defect density under light exposure have been systematically investigated in order to resolve the essential link among them.The change in internal stress as well as mass density appears to be strongly dependent on the duration of light exposure pulse even through the accumulated exposure time is fixed, whereas such a peculiar behavior does not occur for the PEA disorder.The experimental findings lead us to an idea that the photo-induced increase in the net-work disorder shall result in an accumulation of the local net-work stress, and then a creation of metastable defects.The causality relation is formulated in the simplistic physical basis, which gives a clear-cut interpretation for the observed dynamics of the photo-induced structural change and creation of metastable defects in a semi-qualitative manner.If our new idea were true, then the removal of the photo-induced degradation should be established by interrupting the link ; increases in the new-work disorder, accumulation of local net-work stress, and creation & stabilization of metastable defects. Less
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服部公則: "Photomodulated electron-spin resonance in amorphous Silicon" J.Appl.Phys.84. 4974-4978 (1998)
Kiminori Hattori:“非晶硅中的光调制电子自旋共振”J.Appl.Phys.84 4974-4978 (1998)。
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通讯作者:
清水耕作: "Photo-induced Structural Changes in Hydrogenated Amorphous Silicon" Material Research Society Symposium Proceedings of Amorphous Silicon Technology-1998. (in press).
Kousaku Shimizu:“氢化非晶硅中的光致结构变化”材料研究学会非晶硅技术研讨会论文集 - 1998(印刷中)。
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通讯作者:
K.Shimizu, T.Tabuchi, K.Hattori, H.Kida and H.Okamoto: ""Photo-induced Structural Changs in Hydrogenated Amorphous Silicon"" Material Research Society Symposium Proceedings of Amorphous Silicon Technology-1998, California. (in press.). (1998)
K.Shimizu、T.Tabuchi、K.Hattori、H.Kida 和 H.Okamoto:“氢化非晶硅中的光致结构变化””材料研究学会非晶硅技术研讨会论文集 - 1998 年,加利福尼亚州。
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H.Okamoto: ""Optical Absorption Spectrum of Amorphous Semiconductors" (in Japanese.)" Solid State Phys.32. 63-68 (1997)
H.Okamoto:““非晶半导体的光学吸收光谱”(日文)”固态物理.32。
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清水耕作: "Photo-induced Structural Change and defect creation in Hydrogenated Amorphous Silicon" J.Non-Cryst.Solids. 227-230. 267-271 (1997)
Kousaku Shimizu:“氢化非晶硅中的光致结构变化和缺陷产生”J.Non-Cryst.Solids 227-230 (1997)。
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共 15 条
Research on release mechanism, genome mutations and cellular receptor of hepatitis E virus (HEV) using cell culture systems for HEV
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批准号:22390090
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$11.73万
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财政年份:2010
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负责人:OKAMOTO Hiroaki
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Genomic and proteomic characterizations of the central nervous system tumors
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Characterization of hepatitis E virus (HEV) particles and analysis of replication mechanism by using a cell culture system for HEV
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批准号:19390134
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Molecular epidemiological analysis of hepatitis E as a zoonosis and investigation toward its prevention
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财政年份:2004
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负责人:OKAMOTO Hiroaki
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Study of Light Induced Effects on the Carrier Transport Property in Amorphous Silicon
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批准号:13650345
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项目类别:Grant-in-Aid for Scientific Research (C)
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Development of genotyping method for TT virus (TTV) and its application to elucidation of pathogenesis.
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批准号:13357003
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Analysis of replication and transcription mechanisms in a newly discovered circular, single-stranded DNA virus (TTV)
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批准号:13470067
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资助金额:$6.85万
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财政年份:2001
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依托单位:
Study of Light-induced Structural Change in Hydrogenated Amorphous Silicon by the Glancing-angle Polarized Electroabsorption Technique
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批准号:11650325
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.18万
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财政年份:1999
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负责人:OKAMOTO Hiroaki
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A Study of Noise Reducing by Reform on Road Surface for Concrete Pavement
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批准号:10555150
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$4.29万
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负责人:OKAMOTO Hiroaki
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依托单位:
ANALYSIS OF GENOMIC STRUCTURE OF HEPATITIS G VIRUS (GBV-C/HGV) AND DEVELOPMENT OF SENSITIVE DETECTION SYSTEM OF THE VIRAL GENOME
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Study of Carrier Transport Property in Amorphous Semiconductors by Light Excited Hall effect
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批准号:07650376
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资助金额:$1.34万
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PURIFICATION OF HEPATITIS C VIRUS PARTICLES AND ANALYSIS OF ITS STRUCTURAL PROTEINS
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依托单位:
Characterization of Sturctural Disorder by means of Polarized Photoreflectance in Amorphous Semiconductors
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资助金额:$1.34万
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财政年份:1993
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负责人:OKAMOTO Hiroaki
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依托单位:
"Fundamental Research on Amorphous Silicon Photosensor with Internal Multiplication Function"
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批准号:03650325
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负责人:OKAMOTO Hiroaki
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Development of amorphous SiC light emitting diodes
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负责人:OKAMOTO Hiroaki
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海外基金