SILICON DRIFT CHAMBER DETECTOR DEVELOPMENT FOR XAS DATA COLLECTION

这个项目由NIH直接资助给 Photon Imaging，Inc.是开发和利用先进的阵列 用于SSRL的XAS实验的探测器。 它是基于发展 新型硅漂移室探测器元件，其性能 预计将在极高的能量分辨率 固态探测器的计数器。 设计、制造和 年，对原型探测器元件进行了积极的测试。 1998. 使用大面积探测器获得了显著的结果，8 或直径为12 mm、厚度为0.35 mm的六边形，带有外部FET 和低噪声电荷敏感前置放大器。 探测器性能 使用Peltier冷却在-75至+25 ℃的范围内测量， 从0.125到6.5秒的放大器整形时间。 测量的能量 对于0.5和1cm 2探测器，分辨率为159和263 eV FWHM， 分别在5.9keV，-75 ℃，6.5sec成形时间下进行。 为 较小的探测器元件，获得263 eV的能量分辨率 成形时间为0.125 5秒，与 最先进的Si[Li]或Ge低温固态探测器。

This project, funded by the NIH directly to the scientists at Photon Imaging, Inc., is to develop and utilize advanced array detectors for XAS experiments at SSRL. It is based on the development of new silicon drift chamber detector elements, whose performance is projected to be of excellent energy resolution at extremely high countrates for solid state detectors. The design, fabrication and testing of prototype detector elements was aggressively pursued in 1998. Significant results were obtained using large area detectors, 8 or 12 mm diameter hexagons of 0.35 mm thickness, with an external FET and low-noise charge sensitive preamplifiers. Detector performance was measured in the range of -75 to +25 0C using Peltier cooling and from 0.125 to 6 5sec amplifier shaping times. The measured energy resolutions were 159 and 263 eV FWHM for the 0.5 and 1 cm2 detectors, respectively (at 5.9 keV, -75 0C, 6 5sec shaping time). For the smaller detector elements, an energy resolution of 263 eV was obtained with the 0.125 5sec shaping time, which compares favorably with state-of-the art Si[Li] or Ge cryogenic solid state detectors.