ADEPT - Advanced Devices by ElectroPlaTing
ADEPT - Advanced Devices by ElectroPlaTing
批准号:
EP/N035437/1
负责人:
Philip Bartlett
金额:
$806.82万
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2016
资助国家:
英国
项目状态:
已结题
起止时间:
2016 至 --
中文摘要
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英文摘要
Almost the whole of modern technology and life is underpinned by methods for depositing and shaping materials. For instance the transistors which power our mobile phones, tablets, etc. consist of areas of silicon whose dimensions are now of the order of only tens of atoms across. Whilst current materials deposition technologies are truly impressive, there is still a need for more innovative, better and reduced cost methods for depositing technologically important materials in order to increase energy efficiency, improve their functional properties and break through into potential new markets. This is particularly true when we consider materials beyond the narrow range of those used in electronics and telecoms. A clear example of this is in the field of thermoelectric materials which can already be used in devices such as refrigerators, but more importantly in generating electricity directly from waste heat. Fundamental science has shown that if we could produce such materials in the form of dense parallel arrays of ultrathin wires that are each only 10-100 atoms across, the efficiency of these devices would be massively enhanced. However, the technology to achieve the necessary high quality materials at this size scale does not currently exist. In the field of computer memory, materials whose electrical resistances can be altered by rapid heating and cooling, so called phase change materials, are being developed The key barriers to the wide spread application of these materials are their relatively high switching energy and reliability of many billions of switching cycles. These could be overcome if a materials deposition technique existed which allowed us to deposit smaller elements than can currently be achieved. Finally the materials that are used in heat, i.e. infrared, sensing cameras could have a much wider range of applications, e.g. in home security and short range communications between smart appliances, if the cost of depositing them wasn't so high. This project will directly address these challenges, by building upon our recent breakthroughs in using electrodeposition, in which an electrical current causes the deposition of a material, from unusual, 'weakly-coordinating' solvents, to develop methods for depositing high quality materials for advanced applications in the fields of thermoelectric devices, phase change memory and infrared sensors and cameras.
期刊论文(10)
专著(0)
科研奖励(0)
会议论文
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Synthesis, spectroscopic and structural properties of Sn( ii ) and Pb( ii ) triflate complexes with soft phosphine and arsine coordination
软膦、胂配位三氟甲磺酸Sn( ii )和Pb( ii )配合物的合成、光谱和结构性质
DOI:
10.1039/d2dt03687h
发表时间:
2023
期刊:
Dalton Transactions
影响因子:
4
作者:
[Cairns K]
通讯作者:
Cairns K
Mono- and di-phosphine oxide complexes of aluminium, gallium and indium with weakly coordinating triflate anions - Synthesis, structures and properties
铝、镓和铟与弱配位三氟甲磺酸根阴离子的单氧化膦和二氧化膦配合物 - 合成、结构和性能
DOI:
10.1016/j.poly.2021.115529
发表时间:
2021
期刊:
Polyhedron
影响因子:
2.6
作者:
[Cairns K]
通讯作者:
Cairns K
Self-assembly of [Sn(OPMe 3 ) 3 (CF 3 SO 3 ) 2 ] 6 metallocyclic Sn( ii ) hexamer stacks with CF 3 -lined channel interiors
具有 CF 3 内衬通道内部的 [Sn(OPMe 3 ) 3 (CF 3 SO 3 ) 2 ] 6 金属环 Sn( ii ) 六聚体堆叠的自组装
DOI:
10.1039/d2ce01029a
发表时间:
2022
期刊:
CrystEngComm
影响因子:
3.1
作者:
[Cairns K]
通讯作者:
Cairns K
Heterocyclic nitrogen donor complexes of aluminium, gallium and indium with weakly coordinating triflate anions
铝、镓和铟与弱配位三氟甲磺酸根阴离子的杂环氮供体配合物
DOI:
10.1016/j.poly.2021.115367
发表时间:
2021
期刊:
Polyhedron
影响因子:
2.6
作者:
[Cairns K]
通讯作者:
Cairns K
DOI:
10.1016/j.poly.2017.04.039
发表时间:
2017-09-05
期刊:
POLYHEDRON
影响因子:
2.6
作者:
[Bannister, Robert D., Levason, William, Zhang, Wenjian]
通讯作者:
Zhang, Wenjian
共 8 条
Correlative Raman, SEM and EDX for operando electrochemistry research
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批准号:EP/V007629/1
-
项目类别:Research Grant
-
资助金额:$90.43万
-
财政年份:2021
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负责人:Philip Bartlett
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依托单位:
Complex Nanostructures by Supercritical Fluid Electrodeposition
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批准号:EP/I033394/1
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项目类别:Research Grant
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资助金额:$654.99万
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财政年份:2011
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负责人:Philip Bartlett
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依托单位:
Plasmonic Interactions in Nano-Structured Voids
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批准号:EP/F05534X/1
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项目类别:Research Grant
-
资助金额:$38.08万
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财政年份:2009
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负责人:Philip Bartlett
-
依托单位:
Rapid DNA Fingerprinting
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批准号:EP/G006008/1
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项目类别:Research Grant
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资助金额:$13.09万
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财政年份:2008
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负责人:Philip Bartlett
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依托单位:
High-Throughput Electrochemistry - a new approach to the rapid development of modified carbon electrodes
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批准号:EP/D038588/1
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项目类别:Research Grant
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资助金额:$64.61万
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财政年份:2006
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负责人:Philip Bartlett
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依托单位:
Adventurous Chemistry - A New Generation of Nanoarchitectured Surfaces
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批准号:EP/D052815/1
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项目类别:Research Grant
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资助金额:$31.86万
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财政年份:2006
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负责人:Philip Bartlett
-
依托单位:
国内基金
海外基金
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Capture and Release of Droplets Using Advanced Materials for High Technology Applications
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批准号:52073127
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项目类别:面上项目
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资助金额:58.0万元
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批准年份:2020
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负责人:Alidad Amirfazli
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依托单位:
面向用户体验的IMT-Advanced系统跨层无线资源分配技术研究
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批准号:61201232
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项目类别:青年科学基金项目
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资助金额:25.0万元
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批准年份:2012
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负责人:胡亚辉
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依托单位:
LTE-Advanced中继网络关键技术研究
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批准号:61171096
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项目类别:面上项目
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资助金额:60.0万元
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批准年份:2011
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负责人:王献
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依托单位:
IMT-Advanced协作中继网络中的网络编码研究
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批准号:61040005
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项目类别:专项基金项目
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资助金额:10.0万元
-
批准年份:2010
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负责人:王静
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依托单位:
基于干扰预测的IMT-Advanced多小区干扰抑制技术研究
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批准号:61001116
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项目类别:青年科学基金项目
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资助金额:20.0万元
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批准年份:2010
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负责人:许晓东
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依托单位:
面向IMT-Advanced的移动组播关键技术研究
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批准号:61001071
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项目类别:青年科学基金项目
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资助金额:25.0万元
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批准年份:2010
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负责人:王海波
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依托单位: