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Study of basic technology for System-on-Glass

玻璃系统基础技术研究

基本信息

批准号：
09555109
负责人：
MATSUMURA Masakiyo
金额：
$ 7.74万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1999
项目状态：
已结题

项目摘要

We have speculated that dominant origin of small grains for the conventional excimer-laser annealing. (ELA) of Si thin-films is of collision of grain that start growing uniformly over the Si thin-films at the same time. We have developed a novel ELA method named as "Gradient method" that can grow large grains by solving an above-mentioned collision problem. Furthermore,. we have developed an improved method named "Phase-Modulated ELA method", to control well the light intensity distribution, by using interference effects of laser light. Grown grains was 100 times as large as the conventional ones, and repeatability was improved dramatically. And relations have been examined experimentally between grain size and light intensity distribution, average light intensity, sample temperature, surface passivation layer and so on. Mask design methodology, conditions of optical system for large grain growth and practical method using projection concepts are also investigated. Another lateral grow … More th technology has been invented where uniform excimer-laser light irradiates the sample of Si disk formed on the light absorption layer. Large grains can be grown by lateral diffusion of heat from the light absorption layer outside the Si disk.The fact that we can grow large grains at the pre-designed position means that we can make grain boundary at the pre-designed position. Based on this fact we have proposed a novel thin-film transistor structure where only one grain boundary is running at the center of the channel. Since the high field drain region exists in a single grain of good crystallinity, leakage is expected low. Since carriers cross only one the potential barrier formed at grain boundary, the field effect mobility is expected high. Grain boundary at the center of the channel can effectively kill holes by recombination, which results in a few kink effects. As a results superior performances are expected in these devices. We have fabricated this device by using PMELA method, and verified their superior performance. Less

我们推测传统准分子激光退火中小晶粒的主要来源。 Si薄膜的ELA（ELA）是同时开始在Si薄膜上均匀生长的晶粒的碰撞。我们开发了一种名为“梯度法”的新型ELA方法，可以通过解决上述碰撞问题来生长大晶粒。此外，。我们开发了一种改进的方法，称为“相位调制ELA方法”，利用激光的干涉效应来很好地控制光强分布。生长的颗粒比传统颗粒大 100 倍，并且重复性显着提高。并通过实验考察了晶粒尺寸与光强分布、平均光强、样品温度、表面钝化层等的关系。还研究了掩模设计方法、大晶粒生长的光学系统条件以及使用投影概念的实用方法。另一种横向生长技术已被发明，其中均匀的准分子激光照射在光吸收层上形成的硅盘样品。大晶粒可以通过硅盘外部光吸收层的热量横向扩散来生长。我们可以在预先设计的位置生长大晶粒，这意味着我们可以在预先设计的位置形成晶界。基于这一事实，我们提出了一种新型薄膜晶体管结构，其中沟道中心只有一个晶界。由于高场漏区存在于结晶度良好的单个晶粒中，因此预计漏电较低。由于载流子仅穿过晶界处形成的势垒，因此预计场效应迁移率较高。通道中心的晶界可以通过复合有效地消除空穴，从而产生一些扭结效应。因此，这些设备有望实现卓越的性能。我们采用PMELA方法制作了该器件，并验证了其优越的性能。较少的