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Development of radiation hard Silicon Carbide (SiC) neutron detectors - CASE award with AWE

Development of radiation hard Silicon Carbide (SiC) neutron detectors - CASE award with AWE
开发抗辐射碳化硅 (SiC) 中子探测器 - 荣获 AWE 颁发的 CASE 奖
批准号:
ST/H003959/1
负责人:
金额:
$9.59万
依托单位:
依托单位国家:
英国
项目类别:
Training Grant
财政年份:
2010
资助国家:
英国
项目状态:
已结题
起止时间:
2010 至 --

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英文摘要
The aim of the project is to develop a new generation of radiation hard fast neutron detectors using SiC, and to assess their performance as a gamma-blind fast neutron detector in high flux photonuclear reactions. This work is collaboration with the Threat Reduction Department at AWE, and aims to transfer a new detector technology from the University which is optimsed for use in their photonuclear material interrogation programmes. The projecrt benefits from the existing STFC funded detector R&D at Surrey for radiation hard heavy ion detectors (eg. diamond) for nuclear physics experiments at GSI. Photonuclear material interrogation is a promising method for future threat reduction programmes. Here we propose to develop a new fast neutron detector based on the compound semiconductor SiC. The unique properties of SiC combine room temperature operation, extreme radiation hardness, high neutron sensitivity, and gamma-blind performance. It is therefore ideal for neutron detection in high-flux mixed n/gamma fields. In 2008 a break through in SiC material quality from Cree Inc has now made available free-standing wafers of electronic grade SiC, of the quality required for radiation detectors. We propose to fabricate prototype SiC detectors at Surrey's detector laboratories, and then test their performance at AWE and NRL test facilities. Various active interrogation methods for threat reduction and SNM detection are currently being developed, including nuclear resonance fluorescence and active neutron interrogation. In such cases, the ability to accurately measure the neutron fluence emitted from a test object is crucial, often in the presence of a strong mixed neutron-gamma field. In particular, the use of a pulsed neutron beam to create prompt neutron activation (PNA) is a promising technique for the interrogation of shielded SNM. In this technique, short neutron bursts of duration 100-200 us are used to generate fast fission neutrons from the interrogated material. The presence of lead, cadmium or hydrogenous shielding materials around the SNM produced short decay times for the emitted neutrons, due to their thermalisation and capture. Therefore the success of the PNA technique requires use of neutron detectors that have a rapid response and are sensitive during the period immediately after each incident neutron burst. Prototype SiC detectors have recently been demonstrated as a compact semiconductor-based fast neutron detector. In general, semiconductor-based neutron detectors should fullfill the following criteria: - High sensitivity to fast neutrons, with gamma-blind selectivity to reject photon events. - Compact detectors capable of operating at room temperature, with the potential to scale-up to large active areas. - Radiation hard detectors which are capable of withstanding significant neutron/gamma dose. SiC offer particular advantages over silicon detectors, principally in its superior radiation hardness, and its ability to operate in extreme environments at eleavated temperatures. Direct funding from AWE's (value ~£30k) has been approved to support the CASE partner activities within this project. This money will cover the additional CASE student stipend plus plus the provision of consumables for the project (mainly purchase of SiC wafers). The student will spend approximately 1 week per month at AWE, and will establish a collaborative partnership between the Threat Reduction group at AWE and the Detector Physics group at Surrey.
期刊论文(4)
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科研奖励(0)
会议论文
DOI: 10.1109/tns.2013.2243753
发表时间: 2013
期刊: IEEE Transactions on Nuclear Science
影响因子: 1.8
作者: [Bryant P]
通讯作者: Bryant P
DOI: 10.1088/1361-6501/aa7f8b
发表时间: 2017-10-01
期刊: MEASUREMENT SCIENCE AND TECHNOLOGY
影响因子: 2.4
作者: [Hodgson, M., Lohstroh, A., Thomas, D.]
通讯作者: Thomas, D.
DOI: 10.1016/j.nima.2016.11.006
发表时间: 2017-03
期刊: Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
影响因子: 1.4
作者: [M. Hodgson;A. Lohstroh;P. Sellin;D. Thomas]
通讯作者: M. Hodgson;A. Lohstroh;P. Sellin;D. Thomas
Alpha radiation induced space charge stability effects in semi-insulating silicon carbide semiconductors compared to diamond
与金刚石相比,半绝缘碳化硅半导体中的α辐射引起的空间电荷稳定性效应
DOI: 10.1016/j.diamond.2017.07.010
发表时间: 2017
期刊: Diamond and Related Materials
影响因子: 4.1
作者: [Hodgson M]
通讯作者: Hodgson M
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