Low-noise platform for in situ structural and electrical characterization by sub-Ångstrøm low-voltage transmission electron microscopy (SALVE IV)

通过亚埃级低压透射电子显微镜 (SALVE IV) 进行原位结构和电学表征的低噪声平台

• 批准号: 89228805
• 负责人: Professorin Dr. Ute Kaiser
• 金额: --
• 依托单位: Zentrale Einrichtung Elektronenmikroskopie
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2009
• 资助国家: 德国
• 起止时间: 2008-12-31 至 2013-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/89228805?language=en
• 关键词: Low; noise; platform; situ; structural

This project is intended to develop a low-noise platform for investigating beam-sensitive samples at sub-Ångstrøm resolution using low-voltage transmission electron microscopy, enabling simultaneous imaging and in situ variation of the electrical bias applied to the specimen. By means of the focused ion-beam (FIB) technique, submicrometer-sized slits will be cut in silicon nitride membranes and then covered by single-layer sheets of graphene, yielding a weakly scattering, perfectly crystalline sample support whose signal can be removed from the TEM image by Fourier filtering. Metallic microcontacts will be added to the platform by lithography, and the remaining gap to the sample will be bridged by nanowires deposited by FIB, thereby making it possible to pass electrical current through a specimen during observation in the TEM. This capability will be exploited to study (i) the influence of lattice defects and/or adsorbates on the electrical conductivity of graphene and (ii) the structure and electrical properties of ultrathin layers of semiconductors like GaN and AlN.

该项目旨在开发一个低噪声平台，用于使用低电压透射电子显微镜以亚微米分辨率研究光束敏感样品，从而实现同时成像和施加到样品上的电偏压的原位变化。通过聚焦离子束（FIB）技术，亚微米大小的狭缝将在氮化硅膜上切割，然后用单层石墨烯片覆盖，产生弱散射，完美结晶的样品支撑物，其信号可以通过傅立叶滤波从TEM图像中去除。金属微触点将通过光刻添加到平台上，剩余的间隙将由FIB沉积的纳米线桥接，从而使得在TEM中观察期间可以使电流通过样品。这种能力将被用来研究（i）晶格缺陷和/或吸附物对石墨烯导电性的影响，以及（ii）GaN和AlN等半导体的外延层的结构和电学性质。