High performance III-V quantum dot photodetectors for low SWaP infrared devices

适用于低 SWaP 红外设备的高性能 III-V 量子点光电探测器

• 批准号: EP/R006172/1
• 负责人: Jiang Wu
• 金额: $ 12.76万
• 依托单位: University College London
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2017
• 资助国家: 英国
• 起止时间: 2017 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FR006172%2F1
• 关键词: performance; III; quantum; dot; photodetectors

Infrared radiation covers a wide electromagnetic spectrum from 0.78 to 1000 um. According to Planck's law, all objects radiate a large portion of infrared radiation at reasonable temperatures, e.g. <6000 K (the surface temperature of the Sun). As a result, infrared photonic systems can be applied to many fields, such as free-space communication, remote sensing, surveillance, spectroscopy, and hazard detection. Many of these applications require both high performance and high operating temperature. The focus of this project is on achieving high performance III-V quantum dot infrared photodetectors for low size, weight, and power (SWaP) devices. High operating temperature (HOT) III-V photodetectors with high quantum efficiency are technically important because the use of mature III-V semiconductors can significantly reduce the fabrication and material cost. More importantly, HOT photodetectors reduce the cooling requirements so that infrared systems can be low SWaP. Despite tremendous progress made in the last two decades, the demand for SWaP infrared photodetectors (particularly for wavelengths >2 micron) becomes increasingly urgent and yet to be met due to intrinsic drawbacks of existing technologies. This work proposes to exploit III-V quantum dot infrared photodetectors for high performance HOT photodetectors. By utilizing new designs and quantum structures, it is possible to improve the quantum efficiency and reduce the dark current, which provide a means of approaching the fundamental detectivity limit. Given that quantum dots are insensitive to defects, the potential of combining silicon electronics and III-V infrared sensing technology also provide a unique opportunity towards mid-infrared Si photonics for sensing and free-space communication, which leverages the near-infrared Si photonics developed for optical integrated circuits and data communication.

红外辐射覆盖了从0.78到1000微米的宽电磁频谱。根据普朗克定律，所有物体在合理温度下都会辐射出很大一部分红外辐射，例如<6000 K（太阳表面温度）。因此，红外光子系统可以应用于许多领域，如自由空间通信，遥感，监视，光谱学和危害检测。许多这些应用需要高性能和高工作温度。该项目的重点是实现高性能III-V量子点红外探测器，用于低尺寸，重量和功率（SWaP）设备。具有高量子效率的高温III-V光电探测器具有重要的技术意义，因为使用成熟的III-V半导体可以显著降低制造成本和材料成本。更重要的是，热光电探测器降低了冷却要求，使红外系统可以低SWaP。尽管在过去的二十年中取得了巨大的进步，但由于现有技术的内在缺陷，对SWaP红外光电探测器（特别是波长bbb20微米）的需求变得越来越迫切，而且尚未得到满足。本工作提出利用III-V量子点红外探测器作为高性能热探测器。通过利用新的设计和量子结构，可以提高量子效率并减少暗电流，从而提供接近基本探测极限的方法。鉴于量子点对缺陷不敏感，结合硅电子和III-V红外传感技术的潜力也为用于传感和自由空间通信的中红外硅光子学提供了独特的机会，它利用了用于光学集成电路和数据通信的近红外硅光子学。

项目成果

Demonstration of Si based InAs/GaSb type-II superlattice p-i-n photodetector

• DOI: 10.1016/j.infrared.2019.06.011
• 发表时间: 2019-09-01
• 期刊: INFRARED PHYSICS & TECHNOLOGY
• 影响因子: 3.3
• 作者: Deng, Zhuo;Guo, Daqian;Chen, Baile
• 通讯作者: Chen, Baile

Sub-monolayer quantum dot quantum cascade mid-infrared photodetector

• DOI: 10.1063/1.5011239
• 发表时间: 2017-12-18
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Huang, Jian;Guo, Daqian;Chen, Baile
• 通讯作者: Chen, Baile

Mid-wave InAs/GaSb Superlattice PiBN Infrared Photodetector Grown on GaAs Substrate

GaAs 衬底上生长的中波 InAs/GaSb 超晶格 PiBN 红外光电探测器

• DOI: 10.1109/acp.2018.8595800
• 发表时间: 2018
• 作者: Huang J

Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate

• DOI: 10.1109/jlt.2018.2811388
• 发表时间: 2018-07-01
• 期刊: JOURNAL OF LIGHTWAVE TECHNOLOGY
• 影响因子: 4.7
• 作者: Chen, Wei;Deng, Zhuo;Chen, Baile
• 通讯作者: Chen, Baile

Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate

• DOI: 10.1016/j.infrared.2018.03.004
• 发表时间: 2018-05
• 期刊: Infrared Physics & Technology
• 影响因子: 3.3
• 作者: Zhuo Deng;Baile Chen;Xiren Chen;J. Shao;Q. Gong;Huiyun Liu;Jiang Wu