III-V on Silicon Devices and Systems for Next Generation Optical Interconnects

用于下一代光互连的 III-V 硅器件和系统

• 批准号: 2268875
• 金额: --
• 依托单位: CARDIFF UNIVERSITY
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2019
• 资助国家: 英国
• 起止时间: 2019 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2268875
• 关键词: III; Silicon; Devices; Systems; Next

The fast maturing field of Silicon Photonics is already being transferred to Industry as seen by the main technological companies: E.g. Intel, IBM, Hewlett Packard, Cisco, Nvidia, etc. The main application is optical interconnects for datacom/telecom applications. To further disrupt the technology, it is an actual need to integrate active devices on the silicon platform with better manufacturability and scalability. The main candidate to solve it is the direct epitaxial integration of III-V materials on Si. The active devices normally epitaxially grown on Si use quantum wells. Nevertheless, the crystalline defects of the epitaxy limits its performance and lifetime. Due to its defects, temperature and radiation hardness, quantum dots are the main candidate to further improve performance and lifetimes towards a better scalability and manufacturability standard.The goal of this PhD is to invent and develop the proof-of-concept of quantum dot devices in order to overcome the traditional challenges of epitaxial growth of III-V over Si. The PhD will work on the framework of the Compound Semiconductor Manufacturing Hub (www.compoundsemiconductorhub.org), which relates 35 industrial partners and 4 universities, with the objective of developing compound semiconductor research from materials to systems. Among them, Oclaro, Kaiam, Microsemi, IQE and Newport Wafer Fab are of relevant interest. At Cardiff, it is possible to do the complete proof-of-concept cycle from wafer growth until packaging of optoelectronic devices.The Institute for Compound Semiconductors and Cardiff University has long tradition on developing III-V quantum dot lasers over Si from wafer growth until the final characterization. The objective of the PhD is to complement the laser with further quantum dot active devices based on compound semiconductors to deposit over Si.

硅光子学这个快速成熟的领域已经被主要的科技公司所看到，如英特尔、IBM、惠普、思科、英伟达等。主要应用是数据通信/电信应用的光互连。为了进一步颠覆该技术，实际需要将有源器件集成到具有更好可制造性和可扩展性的硅平台上。解决这个问题的主要候选是III-V材料在Si上的直接外延集成。通常在硅上外延生长的有源器件使用量子阱。然而，外延的晶体缺陷限制了其性能和寿命。由于其缺陷、温度和辐射硬度，量子点是进一步提高性能和寿命以达到更好的可扩展性和可制造性标准的主要候选者。本博士的目标是发明和开发量子点器件的概念验证，以克服III-V在Si上外延生长的传统挑战。博士将在化合物半导体制造中心（www.compoundsemiconductorhub.org）的框架下工作，该中心涉及35个工业合作伙伴和4所大学，目标是发展从材料到系统的化合物半导体研究。其中，Oclaro, Kaiam, Microsemi， IQE和Newport Wafer Fab是相关兴趣。在卡迪夫，有可能完成从晶圆生长到光电器件封装的完整概念验证周期。从晶圆生长到最终表征，化合物半导体研究所和卡迪夫大学在硅上开发III-V量子点激光器方面有着悠久的传统。博士的目标是用基于化合物半导体的量子点有源器件来补充激光，以沉积在硅上。