Ultimate Control of Strain Relaxation Processes in SiGe Layers
SiGe 层应变弛豫过程的最终控制
基本信息
- 批准号:EP/D034485/1
- 负责人:
- 金额:$ 16.2万
- 依托单位:
- 依托单位国家:英国
- 项目类别:Research Grant
- 财政年份:2006
- 资助国家:英国
- 起止时间:2006 至 无数据
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Silicon is the bedrock of the digital revolution. It occupies this position because of its unique chemical and physical properties. The low speed with which electrons and other current carriers move across silicon has traditionally been seen as a problem which can be solved by reductions in device size. As scaling of silicon devices into the nanometre regime becomes increasingly difficult and prohibitively expensive on a commercial scale, new channel materials could play a critical role that maintains the dominant position of silicon electronics well into the future. For example, the mobility of electrons, etc, may be increased, with consequent improvements in device speed and/or power consumption, by growing a thin layer of silicon on a SiGe platform which produces tensile strain in the silicon. Unfortunately current versions of these SiGe virtual substrates have high densities of defects and poor surface topography, making them unsuitable for commercial production. The proposed work concerns the development of novel and radical approaches to the development of SiGe virtual substrates of unprecedented quality in this respect.
硅是数字革命的基石。它占据这个位置是因为它独特的化学和物理性质。电子和其他电流载流子在硅上移动的速度低,传统上被认为是一个可以通过减小器件尺寸来解决的问题。随着将硅器件扩展到纳米级变得越来越困难,并且在商业规模上变得昂贵,新的通道材料可能在保持硅电子产品在未来的主导地位方面发挥关键作用。例如,通过在硅中产生拉伸应变的SiGe平台上生长一层薄硅,可以增加电子的迁移率等,从而提高设备速度和/或功耗。不幸的是,这些SiGe虚拟基板的当前版本具有高密度的缺陷和较差的表面形貌,使其不适合商业生产。提出的工作涉及在这方面开发具有前所未有质量的SiGe虚拟基板的新颖和激进的方法。
项目成果
期刊论文数量(5)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Low temperature epitaxial growth of compressive strained Ge layers on reverse linearly graded virtual substrate by RP-CVD
RP-CVD在反向线性梯度虚拟衬底上低温外延生长压应变Ge层
- DOI:
- 发表时间:2009
- 期刊:
- 影响因子:0
- 作者:M Myronov
- 通讯作者:M Myronov
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David Leadley其他文献
David Leadley的其他文献
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{{ truncateString('David Leadley', 18)}}的其他基金
EPSRC Core Equipment Award 2022: University of Warwick
2022 年 EPSRC 核心设备奖:华威大学
- 批准号:
EP/X034836/1 - 财政年份:2023
- 资助金额:
$ 16.2万 - 项目类别:
Research Grant
Spintronic device physics in Si/Ge Heterostructures.
硅/锗异质结构中的自旋电子器件物理。
- 批准号:
EP/J003263/1 - 财政年份:2012
- 资助金额:
$ 16.2万 - 项目类别:
Research Grant
Creating Silicon Based Platforms for New Technologies
为新技术创建基于硅的平台
- 批准号:
EP/J001074/1 - 财政年份:2012
- 资助金额:
$ 16.2万 - 项目类别:
Research Grant
Near infrared single photon detection using Ge-on-Si heterostructures
使用 Ge-on-Si 异质结构进行近红外单光子检测
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EP/I000011/1 - 财政年份:2010
- 资助金额:
$ 16.2万 - 项目类别:
Research Grant
Room Temperature Terahertz Quantum Cascade Lasers on Silicon Substrates
硅衬底上的室温太赫兹量子级联激光器
- 批准号:
EP/H025294/1 - 财政年份:2010
- 资助金额:
$ 16.2万 - 项目类别:
Research Grant
Silicon Resonant Tunnelling Diodes and Circuits
硅谐振隧道二极管和电路
- 批准号:
EP/G041229/1 - 财政年份:2009
- 资助金额:
$ 16.2万 - 项目类别:
Research Grant
On-Chip milliKelvin Electronic Refrigerator for Astronomical and Quantum Device Applications
适用于天文和量子设备应用的片上毫开尔文电子制冷机
- 批准号:
EP/F040784/1 - 财政年份:2008
- 资助金额:
$ 16.2万 - 项目类别:
Research Grant
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