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Manufacturing R&D Facility: Electron Beam Epitaxy

Manufacturing R&D Facility: Electron Beam Epitaxy
制造研发
批准号:
EP/K024493/1
负责人:
Michelle Moram
金额:
$7.79万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2013
资助国家:
英国
项目状态:
已结题
起止时间:
2013 至 --

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中文摘要
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英文摘要
The UK hosts a broad range of world-leading research on nanostructured and epitaxial thin films of functional and device materials. However, there are insufficient facilities for the scale-up and production of devices arising from this work, which substantially limits IP licensing and commercial exploitation opportunities. According to our letter of support from Imperial Innovations, "a technology development gap often exists between academic research and industry", but "in the engineering disciplines, industry is risk-averse and requires that initial proof of new technologies be carried out by the academic institute itself". To bridge this gap, we plan to set up a new large-area electron beam epitaxy manufacturing system for the development, analysis, scale-up and test production of both new and existing devices. This facility will be capable of developing and utilising materials that cannot be grown easily using existing commercial techniques (e.g. molecular beam epitaxy (MBE) or metalorganic vapour phase epitaxy (MOVPE)). Our broad materials deposition capability would promote successful scale-up work on cheaper, large-area substrates, which often need new intermediate 'buffer' materials. It would also increase the breadth and scope of device research in the UK, offering excellent prospects for new IP generation and enabling the UK to extend its world leading position in device research into the area of device development, scale up and production.
期刊论文(4)
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科研奖励(0)
会议论文
Dislocation core structures in (0001) InGaN
(0001) InGaN 中的位错核心结构
DOI: 10.1063/1.4942847
发表时间: 2016
期刊: Journal of Applied Physics
影响因子: 3.2
作者: [Rhode S]
通讯作者: Rhode S
DOI: 10.1016/j.solmat.2015.02.021
发表时间: 2015-03
期刊: Solar Energy Materials and Solar Cells
影响因子: 6.9
作者: [Xu Wu;A. Centeno;A. Centeno;Xuemei Zhang;Daniel Darvill;M. Ryan;D. Riley;N. Alford;F. Xie]
通讯作者: Xu Wu;A. Centeno;A. Centeno;Xuemei Zhang;Daniel Darvill;M. Ryan;D. Riley;N. Alford;F. Xie
Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC.
  • 批准号:
    EP/J016101/1
  • 项目类别:
    Research Grant
  • 资助金额:
    $2.11万
  • 财政年份:
    2013
  • 负责人:
    Michelle Moram
  • 依托单位:
Multifunctional III-nitride materials
  • 批准号:
    EP/I036052/1
  • 项目类别:
    Research Grant
  • 资助金额:
    $10.07万
  • 财政年份:
    2011
  • 负责人:
    Michelle Moram
  • 依托单位:
国内基金
海外基金
R&D会计制度改革的理论分析和经济后果研究
  • 批准号:
    72172117
  • 项目类别:
    面上项目
  • 资助金额:
    48万元
  • 批准年份:
    2021
  • 负责人:
    李留闯
  • 依托单位:
竞争企业进入情景下制造商提升供应商R&D的投资与运营策略研究
  • 批准号:
    72002104
  • 项目类别:
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  • 资助金额:
    24.0万元
  • 批准年份:
    2020
  • 负责人:
    刘冠美
  • 依托单位:
中国企业R&D国际化区位选择:多维邻近性和企业异质性视角
  • 批准号:
    41901152
  • 项目类别:
    青年科学基金项目
  • 资助金额:
    28.0万元
  • 批准年份:
    2019
  • 负责人:
    胡曙虹
  • 依托单位:
R&D投入作为IT补充性资源的影响机制与边界研究
  • 批准号:
    71902075
  • 项目类别:
    青年科学基金项目
  • 资助金额:
    20.0万元
  • 批准年份:
    2019
  • 负责人:
    王宇
  • 依托单位: