LED Lighting for the 21st Century

21 世纪的 LED 照明

• 批准号: TS/G001383/1
• 负责人: Colin Humphreys
• 金额: $ 27.97万
• 依托单位: University of Cambridge
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2008
• 资助国家: 英国
• 起止时间: 2008 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=TS%2FG001383%2F1
• 关键词: LED; Lighting; 21st; Century

A major factor preventing the acceptance of LED lighting in our homes and offices is cost. The Cambridge part of this proposal focuses on reducing the cost by growing LED structures on silicon substrates which are much deeper than the sapphire substrates normally used. Our industrial partner, PhotonStar LED, plans to use ultra-thin flip-chip LEDs, which means that the substrate has to be removed. A major challenge is for Cambridge to incorporate a novel interlayer in the growth process which facilitates the removal of the substrate.Initially Cambridge will use sapphire substrates to test our ideas for interlayers. For example, it is proposed to grow n-GaN on sapphire, followed by an AlGaN interlayer, followed by further growth of n-GaN, and then multi-quantum-wells of InGaN/GaN. The plan is for the AlGaN interlayer to facilitate the removal of the sapphire substrate plus some of the n-GaN.Having developed a suitable interlayer for growth on sapphire we will then move to growth on silicon with an interlayer. Possible candidates are AlN or SiN. Because of the higher dislocation densities in growth on silicon we will need to introduce additional interlayers of other materials to reduce the dislocation density. We will then deliver to PhotonStar LED an ultra-thin, low-cost, GaN LED structure emitting at 450 nm.

阻碍我们家庭和办公室接受LED照明的一个主要因素是成本。该提案的剑桥部分集中于通过在比通常使用的蓝宝石衬底深得多的硅衬底上生长LED结构来降低成本。我们的工业合作伙伴PhotonStar LED计划使用超薄倒装芯片LED，这意味着必须移除基板。剑桥面临的一个主要挑战是在生长过程中加入一种新的中间层，以便于去除衬底。最初，剑桥将使用蓝宝石衬底来测试我们的中间层想法。例如，提出在蓝宝石上生长n-GaN，然后生长AlGaN夹层，然后进一步生长n-GaN，然后生长InGaN/GaN的多量子威尔斯。该计划是为AlGaN夹层，以促进蓝宝石衬底加上一些n-GaN的去除。开发了一个合适的夹层蓝宝石上的生长，我们将转移到硅上的生长与夹层。可能的候选物是AlN或SiN。由于在硅上生长的位错密度较高，我们将需要引入其他材料的附加夹层来降低位错密度。然后，我们将向PhotonStar LED提供一种超薄、低成本的GaN LED结构，其发射波长为450 nm。

项目成果

Recombination mechanisms in heteroepitaxial non-polar InGaN/GaN quantum wells

异质外延非极性InGaN/GaN量子阱中的复合机制

• DOI: 10.1063/1.4731730
• 发表时间: 2012
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: Badcock T

The effect of indium concentration on the optical properties of a -plane InGaN/GaN quantum wells grown on r -plane sapphire substrates

铟浓度对r面蓝宝石衬底上生长的a面InGaN/GaN量子阱光学性能的影响

• DOI: 10.1002/pssa.201001007
• 发表时间: 2011
• 期刊: physica status solidi (a)
• 作者: Badcock T

The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r-Plane Sapphire Substrates

位错密度和表面形貌对 r 面蓝宝石衬底上生长的 InGaN/GaN 量子阱光学性能的影响

• DOI: 10.1143/jjap.50.080201
• 发表时间: 2011
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: Badcock T

Reduction of the dislocation density in HVPE-grown GaN epi-layers by an in situ SiNx treatment

• DOI: 10.1016/j.jcrysgro.2009.11.043
• 发表时间: 2010-02-01
• 期刊: JOURNAL OF CRYSTAL GROWTH
• 影响因子: 1.8
• 作者: Ashraf, H.;Rao, D. V. Sridhara;Hageman, P. R.
• 通讯作者: Hageman, P. R.

Properties of surface-pit related emission in a -plane InGaN/GaN quantum wells grown on r -plane sapphire

r 面蓝宝石上生长的 a 面 InGaN/GaN 量子阱的表面凹坑相关发射特性

• DOI: 10.1002/pssc.201001043
• 发表时间: 2011
• 期刊: physica status solidi c
• 作者: Badcock T