Study of Light Induced Effects on the Carrier Transport Property in Amorphous Silicon

光致对非晶硅载流子传输性能影响的研究

基本信息

  • 批准号:
    13650345
  • 负责人:
  • 金额:
    $ 2.5万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 财政年份:
    2001
  • 资助国家:
    日本
  • 起止时间:
    2001 至 2002
  • 项目状态:
    已结题

项目摘要

The frequency dependent (ac) conductivity being characteristic to disordered solids has been long a subject of great interest, and argued from both the microscopic and macroscopic pictures of various conduction systems. Recent experimental studies have revealed an existence of "universal" frequency-scaling of the normalized ac conductivity, that is found to be well reproduced theoretically for extremely disordered system in which hopping charge conduction via strongly localized/bound sites is predominant. What is excluded in these discussions is the ac electronic conductivity near the mobility edge in amorphous semiconductors which is likely to exhibit similar scaling feature. The aim of this work is, then, to pursue the universal ac scaling for the mobility edge electronic conductivity as well as to infer to the information to be extracted from the measurements, especially the light induced effects on the band-edge carrier transport. Frequency and temperature dependent electronic conduction near the mobility edge is investigated on the basis of the renormalization group treatment for weak localization problems. The ac conductivity normalized by its dc counterpart is found to follow a simple universality equation being quite similar to that obeyed in common for various different hopping conduction systems. The theoretical results have been applied to the experimental data sets acquired on the ac conductivity of hydrogenated amorphous silicon in the well-annealed and light-soaked states, indicating that the the energy width of the conduction band edge localized states is not changed by light-soaing, and stays at aroud 100 meV.
无序固体的频率相关电导率一直是人们感兴趣的课题,并从各种导电系统的微观和宏观图像中进行了论证。最近的实验研究表明,存在着“通用”的频率标度的归一化交流电导率,这是发现,以及在理论上再现的极其无序的系统,其中跳跃电荷传导通过强烈的本地化/绑定网站是占主导地位的。在这些讨论中排除的是在非晶半导体中的迁移率边缘附近的交流电子电导率,这可能表现出类似的标度特征。这项工作的目的是,然后,追求通用的交流缩放的迁移率边缘的电子电导率,以及推断的信息要从测量中提取,特别是光诱导效应的带边载流子输运。基于弱局域化问题的重整化群处理方法,研究了迁移率边附近的频率和温度依赖的电子传导。由其直流对应归一化的交流电导率被发现遵循一个简单的普适性方程是非常相似的服从共同为各种不同的跳跃传导系统。将理论结果应用于氢化非晶硅在退火态和光浸泡态交流电导的实验数据,结果表明光浸泡并不改变导带边局域态的能量宽度,导带边局域态的能量宽度保持在100 meV左右。

项目成果

期刊论文数量(3)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
岡本博明: "Microstructural Dependence of Electron and Hole Transportin Low-Temperature-Grown Polycrystalline-Silicon Thin-Film Solar Cells"Appl. Phys. Letts. 81. 4751-4753 (2002)
Hiroaki Okamoto:“低温生长的多晶硅薄膜太阳能电池中电子和空穴传输的微观结构依赖性”快报 81。4751-4753 (2002)
  • DOI:
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    0
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  • 通讯作者:
H. Okamoto and K Hattori:: "Universal Frequency Dependent Electrical Conductiviy near the Mobility Edge"J. Non-Cryst. Solids. 299-302. 346-349 (2002)
H. Okamoto 和 K Hattori:“移动边缘附近的通用频率相关电导率”J。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
岡本 博明: "universal Frequeney Dependent Electrical Conductivity near The Mobility Edge"J. Non-Crystalline Solids. (掲載予定). (2002)
Hiroaki Okamoto:“移动性边缘附近的通用频率相关电导率”J。
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OKAMOTO Hiroaki其他文献

OKAMOTO Hiroaki的其他文献

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{{ truncateString('OKAMOTO Hiroaki', 18)}}的其他基金

