Gallium nitride enabled hybrid and flexible photonics
氮化镓实现混合和柔性光子学
基本信息
- 批准号:EP/I029141/1
- 负责人:
- 金额:$ 133.58万
- 依托单位:
- 依托单位国家:英国
- 项目类别:Research Grant
- 财政年份:2011
- 资助国家:英国
- 起止时间:2011 至 无数据
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Compound semiconductors lie at the heart of modern-day information and communications technologies, and of these none is currently more important than gallium nitride and its associated family of alloys. This material system allows the production of sophisticated optical devices (lasers, light-emitting diodes, photodiodes) covering the ultraviolet and visible spectrum for displays, optical data storage and photovoltaics; it enables the development of advanced microwave electronic devices (transistors) for high temperature, high power and high frequency operation. Most of the work currently undertaken with gallium nitride focuses on the basic material itself and the devices that can be made directly from it. Here, in a visionary programme interfacing to a wide range of other materials and disciplines, we seek to explore the unique potential of gallium nitride for 'hybrid and flexible photonics'. These two interrelated themes involve the integration of nitride semiconductor micro/nanostructures and devices with compatible hard and soft materials, which we take to include single crystal diamond, nanocomposites, polymer overlayers and substrates, printable electronics, organic resists, biopolymers, and metal/plasmonic structures. Imagine, for example, hybrid waveguide devices made from gallium nitride and diamond. These could generate and manipulate single photons of light, towards computation and communications systems exploiting the full potential of quantum mechanics, or could enable lasers to be made from diamond via the so-called stimulated Raman process. Imagine, furthermore, the transfer of gallium nitride devices onto flexible substrates and their control via printable electronics. This could facilitate large area micro-displays, and a wide range of instrumentation and communications systems. Imagine the wavelength conversion of gallium nitride emission via nanocomposites and metal-based plasmonic effects, as the basis of multi-gigahertz visible light communications systems. Imagine a range of nanophotonic sources capable of stuying fundamental energy transfer processes on a nanoscale and of performing ultra-high resolution photolithography and direct write patterning. All of these capabilities and more can be forseen by the development of hybrid technologies based on gallium nitride. They present tremendous opportunities for UK leadership in fields of science and technology as diverse as nanoscience, lasers and nonlinear optics, quantum information, bioscience and visible light communications.
化合物半导体是现代信息和通信技术的核心,而在这些技术中,没有一种比氮化镓及其相关合金家族更重要。该材料系统允许生产复杂的光学器件(激光器,发光二极管,光电二极管),覆盖用于显示,光学数据存储和光伏的紫外和可见光谱;它使开发高温、大功率、高频工作的先进微波电子器件(晶体管)成为可能。目前对氮化镓进行的大部分工作都集中在基本材料本身和可以直接由它制成的设备上。在这里,在一个有远见的项目中,我们与其他材料和学科相结合,试图探索氮化镓在“混合和柔性光子学”方面的独特潜力。这两个相互关联的主题涉及氮化半导体微/纳米结构和器件与兼容硬和软材料的集成,我们采取的包括单晶金刚石,纳米复合材料,聚合物覆盖层和衬底,可印刷电子,有机电阻,生物聚合物和金属/等离子体结构。想象一下,例如,由氮化镓和金刚石制成的混合波导器件。这些技术可以产生和操纵单光子,用于开发量子力学的全部潜力的计算和通信系统,或者可以通过所谓的受激拉曼过程从钻石中制造激光器。此外,想象一下将氮化镓器件转移到柔性衬底上,并通过可印刷电子设备对其进行控制。这可以促进大面积微型显示器,以及广泛的仪器和通信系统。想象一下,通过纳米复合材料和金属基等离子体效应,氮化镓发射的波长转换,作为千兆赫可见光通信系统的基础。想象一下,一系列纳米光子源能够在纳米尺度上研究基本的能量转移过程,并执行超高分辨率光刻和直接写入图案。基于氮化镓的混合技术的发展可以预见所有这些能力和更多的能力。他们为英国在纳米科学、激光和非线性光学、量子信息、生物科学和可见光通信等科学技术领域的领导地位提供了巨大的机会。
项目成果
期刊论文数量(10)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures
InGaN/GaN 量子阱结构中沟槽状缺陷的阴极发光高光谱成像
- DOI:10.1088/0022-3727/47/13/135107
- 发表时间:2014
- 期刊:
- 影响因子:0
- 作者:Bruckbauer J
- 通讯作者:Bruckbauer J
Cathodoluminescence nano-characterization of semiconductors
- DOI:10.1088/0268-1242/26/6/064005
- 发表时间:2011-06-01
- 期刊:
- 影响因子:1.9
- 作者:Edwards, Paul R.;Martin, Robert W.
- 通讯作者:Martin, Robert W.
Excitonic localization in AlN-rich AlxGa1-xN/AlyGa1-yN multi-quantum-well grain boundaries
- DOI:10.1063/1.4896681
- 发表时间:2014-09
- 期刊:
- 影响因子:4
- 作者:I. Ajia;P. Edwards;Zhiqiang Liu;J. C. Yan;R. Martin;I. Roqan
- 通讯作者:I. Ajia;P. Edwards;Zhiqiang Liu;J. C. Yan;R. Martin;I. Roqan
Cathodoluminescence Hyperspectral Imaging of Nitride Semiconductors: Introducing New Variables
氮化物半导体的阴极发光高光谱成像:引入新变量
- DOI:10.1017/s1431927614006254
- 发表时间:2014
- 期刊:
- 影响因子:2.8
- 作者:Edwards P
- 通讯作者:Edwards P
Corrigendum: Cathodoluminescence nano-characterization of semiconductors (2011 Semicond. Sci. Technol. 26 064005)
勘误表:半导体的阴极发光纳米表征(2011 Semicond. Sci. Technol. 26 064005)
- DOI:10.1088/1361-6641/aac678
- 发表时间:2018
- 期刊:
- 影响因子:1.9
- 作者:Edwards P
- 通讯作者:Edwards P
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Martin David Dawson其他文献
Martin David Dawson的其他文献
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{{ truncateString('Martin David Dawson', 18)}}的其他基金
FlexiLEDs with printed graphene based thermal management
具有基于印刷石墨烯热管理的 FlexiLED
- 批准号:
EP/P51018X/1 - 财政年份:2016
- 资助金额:
$ 133.58万 - 项目类别:
Research Grant
Ultra-parallel visible light communications (UP-VLC)
超并行可见光通信(UP-VLC)
- 批准号:
EP/K00042X/1 - 财政年份:2012
- 资助金额:
$ 133.58万 - 项目类别:
Research Grant
Hybrid organic semiconductor/gallium nitride/CMOS smart pixel arrays
混合有机半导体/氮化镓/CMOS智能像素阵列
- 批准号:
EP/F05999X/1 - 财政年份:2008
- 资助金额:
$ 133.58万 - 项目类别:
Research Grant
Semiconductor-based hybrid structures for ultraviolet micro-devices
用于紫外微型器件的半导体混合结构
- 批准号:
EP/D078555/1 - 财政年份:2007
- 资助金额:
$ 133.58万 - 项目类别:
Research Grant
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