Electrochemically Gated Single Molecule FETs

电化学门控单分子 FET

• 批准号: EP/K007785/1
• 负责人: Richard Nichols
• 金额: $ 40.35万
• 依托单位: University of Liverpool
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2013
• 资助国家: 英国
• 起止时间: 2013 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FK007785%2F1
• 关键词: Electrochemically; Gated; Single; Molecule; FETs

Moore's Law, the observation that the number of components that can be placed on a silicon chip approximately doubles every two years, with commensurate increases in the processing and data storage capacities of devices, and decreases in the unit cost of components, has driven technological achievement and new materials science for 40 years. Devices featuring <45 nm feature sizes are now in production, and close-to-market chips with 22 nm feature sizes are being disclosed. However, to achieve these remarkable device sizes, top-down scaling is giving way to more complex and lithographically challenging 3-D designs, and conventional materials superseded. Although 'More Moore' remains an important driver for the semiconductor industry, the concept of 'More than Moore', in which added value is packaged into devices by adding functionalities that themselves do not necessarily scale in line with Moore's Law is growing as a design strategy. The integration of smaller and faster device technology with innovative total systems packaging is now seen as the most feasible route to improve device performance, recognising the increasing difficulties in following traditional top-down scaling. With or without More than Moore augmentation, if pace of electronic device development is to continue along a Moore's Law projection in the longer-term further reductions in feature size will be required. Two consequences flow from this proposition. The first is that, in the medium-long term, feature sizes will approach molecular dimensions. The second, more practical and more immediate consequence, is that new materials must now be integrated into silicon-based devices. In the present generation 45 nm chips , a SiO2 gate would be so thin as to leak too much current when the transistor is in the 'off' state. This problem was recognised, and the solution (a high-dielectric alternative insulator) apparent, long before the exact materials solution was conceived. HfO2 is now used as the transistor gate insulator despite the technical challenges inherent in depositing HfO2, a highly refractory and expensive material. Thus, while 'molecular electronics' is commonly perceived to be very difficult to implement, the continued development of 'traditional' silicon technology also faces profound and difficult challenges, which industry adapts to meet.The term 'molecular electronics' is generally applied to structures designed to involve a single molecule, a small bundle of molecules, or a single layer of molecules, oriented between two contacts (which may be metals or semiconductors), with the critical dimension between the contacts therefore lying in the nanometer size range. Circuit components at the molecular level could exploit the small size of molecules and their enormous potential variation in structure and properties, controlled using the tools of synthetic chemistry, to increase device density and to incorporate new functionality into existing or new microelectronic architectures. Primary objectives in this research phase are (a) to identify classes of molecular materials, and their contacts, which display promising attributes for molecular electronics, (b) to identify and understand mechanisms by which the electrical properties can be exploited, (c) to further develop defined metrological techniques for reliably determining the electrical behaviour of molecular devices. To convey future practical relevance our focus will be on room temperature operation and condensed matter interfaces.

