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Decontamination Process by High Density Active Atoms in An Atmosheric-Pressure Plasma

大气压等离子体中高密度活性原子的净化过程

基本信息

批准号：
09480097
负责人：
SUZUKI Masaaki
金额：
$ 5.12万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1998
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09480097/
关键词：
Decontamination Etching Plasma process

项目摘要

A special feature of our microwave heated plasma generator has been shown as a source of high concentration reactive atoms in the discharge of molecular gases. The mixed feed gas which is consists of CF_4 arid O_2 and flow rates was used for decontamibnation experiments, considering the stability of microwave discharge and the efficiency of radical generation into account And also the input power of microwave about 1.5 kW was chosen. As the substance which is decontaminated cobbalt oxide was used. Some drops of the solution of cobalt nitride with known concentration was dropped on a sample stainless steal plate (SUS304). After the weight drops was measured precisely, the plate was heated up to 500 。C and maintained at the same temp earature during 1 hour. Thus the black colored spot of cobalt oxide stained on the plate. For the measurements of cobalt ICP was used after dissolved into HCl solution. As a result, cobalt can be removed from the surface almost -100% at 250 seconds of decontamination time. Obtained decontamination efficiency is higher than reference value in the cobalt decontamination experiments which was carried out in low pressure. Also thermody namic modelling calculation was carried out for other elements, namely, Lanthanide (La, Gd) and Actinide (U,Pu) and the possibility of this application was described. From these results it was concluded that the method which we suggested is very powerful and has a large potential for practical use.

我们的微波加热等离子体发生器的一个特点已被证明是在分子气体放电中高浓度反应原子的来源。在考虑微波放电稳定性和自由基生成效率的情况下，采用CF_4和O_2的混合原料气进行除污实验，微波输入功率约为1.5 kW。采用氧化钴作为净化物质。将已知浓度的氮化钴溶液滴在不锈钢板（SUS304）上。在精确测量重量下降后，将板加热到500度。在相同的温度下保持1小时。于是，氧化钴的黑色斑点就沾染在底片上了。钴的测定采用溶解于HCl溶液后的ICP法。因此，在250秒的净化时间内，钴几乎可以从表面100%去除。在低压条件下进行的钴净化实验中，得到的净化效率高于参考值。对其他元素，即镧系元素（La, Gd）和锕系元素（U,Pu）也进行了热力学模拟计算，并描述了这种应用的可能性。从这些结果可以得出结论，我们提出的方法是非常强大的，具有很大的实际应用潜力。