High Speed InP Schottky Power Rectifier

设计了高速InP肖特基功率整流器的优化结构。采用新型原位电化学工艺制备了InP肖特基功率整流器。结果总结如下。1) InP肖特基功率整流器的整流效率与最大工作频率相权衡。对InP肖特基功率整流器进行了结构优化设计。例如，要制造阻塞电压为40V，效率在90%以上的InP肖特基功率整流器，必须设计InP外延基基板的参数如下：n-InP外延层的厚度和给体密度分别为0.2um和3 × 10^<16>/cm^3。，则最大工作频率为10MHz。2)为了在n^+-InP上形成欧姆接触，我们研究了接触电阻、金属材料和热处理之间的关系。结果表明，在（375C,5min） Ni/AuGe/n^+-InP体系中，Ni/AuGe/n^+-InP体系的接触电阻较小，可用于InP肖特基功率整流器。3)采用新型原位电化学工艺制备lnP肖特基整流二极管。由于肖特基二极管界面处的费米能级钉住减小，肖特基势垒高度可以在0.35 ~ 0.86 eV的范围内变化，这取决于金属材料。

The optimal structure of high speed InP Schottky power rectifier was designed. InP Schottky power rectifier was fabricated by Novel In-Situ Electrochemical process. Summary of the results is given as following.1) The rectification efficiency of InP Schottky power rectifier trades off the maximum operating frequency. Structure of the InP Schottky power rectifier was designed optimally. For example, to fabricate an InP Schottky power rectifier with a blocking voltage of 40V and efficiency of above 90%, the parameter of the InP epi-substrata must be designed as following. The thickness and donor density of n-InP epi-layer are 0.2um and 3x10^<16>/cm^3. respectively, Such the maximum operating frequency is obtained to be 10MHz.2)To form an ohmic contact on n^+-InP, we have investigated the correlation between contact resistance, metal materials, and heat treatment. We found that the contact resistance of annealing (375C,5min) Ni/AuGe/n^+-InP system is small and It was used in InP Schottky power rectifier.3) lnP Schottky rectifier diode was fabricated by Novel In-Situ Electrochemical process. An oxide-free, nearly ideal thermionic emission characteristics of the diode were obtained, Because the Fermi-level pinning at the Schottky diode interfaces was reduced, the Schottky barrier height can change over a wide range from 0.35 to 0.86 eV, depending on the metal material.