SILICON DRIFT CHAMBER DETECTOR DEVELOPMENT FOR XAS DATA COLLECTION

用于 XAS 数据收集的硅漂移室探测器开发

• 批准号: 6119343
• 负责人: KEITH O HODGSON
• 金额: --
• 依托单位: STANFORD UNIVERSITY
• 依托单位国家: 美国
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-03-01 至 2000-04-14
• 项目状态: 已结题
• 来源: https://reporter.nih.gov/project-details/6119343
• 关键词: bioimaging /biomedical imaging; spectrometry; technology /technique

This project, funded by the NIH directly to the scientists at Photon Imaging, Inc., is to develop and utilize advanced array detectors for XAS experiments at SSRL. It is based on the development of new silicon drift chamber detector elements, whose performance is projected to be of excellent energy resolution at extremely high countrates for solid state detectors. The design, fabrication and testing of prototype detector elements was aggressively pursued in 1998. Significant results were obtained using large area detectors, 8 or 12 mm diameter hexagons of 0.35 mm thickness, with an external FET and low-noise charge sensitive preamplifiers. Detector performance was measured in the range of -75 to +25 0C using Peltier cooling and from 0.125 to 6 5sec amplifier shaping times. The measured energy resolutions were 159 and 263 eV FWHM for the 0.5 and 1 cm2 detectors, respectively (at 5.9 keV, -75 0C, 6 5sec shaping time). For the smaller detector elements, an energy resolution of 263 eV was obtained with the 0.125 5sec shaping time, which compares favorably with state-of-the art Si[Li] or Ge cryogenic solid state detectors.

该项目由美国国立卫生研究院直接资助给位于 光子成像公司将开发和利用先进的阵列 用于SSRL XAS实验的探测器。它是基于发展的 新的硅漂移室探测器元件，其性能是 预计在极高的分辨率下具有极好的能量分辨率 用于固态探测器的国家。设计、制造和制造 在#年积极地进行了原型探测器元件的测试 1998年。使用大面积探测器获得了显著的结果，8 或0.35 mm厚的直径12 mm的六边形，带有外部FET 和低噪声电荷灵敏前置放大器。探测器性能 在-75到+250摄氏度的范围内使用Peltier冷却和 放大器整形时间从0.125秒到6.5秒。测量到的能量 0.5和1 cm2探测器的分辨率分别为159和263 eV半高宽， (5.9keV，-750C，整形时间6.5秒)。对于 较小的探测器元件，获得263 eV的能量分辨率 整形时间为0.125 5秒，这与 最先进的Si[Li]或Ge低温固态探测器。