Creating Silicon Based Platforms for New Technologies

为新技术创建基于硅的平台

• 批准号: EP/J001074/1
• 负责人: David Leadley
• 金额: $ 174.22万
• 依托单位: University of Warwick
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2012
• 资助国家: 英国
• 起止时间: 2012 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FJ001074%2F1
• 关键词: Creating; Silicon; Based; Platforms; New

Si-based structures are likely to be central to a new era of technologies with a major impact on society, spanning computing and health monitoring, to combating climate change. For this, serious and well established Group IV semiconductor (Si, Ge) epitaxy capabilities will be in great demand.The Warwick Nano-Silicon group focuses on epitaxial growth of Group IV heterostructures; their structural and electrical properties; the physics of these materials and functional devices fabricated from them. The Group has a unique growth capability, with both flexible research and industrially compatible systems, that enables it to respond to exciting new developments in silicon-based technologies: nano-electronics, silicon photonics, solar power, quantum computing, spintronics and electronic refrigeration ("cooltronics"). A major strategy of the Group has been to use expertise established in the field of nanoelectronics for novel and diverse applications.This Platform Grant would be used to establish a flexible infra-structure to realise the huge potential of the epitaxy facilities at Warwick. A set of feasibility studies would be spawned on specific ideas that are either too speculative, under developed or individually too incremental to gain Responsive Mode support. These would enable expertise to be developed in a wide range of novel epitaxy techniques that anticipate demands and, by pushing the boundaries of epitaxy, generate new disruptive technologies. Each activity would be supported by staff effort from Research Assistants seconded from, or between, existing funded projects or by providing short RA appointments to recently completed PhD students who are in their most productive period just after thesis submission. Full programmes subsequently generated will contribute to the longer term future of the Nano-Silicon Group, enhancing its already significant international reputation, and could themselves generate considerable impact. Researchers in the Group would receive a significant career boost from training in epitaxy and characterization. There would be opportunities for exchanges to other European institutes, which are extremely beneficial for collaboration and career development. Researchers would also develop new skills by attending international workshops. By being given responsibility for delivering a feasibility study, each researcher would have opportunities for leadership development. Some activities will directly support the Group's current projects. For instance, development of low temperature epitaxy using new CVD precursors, for which processes currently only exist for specific cases and many are commercially confidential. This will enable novel multi-layered structures with advanced and unique electronic and optical properties, and will improve the abruptness of interfaces and doping control required in existing structures such as superlattices, THz diodes and quantum cascade lasers. Another example is incorporating tin with the other Group IV elements to provide a larger lattice constant and hence a route to integrating a wide range of III-V devices on silicon. The flexibility to respond rapidly to new ideas will be a great benefit, especially in a field where device performance doubles every 18 months. Similarly, opportunities often arise in existing projects to investigate alternative directions. Within a Platform these could be followed alongside the original work, adding value to the existing programme yet avoiding mission creep or spreading existing resources too thinly.Overall the flexible resources available within a Platform Grant will be of great assistance in pursuing our long term strategic goals of developing silicon based epitaxy for a diverse range of applications.

硅基结构可能是新时代技术的核心，对社会产生重大影响，包括计算和健康监测，以应对气候变化。为此，将对第四族半导体（Si，Ge）外延能力提出更高的要求。沃里克纳米硅团队专注于第四族异质结构的外延生长;它们的结构和电学特性;这些材料的物理特性以及由它们制造的功能器件。该集团拥有独特的增长能力，拥有灵活的研究和工业兼容系统，使其能够应对硅基技术的令人兴奋的新发展：纳米电子学，硅光子学，太阳能，量子计算，自旋电子学和电子制冷（“cooltronics”）。该集团的一个主要战略是利用纳米电子领域的专业知识来实现新颖和多样化的应用。这笔平台资助将用于建立灵活的基础设施，以实现沃里克外延设施的巨大潜力。一组可行性研究将产生在具体的想法，要么是太投机，欠发达或个别太增量获得响应模式的支持。这将使专门知识能够在广泛的新型外延技术中得到发展，这些技术可以预测需求，并通过推动外延的边界，产生新的颠覆性技术。每项活动都将得到从现有资助项目借调或在现有资助项目之间借调的研究助理的工作人员的支持，或者向最近完成的博士生提供短期RA任命，这些博士生在论文提交后处于最富有成效的时期。随后产生的完整计划将有助于纳米硅集团的长期未来，增强其本已重要的国际声誉，并且本身也可能产生相当大的影响。该小组的研究人员将从外延和表征方面的培训中获得重大的职业发展。将有机会交流到其他欧洲机构，这是非常有益的合作和职业发展。研究人员还将通过参加国际讲习班来发展新的技能。通过负责提供可行性研究，每个研究人员都有机会发展领导能力。有些活动将直接支持小组目前的项目。例如，开发使用新的CVD前体的低温外延，其工艺目前仅存在于特定情况下，并且许多都是商业机密。这将使新型多层结构具有先进和独特的电子和光学特性，并将改善现有结构（如超晶格，THz二极管和量子级联激光器）中所需的界面和掺杂控制。另一个例子是将锡与其他IV族元素结合以提供更大的晶格常数，从而提供在硅上集成各种III-V族器件的途径。快速响应新想法的灵活性将是一个巨大的好处，特别是在设备性能每18个月翻一番的领域。同样，在现有项目中也经常出现研究替代方向的机会。在一个平台内，这些可以与原始工作一起进行，为现有计划增加价值，同时避免使命蠕变或将现有资源过于分散。总体而言，平台赠款内提供的灵活资源将对实现我们为各种应用开发硅基外延的长期战略目标有很大帮助。

项目成果

Analysis of surface defects in Si 1- y C y epilayers formed by the oversaturation of carbon

碳过饱和形成的Si 1- y C y 外延层表面缺陷分析

• DOI: 10.1088/0268-1242/30/11/114003
• 发表时间: 2015
• 期刊: Semiconductor Science and Technology
• 影响因子: 1.9
• 作者: Colston G

Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications

用于单光子雪崩二极管应用的厚硅基硅结构的外延生长优化

• DOI: 10.1109/istdm.2014.6874639
• 发表时间: 2014
• 作者: Allred P

Magnetotransport studies of SiGe-based p -type heterostructures: Problems with the determination of effective mass

SiGe基p型异质结构的磁输运研究：有效质量的确定问题

• DOI: 10.1063/1.4770520
• 发表时间: 2012
• 期刊: Low Temperature Physics
• 影响因子: 0.8
• 作者: Berkutov I

Flexural mode dispersion in ultra-thin Ge membranes

• DOI: 10.1109/ulis.2013.6523515
• 发表时间: 2013-03
• 期刊: 2013 14th International Conference on Ultimate Integration on Silicon (ULIS)
• 作者: E. Chavez;J. Gomis-Bresco;F. Alzina;J. Reparaz;V. Shah;M. Myronov;D. Leadley;C. S. Sotomayor Torres

Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz

160 GHz 应变硅冷电子测辐射热计的光学特性

• DOI: 10.1109/ucmmt.2015.7460630
• 发表时间: 2015
• 作者: Brien T