课题基金 / 基金详情

ADEPT - Advanced Devices by ElectroPlaTing

ADEPT - Advanced Devices by ElectroPlaTing
ADEPT - 电镀先进设备
批准号:
EP/N035437/1
负责人:
Philip Bartlett
金额:
$806.82万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2016
资助国家:
英国
项目状态:
已结题
起止时间:
2016 至 --

项目摘要

项目成果

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中文摘要
翻译
几乎所有的现代技术和生活都是由沉积和成型材料的方法所支撑的。例如,为我们的移动的手机、平板电脑等供电的晶体管由硅区域组成,其尺寸现在只有几十个原子的大小。虽然目前的材料沉积技术确实令人印象深刻,但仍然需要更创新,更好和更低成本的方法来沉积技术上重要的材料,以提高能源效率,改善其功能特性并突破潜在的新市场。当我们考虑电子和电信中使用的狭窄范围之外的材料时,情况尤其如此。这方面的一个明显例子是热电材料领域,它已经可以用于冰箱等设备,但更重要的是直接从废热发电。基础科学已经表明,如果我们能够以密集的平行阵列的形式生产这种材料,每个阵列只有10-100个原子,这些设备的效率将大大提高。然而,目前还不存在以这种尺寸规模获得必要的高质量材料的技术。在计算机存储器领域,正在开发其电阻可以通过快速加热和冷却而改变的材料,即所谓的相变材料。这些材料广泛应用的关键障碍是它们相对较高的开关能量和数十亿次开关循环的可靠性。如果存在一种材料沉积技术,使我们能够存款比目前所能实现的更小的元素,这些问题就可以克服。最后,用于热(即红外)传感相机的材料可以具有更广泛的应用范围,例如,如果沉积它们的成本不是那么高,则可以用于家庭安全和智能电器之间的短距离通信。该项目将直接解决这些挑战,通过建立在我们最近在使用电沉积方面的突破,其中电流导致材料从不寻常的“弱配位”溶剂中沉积,以开发沉积高质量材料的方法,用于热电器件,相变存储器和红外传感器和相机领域的先进应用。
英文摘要
Almost the whole of modern technology and life is underpinned by methods for depositing and shaping materials. For instance the transistors which power our mobile phones, tablets, etc. consist of areas of silicon whose dimensions are now of the order of only tens of atoms across. Whilst current materials deposition technologies are truly impressive, there is still a need for more innovative, better and reduced cost methods for depositing technologically important materials in order to increase energy efficiency, improve their functional properties and break through into potential new markets. This is particularly true when we consider materials beyond the narrow range of those used in electronics and telecoms. A clear example of this is in the field of thermoelectric materials which can already be used in devices such as refrigerators, but more importantly in generating electricity directly from waste heat. Fundamental science has shown that if we could produce such materials in the form of dense parallel arrays of ultrathin wires that are each only 10-100 atoms across, the efficiency of these devices would be massively enhanced. However, the technology to achieve the necessary high quality materials at this size scale does not currently exist. In the field of computer memory, materials whose electrical resistances can be altered by rapid heating and cooling, so called phase change materials, are being developed The key barriers to the wide spread application of these materials are their relatively high switching energy and reliability of many billions of switching cycles. These could be overcome if a materials deposition technique existed which allowed us to deposit smaller elements than can currently be achieved. Finally the materials that are used in heat, i.e. infrared, sensing cameras could have a much wider range of applications, e.g. in home security and short range communications between smart appliances, if the cost of depositing them wasn't so high. This project will directly address these challenges, by building upon our recent breakthroughs in using electrodeposition, in which an electrical current causes the deposition of a material, from unusual, 'weakly-coordinating' solvents, to develop methods for depositing high quality materials for advanced applications in the fields of thermoelectric devices, phase change memory and infrared sensors and cameras.
