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High Speed InP Schottky Power Rectifier

高速 InP 肖特基功率整流器

基本信息

批准号：
09555105
负责人：
WU Nan-Jian
金额：
$ 4.35万
依托单位：
The University of Electro-Communications (1998)Hokkaido University (1997)
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1998
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09555105/
关键词：
InP Schottky Diode High Speed Switching

项目摘要

The optimal structure of high speed InP Schottky power rectifier was designed. InP Schottky power rectifier was fabricated by Novel In-Situ Electrochemical process. Summary of the results is given as following.1) The rectification efficiency of InP Schottky power rectifier trades off the maximum operating frequency. Structure of the InP Schottky power rectifier was designed optimally. For example, to fabricate an InP Schottky power rectifier with a blocking voltage of 40V and efficiency of above 90%, the parameter of the InP epi-substrata must be designed as following. The thickness and donor density of n-InP epi-layer are 0.2um and 3x10^<16>/cm^3. respectively, Such the maximum operating frequency is obtained to be 10MHz.2)To form an ohmic contact on n^+-InP, we have investigated the correlation between contact resistance, metal materials, and heat treatment. We found that the contact resistance of annealing (375C,5min) Ni/AuGe/n^+-InP system is small and It was used in InP Schottky power rectifier.3) lnP Schottky rectifier diode was fabricated by Novel In-Situ Electrochemical process. An oxide-free, nearly ideal thermionic emission characteristics of the diode were obtained, Because the Fermi-level pinning at the Schottky diode interfaces was reduced, the Schottky barrier height can change over a wide range from 0.35 to 0.86 eV, depending on the metal material.

设计了高速InP肖特基功率整流电路的优化结构。采用新型原位电化学工艺制备了InP肖特基功率整流器件。研究结果总结如下：1)InP肖特基功率整流器的整流效率在最大工作频率之间进行了权衡。对InP肖特基功率整流器的结构进行了优化设计。例如，要制作出阻断电压为40V、效率在90%以上的InP肖特基功率整流器，InP外延衬底的参数必须设计如下。N-InP外延层的厚度和施主密度分别为0.2um和3×10~(-1)/cm~3，最大工作频率为10 MHz。2)为了在n~+-InP上形成欧姆接触，我们研究了接触电阻、金属材料和热处理之间的关系。我们发现(375C，5min)退火后的Ni/AuGe/n^+-InP系统的接触电阻很小，可用于InP肖特基功率整流。3)采用新型的原位电化学工艺制备了LNP肖特基整流二极管。由于肖特基二极管界面处的费米能级钉扎减少，肖特基势垒高度可以在0.35-0.86 eV的较大范围内变化，这取决于金属材料，因此获得了无氧化物的、近乎理想的二极管热电子发射特性。