Research on release mechanism, genome mutations and cellular receptor of hepatitis E virus (HEV) using cell culture systems for HEV
利用戊型肝炎病毒(HEV)细胞培养系统研究戊型肝炎病毒(HEV)的释放机制、基因组突变和细胞受体
  • 批准号:
    22390090
  • 财政年份:
    2010
  • 资助金额:
    $ 2.5万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Genomic and proteomic characterizations of the central nervous system tumors
中枢神经系统肿瘤的基因组和蛋白质组特征
  • 批准号:
    19791003
  • 财政年份:
    2007
  • 资助金额:
    $ 2.5万
  • 项目类别:
    Grant-in-Aid for Young Scientists (B)
Characterization of hepatitis E virus (HEV) particles and analysis of replication mechanism by using a cell culture system for HEV
使用 HEV 细胞培养系统表征戊型肝炎病毒 (HEV) 颗粒并分析复制机制
  • 批准号:
    19390134
  • 财政年份:
    2007
  • 资助金额:
    $ 2.5万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Molecular epidemiological analysis of hepatitis E as a zoonosis and investigation toward its prevention
人畜共患病戊型肝炎的分子流行病学分析及预防研究
  • 批准号:
    16390137
  • 财政年份:
    2004
  • 资助金额:
    $ 2.5万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of genotyping method for TT virus (TTV) and its application to elucidation of pathogenesis.
TT病毒(TTV)基因分型方法的开发及其在阐明发病机制中的应用。
  • 批准号:
    13357003
  • 财政年份:
    2001
  • 资助金额:
    $ 2.5万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Analysis of replication and transcription mechanisms in a newly discovered circular, single-stranded DNA virus (TTV)
分析新发现的环状单链 DNA 病毒 (TTV) 的复制和转录机制
  • 批准号:
    13470067
  • 财政年份:
    2001
  • 资助金额:
    $ 2.5万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Study of Light-induced Structural Change in Hydrogenated Amorphous Silicon by the Glancing-angle Polarized Electroabsorption Technique
掠射角偏振电吸收技术研究氢化非晶硅光致结构变化
  • 批准号:
    11650325
  • 财政年份:
    1999
  • 资助金额:
    $ 2.5万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
A Study of Noise Reducing by Reform on Road Surface for Concrete Pavement
混凝土路面路面改造降噪研究
  • 批准号:
    10555150
  • 财政年份:
    1998
  • 资助金额:
    $ 2.5万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B).
Photo-Induced Structural Change in Hydrogenated Amorphous Silicon
氢化非晶硅的光致结构变化
  • 批准号:
    09650357
  • 财政年份:
    1997
  • 资助金额:
    $ 2.5万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
ANALYSIS OF GENOMIC STRUCTURE OF HEPATITIS G VIRUS (GBV-C/HGV) AND DEVELOPMENT OF SENSITIVE DETECTION SYSTEM OF THE VIRAL GENOME
庚型肝炎病毒(GBV-C/HGV)基因组结构分析及病毒基因组灵敏检测系统的开发
  • 批准号:
    09470087
  • 财政年份:
    1997
  • 资助金额:
    $ 2.5万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B).

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    2023
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Elucidation of Carrier Transport in Silicon Carbide MOSFETs and Demonstration of Integrated Circuits Operating at High Temperatures
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    23KJ1387
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    2023
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Investigation of Carrier Transport Process in Undulated Superlattice and Development of High Carrier Density Solar Cells for Hydrogen Production
起伏超晶格中载流子输运过程的研究及高载流子密度制氢太阳能电池的开发
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    22KJ0955
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Formation of carrier transport layer on textured substrates and its application to perovskite solar cells
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    23K03921
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    2023
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Efficient carrier transport in organic semiconductors through molecular orbital overlap engineering
通过分子轨道重叠工程实现有机​​半导体中的高效载流子传输
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    22H01933
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Elucidating carrier transport mechanism in disordered amorphous oxide semiconductors to realize flexible fully solution processed oxide transistors
阐明无序非晶氧化物半导体中的载流子传输机制,以实现灵活的全溶液处理氧化物晶体管
  • 批准号:
    22K14291
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    2022
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    $ 2.5万
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    Grant-in-Aid for Early-Career Scientists
Study on High Field Carrier Transport in Gallium Nitride
氮化镓高场载流子输运研究
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    22K20423
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    2022
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Understanding carrier transport properties of ultra-thin semiconductor channel CMOS and establishing a method to enhance channel mobility
了解超薄半导体沟道CMOS的载流子传输特性并建立增强沟道迁移率的方法
  • 批准号:
    22H00208
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