摩尔定律指出，硅芯片上可放置的元件数量大约每两年增加一倍，设备的处理和数据存储能力相应增加，元件的单位成本下降，40 年来一直推动着技术进步和新材料科学。特征尺寸 <45 nm 的器件现已投入生产，并且即将上市的特征尺寸为 22 nm 的芯片也正在公开中。然而，为了实现这些非凡的器件尺寸，自上而下的缩放正在让位于更复杂且具有光刻挑战性的 3D 设计，并且传统材料被取代。尽管“更多摩尔”仍然是半导体行业的重要驱动力，但“超越摩尔”的概念正在作为一种设计策略不断发展，其中通过添加本身不一定符合摩尔定律的功能来将附加值封装到设备中。认识到遵循传统的自上而下扩展的难度越来越大，现在将更小、更快的设备技术与创新的整体系统封装相集成被视为提高设备性能的最可行途径。不管是否有超过摩尔的增强，如果电子设备的开发步伐要在长期内继续沿着摩尔定律预测，则将需要进一步减小特征尺寸。这个命题产生了两个结果。首先，从中长期来看，特征尺寸将接近分子尺寸。第二个更实际、更直接的后果是新材料现在必须集成到硅基设备中。在当前一代 45 nm 芯片中，SiO2 栅极太薄，以至于当晶体管处于“关闭”状态时会泄漏太多电流。早在确切的材料解决方案被构思出来之前，这个问题就已经被认识到，解决方案（高介电替代绝缘体）也显而易见。尽管沉积 HfO2 这种高难熔且昂贵的材料存在固有的技术挑战，但 HfO2 现在仍被用作晶体管栅极绝缘体。因此，虽然“分子电子学”通常被认为很难实现，但“传统”硅技术的持续发展也面临着深刻而困难的挑战，业界需要适应这些挑战。“分子电子学”一词通常应用于设计为涉及单个分子、一小束分子或单层分子的结构，这些结构位于两个接触点（可以是金属或金属）之间。 半导体），因此触点之间的临界尺寸位于纳米尺寸范围内。分子水平的电路元件可以利用分子的小尺寸及其在结构和性能方面的巨大潜在变化，并使用合成化学工具进行控制，以增加器件密度并将新功能纳入现有或新的微电子架构中。该研究阶段的主要目标是（a）识别分子材料的类别及其接触，这些材料显示出分子电子学有前景的属性，（b）识别和理解可利用电特性的机制，（c）进一步开发定义的计量技术，以可靠地确定分子器件的电行为。为了传达未来的实际相关性，我们的重点将是室温操作和凝聚态物质界面。

项目成果

Single-Molecule Conductance Studies of Organometallic Complexes Bearing 3-Thienyl Contacting Groups.

• DOI: 10.1002/chem.201604565
• 发表时间: 2017-02-10
• 期刊: Chemistry (Weinheim an der Bergstrasse, Germany)
• 作者: Bock S;Al-Owaedi OA;Eaves SG;Milan DC;Lemmer M;Skelton BW;Osorio HM;Nichols RJ;Higgins SJ;Cea P;Long NJ;Albrecht T;Martín S;Lambert CJ;Low PJ
• 通讯作者: Low PJ

Controlling the structural and electrical properties of diacid oligo(phenylene ethynylene) Langmuir-Blodgett films.

• DOI: 10.1002/chem.201203261
• 发表时间: 2013-04
• 期刊: Chemistry
• 作者: L. Ballesteros;S. Martín;Javier Cortés;Santiago Marqués-González;S. Higgins;R. Nichols;P. Low;P. Cea

From an Organometallic Monolayer to an Organic Monolayer Covered by Metal Nanoislands: A Simple Thermal Protocol for the Fabrication of the Top Contact Electrode in Molecular Electronic Devices

• DOI: 10.1002/admi.201400128
• 发表时间: 2014-12-01
• 期刊: ADVANCED MATERIALS INTERFACES
• 影响因子: 5.4
• 作者: Ballesteros, Luz M.;Martin, Santiago;Cea, Pilar
• 通讯作者: Cea, Pilar

Ionic liquid based approach for single-molecule electronics with cobalt contacts.

• DOI: 10.1021/la503077c
• 发表时间: 2014-11
• 期刊: Langmuir : the ACS journal of surfaces and colloids
• 作者: Samantha R Catarelli;S. Higgins;W. Schwarzacher;B. Mao;Jiawei Yan;R. Nichols

Single Gold Atom Containing Oligo(phenylene)ethynylene: Assembly into LB Films and Electrical Characterization

• DOI: 10.1021/jp510078w
• 发表时间: 2015-01-08
• 期刊: JOURNAL OF PHYSICAL CHEMISTRY C
• 影响因子: 3.7
• 作者: Balesteros, Luz M.;Martin, Santiago;Cea, Pilar
• 通讯作者: Cea, Pilar