III-V on Silicon Devices and Systems for Next Generation Optical Interconnects

正如主要技术公司所看到的那样，硅光子学的快速成熟领域已经转移到工业领域：例如Intel，IBM，Hewlett Packard，Cisco，Nvidia等。主要应用是电信/电信应用的光学互连。为了进一步颠覆这项技术，实际上需要在硅平台上集成有源器件，使其具有更好的可制造性和可扩展性。解决这一问题的主要途径是在Si上直接外延集成III-V族材料。通常在Si上外延生长的有源器件使用量子威尔斯。然而，外延的晶体缺陷限制了其性能和寿命。由于其缺陷，温度和辐射硬度，量子点是进一步提高性能和寿命的主要候选人，朝着更好的可扩展性和可制造性标准。本博士的目标是发明和开发量子点器件的概念验证，以克服在Si上外延生长III-V族的传统挑战。博士将致力于化合物半导体制造中心（www.compoundsemiconductorhub.org）的框架，该中心涉及35个工业合作伙伴和4所大学，目标是从材料到系统开发化合物半导体研究。其中，Oclaro、Kaiam、Microsemi、IQE和纽波特晶圆厂是相关的兴趣。在卡迪夫，可以完成从晶圆生长到光电器件封装的完整概念验证周期。化合物半导体研究所和卡迪夫大学在硅上开发III-V量子点激光器方面有着悠久的传统，从晶圆生长到最终表征。博士的目标是补充激光与进一步的量子点有源器件的基础上化合物半导体存款在硅。

The fast maturing field of Silicon Photonics is already being transferred to Industry as seen by the main technological companies: E.g. Intel, IBM, Hewlett Packard, Cisco, Nvidia, etc. The main application is optical interconnects for datacom/telecom applications. To further disrupt the technology, it is an actual need to integrate active devices on the silicon platform with better manufacturability and scalability. The main candidate to solve it is the direct epitaxial integration of III-V materials on Si. The active devices normally epitaxially grown on Si use quantum wells. Nevertheless, the crystalline defects of the epitaxy limits its performance and lifetime. Due to its defects, temperature and radiation hardness, quantum dots are the main candidate to further improve performance and lifetimes towards a better scalability and manufacturability standard.The goal of this PhD is to invent and develop the proof-of-concept of quantum dot devices in order to overcome the traditional challenges of epitaxial growth of III-V over Si. The PhD will work on the framework of the Compound Semiconductor Manufacturing Hub (www.compoundsemiconductorhub.org), which relates 35 industrial partners and 4 universities, with the objective of developing compound semiconductor research from materials to systems. Among them, Oclaro, Kaiam, Microsemi, IQE and Newport Wafer Fab are of relevant interest. At Cardiff, it is possible to do the complete proof-of-concept cycle from wafer growth until packaging of optoelectronic devices.The Institute for Compound Semiconductors and Cardiff University has long tradition on developing III-V quantum dot lasers over Si from wafer growth until the final characterization. The objective of the PhD is to complement the laser with further quantum dot active devices based on compound semiconductors to deposit over Si.