Developing machining technologies for single crystal gallium oxide

开发单晶氧化镓加工技术

• 批准号: DP180103275
• 负责人: Prof Han Huang
• 金额: $ 21.15万
• 依托单位: The University of Queensland
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Projects
• 财政年份: 2018
• 资助国家: 澳大利亚
• 起止时间: 2018-01-01 至 2022-06-30
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DP180103275
• 关键词: Developing; machining; technologies; single; crystal

Gallium oxide is a new semiconductor material that can be used to make diodes and transistors with lower loss than silicon (Si), and power electronic devices with lower cost and better performance than silicon carbide (SiC) and gallium nitride (GaN). This project aims to understand the nature of deformation and removal of this unique class of materials during machining. A successful outcome will not only develop an enabling machining technology for this next generation power semiconductor, but new understanding of machining and materials science will be generated.

氧化镓是一种新型半导体材料，可以用来制造比硅(Si)更低的二极管和晶体管，以及比碳化硅(SiC)和氮化镓(GaN)更低的成本和更好的性能的电力电子器件。本项目旨在了解加工过程中这类独特材料的变形和去除的本质。一个成功的结果不仅将为这种下一代功率半导体开发一种使能加工技术，而且将产生对机械加工和材料科学的新理解。