Manufacturing R&D Facility: Electron Beam Epitaxy

制造研发

• 批准号: EP/K024493/1
• 负责人: Michelle Moram
• 金额: $ 7.79万
• 依托单位: Imperial College London
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2013
• 资助国家: 英国
• 起止时间: 2013 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FK024493%2F1
• 关键词: Manufacturing; R&D; Facility; Electron; Beam

The UK hosts a broad range of world-leading research on nanostructured and epitaxial thin films of functional and device materials. However, there are insufficient facilities for the scale-up and production of devices arising from this work, which substantially limits IP licensing and commercial exploitation opportunities. According to our letter of support from Imperial Innovations, "a technology development gap often exists between academic research and industry", but "in the engineering disciplines, industry is risk-averse and requires that initial proof of new technologies be carried out by the academic institute itself". To bridge this gap, we plan to set up a new large-area electron beam epitaxy manufacturing system for the development, analysis, scale-up and test production of both new and existing devices. This facility will be capable of developing and utilising materials that cannot be grown easily using existing commercial techniques (e.g. molecular beam epitaxy (MBE) or metalorganic vapour phase epitaxy (MOVPE)). Our broad materials deposition capability would promote successful scale-up work on cheaper, large-area substrates, which often need new intermediate 'buffer' materials. It would also increase the breadth and scope of device research in the UK, offering excellent prospects for new IP generation and enabling the UK to extend its world leading position in device research into the area of device development, scale up and production.

英国在功能和器件材料的纳米结构和外延薄膜方面开展了广泛的世界领先研究。然而，没有足够的设施来扩大和生产这项工作所产生的设备，这大大限制了知识产权许可和商业开发机会。根据我们来自帝国创新的支持信，“学术研究和工业之间经常存在技术发展差距”，但“在工程学科中，工业是风险厌恶的，要求新技术的初步证明由学术机构本身进行”。为了弥补这一差距，我们计划建立一个新的大面积电子束外延制造系统，用于新器件和现有器件的开发、分析、放大和试生产。该设施将能够开发和利用利用现有商业技术（例如分子束外延或金属有机气相外延）无法轻易生长的材料。我们广泛的材料沉积能力将促进在更便宜的大面积衬底上成功地扩大工作，这通常需要新的中间“缓冲”材料。它还将增加英国设备研究的广度和范围，为新一代IP提供良好的前景，并使英国能够将其在设备研究方面的世界领先地位扩展到设备开发，规模扩大和生产领域。

项目成果

Dislocation core structures in (0001) InGaN

(0001) InGaN 中的位错核心结构

• DOI: 10.1063/1.4942847
• 发表时间: 2016
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: Rhode S

Broadband plasmon photocurrent generation from Au nanoparticles/ mesoporous TiO2 nanotube electrodes

• DOI: 10.1016/j.solmat.2015.02.021
• 发表时间: 2015-03
• 期刊: Solar Energy Materials and Solar Cells
• 影响因子: 6.9
• 作者: Xu Wu;A. Centeno;A. Centeno;Xuemei Zhang;Daniel Darvill;M. Ryan;D. Riley;N. Alford;F. Xie