Nitrides for the 21st century
Nitrides for the 21st century
批准号:
EP/H019324/1
负责人:
Colin Humphreys
金额:
$105.31万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2009
资助国家:
英国
项目状态:
已结题
起止时间:
2009 至 --
中文摘要
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英文摘要
Our research has the potential to save millions of lives, save energy, save carbon emissions and enable totally secure communications. It is based on gallium nitride, which is probably the most important new semiconductor since silicon. Unlike silicon, gallium nitride emits brilliant light when a small electric current is passed through it. We can produce light of any colour (for example blue, green, yellow, red) by adding more and more indium to gallium nitride. On the other hand, if we add aluminium to gallium nitride we can produce ultra-violet light. Gallium nitride based light emitting diodes (LEDs) and laser diodes are already in widespread use, for example as LED traffic lights and as Blu-ray laser diodes for the latest DVD players. If we coat a blue LED with a yellow-emitting phosphor then a cool white light is produced, and such white LEDs are used as front bicycle lights, flashlights, backlighting for mobile phones, etc,The aim of this Platform Grant is to underpin our research in a number of key areas. Gallium nitride produces light so efficiently that if we could use white gallium nitride based LEDs for home and office lighting we could save 15% of all electricity used, reduce carbon emissions from power stations by 15% and close eight large power stations. However, high-power white LEDs are too expensive for home and office lighting, and the quality of the white light is too poor to be acceptable. Gallium nitride based LEDs are currently grown on two-inch diameter sapphire wafers. We are developing their growth on six-inch silicon wafers. If successful, this will reduce the cost of each LED by a factor of ten, which will make white LEDs cheap enough for home and office lighting. Some challenging new science in required for this, but we are world leading in this research. We are also planning to produce high quality white light, like natural sunlight, by developing new green and red phosphors, and we will tailor the wavelength of our LEDs to maximise the excitation of these new phosphors. We also plan to eliminate phosphors totally, which will further improve the efficiency, and produce white light by mixing blue, green, yellow and red LEDs. Currently green and yellow LEDs have relatively poor efficiency, for reasons which are not totally clear, and we plan to solve this problem. Solving both the problems of cost and quality will yield low-cost high-efficiency high-quality lighting for our homes and offices, with the substantial energy and carbon savings referred to above.Deep ultra-violet radiation stops bacteria and viruses from reproducing and hence essentially kills them. Aluminium gallium nitride LEDs at present emit in the deep-UV, but their efficiency is too low to be useful. We propose to make highly-efficient LEDs emitting in the deep-UV. These could be used to purify drinking water in the developing world. Over one billion people in the world do not have access to drinkable water, and drinking impure water kills more people in the world than AIDS. Our research could lead to literally millions of lives being saved. The LEDs operate at typically 4 Volts and so can be powered by solar cells, ideal for the developing world. Additionally such deep-UV LEDs could be used in a flashlight to shine on hospital walls, floors and bedding to kill superbugs.We plan to develop a novel gallium nitride based light source called a single photon emitter, which emits a single photon on demand. This would be used for sending totally secure messages. For example a mobile phone, with a single photon emitter, could send a message to a cash machine for you to obtain money, with no possibility of anyone obtaining your bank details, PIN number, etc. Our research therefore promises substantial benefits to the health, wealth, wellbeing and security of our society.
期刊论文(10)
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DOI:
10.1016/j.jcrysgro.2009.11.043
发表时间:
2010-02-01
期刊:
JOURNAL OF CRYSTAL GROWTH
影响因子:
1.8
作者:
[Ashraf, H., Rao, D. V. Sridhara, Hageman, P. R.]
通讯作者:
Hageman, P. R.
Evidence for Dark States in the Temperature Dependent Recombination Dynamics of InGaN/GaN Quantum Wells
InGaN/GaN 量子阱温度相关复合动力学中暗态的证据
DOI:
10.7567/jjap.52.08jl12
发表时间:
2013
期刊:
Japanese Journal of Applied Physics
影响因子:
1.5
作者:
[Badcock T]
通讯作者:
Badcock T
Optical polarisation anisotropy in a -plane GaN/AlGaN multiple quantum well structures
a 平面 GaN/AlGaN 多量子阱结构中的光学偏振各向异性
DOI:
10.1002/pssc.200880796
发表时间:
2009
期刊:
physica status solidi c
影响因子:
--
作者:
[Badcock T]
通讯作者:
Badcock T
The effect of indium concentration on the optical properties of a -plane InGaN/GaN quantum wells grown on r -plane sapphire substrates
铟浓度对r面蓝宝石衬底上生长的a面InGaN/GaN量子阱光学性能的影响
DOI:
10.1002/pssa.201001007
发表时间:
2011
期刊:
physica status solidi (a)
影响因子:
--
作者:
[Badcock T]
通讯作者:
Badcock T
Accurate calibration for the quantification of the Al content in AlGaN epitaxial layers by energy-dispersive X-ray spectroscopy in a Transmission Electron Microscope
通过透射电子显微镜中的能量色散 X 射线光谱准确定量 AlGaN 外延层中的 Al 含量
DOI:
10.1088/1742-6596/326/1/012028
发表时间:
2011
期刊:
Conference Series
影响因子:
--
作者:
[Amari H]
通讯作者:
Amari H
共 8 条
Lighting the Future
-
批准号:EP/I012591/1
-
项目类别:Research Grant
-
资助金额:$810.6万
-
财政年份:2010
-
负责人:Colin Humphreys
-
依托单位:
Science Bridge Award USA: Harnessing Materials for Energy
-
批准号:EP/G042330/1
-
项目类别:Research Grant
-
资助金额:$184.46万
-
财政年份:2009
-
负责人:Colin Humphreys
-
依托单位:
LED Lighting for the 21st Century
-
批准号:TS/G001383/1
-
项目类别:Research Grant
-
资助金额:$27.97万
-
财政年份:2008
-
负责人:Colin Humphreys
-
依托单位:
Defect reduction in GaN using the in-situ growth of transition metal nitride layers
-
批准号:EP/F018614/1
-
项目类别:Research Grant
-
资助金额:$5.05万
-
财政年份:2008
-
负责人:Colin Humphreys
-
依托单位:
Quantitative, high resolution two-and-three dimensional dopant mapping in the Scanning Electron Microscope by Secondary Electron Spectro-Micro
-
批准号:EP/E029892/1
-
项目类别:Research Grant
-
资助金额:$5.82万
-
财政年份:2007
-
负责人:Colin Humphreys
-
依托单位:
Materials Challenges in GaN-based Light Emitting Structures
-
批准号:EP/E035167/1
-
项目类别:Research Grant
-
资助金额:$173.56万
-
财政年份:2006
-
负责人:Colin Humphreys
-
依托单位:
Optimising GaN light emitting structures on free-standing GaN substrates
-
批准号:EP/E031625/1
-
项目类别:Research Grant
-
资助金额:$8.78万
-
财政年份:2006
-
负责人:Colin Humphreys
-
依托单位:
海外基金