Developing machining technologies for single crystal gallium oxide
Developing machining technologies for single crystal gallium oxide
批准号:
DP180103275
负责人:
Prof Han Huang
金额:
$21.15万
依托单位国家:
澳大利亚
项目类别:
Discovery Projects
财政年份:
2018
资助国家:
澳大利亚
项目状态:
已结题
起止时间:
2018-01-01 至 2022-06-30
中文摘要
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英文摘要
Gallium oxide is a new semiconductor material that can be used to make diodes and transistors with lower loss than silicon (Si), and power electronic devices with lower cost and better performance than silicon carbide (SiC) and gallium nitride (GaN). This project aims to understand the nature of deformation and removal of this unique class of materials during machining. A successful outcome will not only develop an enabling machining technology for this next generation power semiconductor, but new understanding of machining and materials science will be generated.
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