Study of basic technology for System-on-Glass
Study of basic technology for System-on-Glass
批准号:
09555109
负责人:
MATSUMURA Masakiyo
金额:
$7.74万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1997
资助国家:
日本
项目状态:
已结题
起止时间:
1997 至 1999
中文摘要
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英文摘要
We have speculated that dominant origin of small grains for the conventional excimer-laser annealing. (ELA) of Si thin-films is of collision of grain that start growing uniformly over the Si thin-films at the same time. We have developed a novel ELA method named as "Gradient method" that can grow large grains by solving an above-mentioned collision problem. Furthermore,. we have developed an improved method named "Phase-Modulated ELA method", to control well the light intensity distribution, by using interference effects of laser light. Grown grains was 100 times as large as the conventional ones, and repeatability was improved dramatically. And relations have been examined experimentally between grain size and light intensity distribution, average light intensity, sample temperature, surface passivation layer and so on. Mask design methodology, conditions of optical system for large grain growth and practical method using projection concepts are also investigated. Another lateral grow … More th technology has been invented where uniform excimer-laser light irradiates the sample of Si disk formed on the light absorption layer. Large grains can be grown by lateral diffusion of heat from the light absorption layer outside the Si disk.The fact that we can grow large grains at the pre-designed position means that we can make grain boundary at the pre-designed position. Based on this fact we have proposed a novel thin-film transistor structure where only one grain boundary is running at the center of the channel. Since the high field drain region exists in a single grain of good crystallinity, leakage is expected low. Since carriers cross only one the potential barrier formed at grain boundary, the field effect mobility is expected high. Grain boundary at the center of the channel can effectively kill holes by recombination, which results in a few kink effects. As a results superior performances are expected in these devices. We have fabricated this device by using PMELA method, and verified their superior performance. Less
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石川,小沢,松村: "Exiciner-Laser Induced Laterol-Grair Grouth" Jpn.J.Appl.Phys.37・4. 731-736 (1998)
石川、小泽、松村:“Exiciner-Laser Induced Laterol-Grair Groth”Jpn.J.Appl.Phys.37・4(1998)。
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通讯作者:
M.Ozawa 他: "2-D Position-Controlled Excimer-Laser Crystallization"38. 5700-5706 (1999)
M.Ozawa 等人:“二维位置控制准分子激光结晶”38 5700-5706 (1999)。
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M. Ozawa et al.: "Two-Dimensionally Position Controled Excimer-Laser Crystallization"Jpn. J. Appl. Phys.. Vol. 38. 5700-5706 (1999)
M. Ozawa 等:“二维位置控制准分子激光结晶”Jpn。
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石原, 松村: "Excimer-Laser-Produced C-Si Thin-Film Trarsistrs" Jpn J.Appl.Phys. 36.10. 6167-6170 (1997)
Ishihara, Matsumura:“准分子激光生产的 C-Si 薄膜晶体管”Jpn J.Appl.Phys 36.10 (1997)。
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M. Matsumura et al.: "Advance Excimer-Laser Annealing Process"Thin Solid Films. Vol. 337. 123-130 (1999)
M. Matsumura 等人:“高级准分子激光退火工艺”固体薄膜。
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共 9 条
Study of Si/Ge Strain-Controlled Atomic-Laver Super-Lattices
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批准号:10305003
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项目类别:Grant-in-Aid for Scientific Research (A).
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资助金额:$25.28万
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财政年份:1998
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负责人:MATSUMURA Masakiyo
-
依托单位:
Preparation and Characterization of Si-based Manmade Crystals
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批准号:07405001
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$17.92万
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财政年份:1995
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负责人:MATSUMURA Masakiyo
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依托单位:
Research of High-Efficiency Silicon-Based Light-Emitting Devices
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批准号:04555085
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项目类别:Grant-in-Aid for Developmental Scientific Research (B)
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资助金额:$10.5万
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财政年份:1992
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负责人:MATSUMURA Masakiyo
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依托单位:
Atomic-Layr-Epitaxy of Group VI Semiconductors Using Ultra-Activ Gas
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批准号:04452171
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.42万
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财政年份:1992
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负责人:MATSUMURA Masakiyo
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依托单位:
Investigation of Behaviours of Electrons in Ultra-thin Amorphous Silicon Layer and their Device Applications
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批准号:60460061
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.93万
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财政年份:1985
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负责人:MATSUMURA Masakiyo
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依托单位:
Fabrication of High-Speed Amorphous-Silicon Integrated Circuits
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批准号:59850062
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项目类别:Grant-in-Aid for Developmental Scientific Research
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资助金额:$4.54万
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财政年份:1984
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负责人:MATSUMURA Masakiyo
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依托单位:
海外基金