期刊论文(10)
专著(0)
科研奖励(0)
会议论文
Synthesis, spectroscopic and structural properties of Sn( ii ) and Pb( ii ) triflate complexes with soft phosphine and arsine coordination
软膦、胂配位三氟甲磺酸Sn( ii )和Pb( ii )配合物的合成、光谱和结构性质
DOI: 10.1039/d2dt03687h
发表时间: 2023
期刊: Dalton Transactions
影响因子: 4
作者: [Cairns K]
通讯作者: Cairns K
Mono- and di-phosphine oxide complexes of aluminium, gallium and indium with weakly coordinating triflate anions - Synthesis, structures and properties
铝、镓和铟与弱配位三氟甲磺酸根阴离子的单氧化膦和二氧化膦配合物 - 合成、结构和性能
DOI: 10.1016/j.poly.2021.115529
发表时间: 2021
期刊: Polyhedron
影响因子: 2.6
作者: [Cairns K]
通讯作者: Cairns K
Self-assembly of [Sn(OPMe 3 ) 3 (CF 3 SO 3 ) 2 ] 6 metallocyclic Sn( ii ) hexamer stacks with CF 3 -lined channel interiors
具有 CF 3 内衬通道内部的 [Sn(OPMe 3 ) 3 (CF 3 SO 3 ) 2 ] 6 金属环 Sn( ii ) 六聚体堆叠的自组装
DOI: 10.1039/d2ce01029a
发表时间: 2022
期刊: CrystEngComm
影响因子: 3.1
作者: [Cairns K]
通讯作者: Cairns K
Heterocyclic nitrogen donor complexes of aluminium, gallium and indium with weakly coordinating triflate anions
铝、镓和铟与弱配位三氟甲磺酸根阴离子的杂环氮供体配合物
DOI: 10.1016/j.poly.2021.115367
发表时间: 2021
期刊: Polyhedron
影响因子: 2.6
作者: [Cairns K]
通讯作者: Cairns K
共 8 条
    Correlative Raman, SEM and EDX for operando electrochemistry research
    • 批准号:
      EP/V007629/1
    • 项目类别:
      Research Grant
    • 资助金额:
      $90.43万
    • 财政年份:
      2021
    • 负责人:
      Philip Bartlett
    • 依托单位:
    Complex Nanostructures by Supercritical Fluid Electrodeposition
    • 批准号:
      EP/I033394/1
    • 项目类别:
      Research Grant
    • 资助金额:
      $654.99万
    • 财政年份:
      2011
    • 负责人:
      Philip Bartlett
    • 依托单位:
    Plasmonic Interactions in Nano-Structured Voids
    • 批准号:
      EP/F05534X/1
    • 项目类别:
      Research Grant
    • 资助金额:
      $38.08万
    • 财政年份:
      2009
    • 负责人:
      Philip Bartlett
    • 依托单位:
    Rapid DNA Fingerprinting
    • 批准号:
      EP/G006008/1
    • 项目类别:
      Research Grant
    • 资助金额:
      $13.09万
    • 财政年份:
      2008
    • 负责人:
      Philip Bartlett
    • 依托单位:
    国内基金
    海外基金
    Capture and Release of Droplets Using Advanced Materials for High Technology Applications
    • 批准号:
      52073127
    • 项目类别:
      面上项目
    • 资助金额:
      58.0万元
    • 批准年份:
      2020
    • 负责人:
      Alidad Amirfazli
    • 依托单位:
    面向用户体验的IMT-Advanced系统跨层无线资源分配技术研究
    • 批准号:
      61201232
    • 项目类别:
      青年科学基金项目
    • 资助金额:
      25.0万元
    • 批准年份:
      2012
    • 负责人:
      胡亚辉
    • 依托单位:
    LTE-Advanced中继网络关键技术研究
    • 批准号:
      61171096
    • 项目类别:
      面上项目
    • 资助金额:
      60.0万元
    • 批准年份:
      2011
    • 负责人:
      王献
    • 依托单位:
    IMT-Advanced协作中继网络中的网络编码研究
    • 批准号:
      61040005
    • 项目类别:
      专项基金项目
    • 资助金额:
      10.0万元
    • 批准年份:
      2010
    • 负责人:
      王静
    • 依托单位: